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In this work, we have studied the spin dynamics of a synthetic antiferromagnet (AFM)/heavy metal/ferromagnet double barrier magnetic tunnel junction in the presence of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction, interfacial Dzyaloshinskii–Moriya (iDM) interaction, Néel field, and Spin–Orbit Coupling (SOC) with different Spin-Transfer Torque (STT). We employ the Landau–Lifshitz–Gilbert–Slonczewski equation to investigate the AFM dynamics of the proposed system. We found that the system exhibits a transition from regular to damped oscillations with the increase in strength of STT for systems with a weaker strength of iDM interaction than RKKY interaction while displaying sustained oscillations for systems having the same order of RKKY and iDM interactions. On the other hand, the systems with sufficiently strong iDM interaction strength exhibit self-similar but aperiodic patterns in the absence of the Néel field. In the presence of the Néel field, the RKKY interaction dominating systems exhibit chaotic oscillations for low STT but display sustained oscillations under moderate STT. Our results suggest that the decay time of oscillations can be controlled via SOC. The system can work as an oscillator for low SOC but displays non-linear characteristics with the rise in SOC for systems having weaker iDM interaction than RKKY interactions. In contrast, opposite characteristics are noticed for iDM interaction dominating systems. We found periodic oscillations under low external magnetic fields in RKKY interaction dominating systems. However, moderate fields are necessary for sustained oscillation in iDM interaction dominating systems. Moreover, the system exhibits saddle-node bifurcations and chaos under moderate Néel field and SOC with suitable RKKY and iDM interactions. In addition, our results indicate that the magnon lifetime can be enhanced by increasing the strength of iDM interaction for both optical and acoustic modes. [ABSTRACT FROM AUTHOR]

This article analytically explores defect assisted spin injection in organic magnetic tunnel junctions (MTJs) [x/rubrene/Co, x = La 2 O 3 , LaMnO 3 , La 0.7 Ca 0.3 MnO 3 (LCMO), La 0.7 Sr 0.3 MnO 3 (LSMO)] employing nonequilibrium Green's function (NEGF). Spin precession at ferromagnet (FM)/organic semiconductor (OSC) interface defect states have been considered while modeling the MTJ devices. Variations in voltage dependent parallel (R P) and antiparallel (R A P ) resistances have been attributed to modified spin dependent scattering at modified spin resolved density of states of magnetic electrodes. Moreover, change in distribution of defect state depths at a spin injection interface has also been observed to modify R P /R A P , and hence, tunnel magnetoresistance (TMR) across the devices. Localization of defect state distribution due to a high spin split band may have resulted in large TMR for La 2 O 3 devices. Nonlinear spin transfer torque (STT) in devices other than LSMO indicates compensation of spin damping, resulting in a high TMR response across the devices. Hence, the localization of defect state distribution and the choice of magnetic electrodes with high spin split bands may be exercised to realize spintronic devices for low power spin memory applications. [ABSTRACT FROM AUTHOR]

The urgent demand for high-performance emerging memory, propelled by artificial intelligence in internet of things (AIoT) and machine learning advancements, spotlights spin-transfer torque magnetic random-access memory as a prime candidate for practical application. However, magnetic tunnel junctions (MTJs) with a single-crystalline MgO barrier, which are central to magnetic random-access memory (MRAM), suffer from significant drawbacks: insufficient endurance due to breakdown and high writing power requirements. A superlattice barrier-based MTJ (SL-MTJ) is proposed to overcome the limitation. We first fabricated the MTJ using an SL barrier while examining the magnetoresistance and resistance-area product. Lower writing power can be achieved in SL-MTJs compared to MgO-MTJs. Our study may provide a new route to the development of MRAM technologies. [ABSTRACT FROM AUTHOR]

In this paper, we propose a new approach for constructing broadband rectifiers from resonant-type in-plane spin-torque diodes (STDs). The intrinsic bandwidth of such STDs constrained by the ferromagnetic resonance linewidth of the corresponding magnetic tunnel junction's is relatively narrow, which is a significant limitation. To address this issue, we propose the implementation of an array of these STDs, each with a distinct resonance frequency. By ensuring that the frequency difference between adjacent STDs is smaller than their individual bandwidths, we achieve a device capable of rectifying signals over a much wider frequency range. To verify the effectiveness of our approach, we have performed analytical calculations based on the Landau–Lifshitz–Gilbert equation with the Slonczewski term, complemented by macrospin modeling and full-scale micromagnetic simulations to account for thermal fluctuations and local magnetization inhomogeneities. Our results demonstrate that an STD array can effectively function as a broadband energy harvester, maintaining near-constant rectification efficiency across a broad frequency range. This research establishes the groundwork for the development of broadband energy harvesters based on STD arrays, with potential applications in various fields requiring efficient energy conversion across a wide frequency spectrum. [ABSTRACT FROM AUTHOR]

In magnetic tunnel junctions (MTJs), an antiferromagnetic iridium manganese (IrMn) layer neighboring a ferromagnetic electrode is indispensable for pinning the magnetization of the ferromagnet. The effect of its antiferromagnetism on adjacent ferromagnet and, thus, the quantum transport is, nevertheless, scarcely studied. Here, we investigate the role of antiferromagnetically orientated Mn spins in IrMn on the spin-dependent tunneling transport in IrMn/FeCo/MgO/FeCo/IrMn MTJ by analyzing the tunneling magnetoresistance (TMR) effect. The opposite spin orientation of Mn induces the mixing of Bloch symmetries, Δ 1 and Δ 5 , irrespective of the spin alignment of the FeCo electrode. This auxiliary contribution from the Mn spins improves the tunneling in majority- and minority-spin channels in parallel configuration. In the antiparallel configuration, the tunneling in majority- and minority-spin channels is non-identical. The TMR as high as 8643% is obtained under equilibrium. In addition, the non-equilibrium behavior of TMR and the spin-filtering effect are examined in the voltage bias range of 10–50 mV. The TMR ratio of 3600% with the spin-filtering efficiency of ∼ 98% is maintained at 50 mV, presenting the MTJ as an effective spin-filtering device robust to the bias endurance. Finally, it is speculated that our device structure can be a potential spin–orbit torque-based MTJ that offers a giant TMR and promotes upscaling of the generation of multi-bit devices with a simplified design strategy. [ABSTRACT FROM AUTHOR]

While magnetoresistive random-access memory (MRAM) stands out as a leading candidate for embedded nonvolatile memory and last-level cache applications, its endurance is compromised by substantial self-heating due to the high programming current density. The effect of self-heating on the endurance of the magnetic tunnel junction (MTJ) has primarily been studied in spin-transfer torque (STT)-MRAM. Here, we analyze the transient temperature response of two-terminal spin–orbit torque (SOT)-MRAM with a 1 ns switching current pulse using electro-thermal simulations. We estimate a peak temperature range of 350–450 °C in 40 nm diameter MTJs, underscoring the critical need for thermal management to improve endurance. We suggest several thermal engineering strategies to reduce the peak temperature by up to 120 °C in such devices, which could improve their endurance by at least a factor of 1000× at 0.75 V operating voltage. These results suggest that two-terminal SOT-MRAM could significantly outperform conventional STT-MRAM in terms of endurance, substantially benefiting from thermal engineering. These insights are pivotal for thermal optimization strategies in the development of MRAM technologies. [ABSTRACT FROM AUTHOR]

Writing and reading of magnetization states via mechanical strain are crucial for the development of ultralow-power spintronic devices. In this study, a van der Waals magnetic tunnel junction (vdW MTJ) of Fe3GaTe2/h-BN/MnBi2Te4 is constructed to explore the magnetization reversal under in-plane biaxial strains. Interestingly, the interlayer magnetic coupling of devices can be tuned to ferromagnetic and antiferromagnetic states by tensile and compressive strains, respectively. The various magnetic couplings on applied strains are analyzed using the superexchange theory. Importantly, the interlayer coupling nearly vanishes after removing external strains, ensuring the nonvolatility of magnetization reversal, resulting in the nonvolatile writing of magnetization states in the present vdW MTJ. Moreover, the tunneling magnetoresistance ratio of the device is up to −5745%, which remains −1478% even with −2% strain, showing great potential for reading the magnetization states. Therefore, this work provides an alternate avenue to write and read magnetization states in one vdW MTJ under biaxial strains. [ABSTRACT FROM AUTHOR]

Atomic-scale spectroscopic imaging of sputtered magnetic tunnel junction structures with a thick oxygen-rich MgO barrier reveals the diffusion of iron and cobalt into the MgO barrier from CoFeB electrodes. First principles calculations are performed to (1) confirm that Fe diffusion through Mg vacancies is energetically favorable, (2) quantify the reduction of interfacial perpendicular magnetic anisotropy due to Fe diffusion into MgO, and (3) predict that the presence of Fe impurities in MgO causes an increased leakage and a tunneling magnetoresistance decrease. Through the chemical shift of the Fe L3 edge and the peak ratio Fe L3/Fe L2 measured by electron energy loss spectroscopy, we suggest that, within MgO, iron with mixed oxidation state Fe2+ and Fe3+ or higher is found in the as-grown structure, which is reduced by annealing to Fe2+. These results indicate that the stoichiometry of as-deposited MgO barrier layers plays an important role in controlling the microstructure and optimizing the performance of magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

In our previous work, we synthesized a metal/2D material heterointerface consisting of L 1 0 -ordered iron–palladium (FePd) and graphene (Gr) called FePd(001)/Gr. This system has been explored by both experimental measurements and theoretical calculations. In this study, we focus on a heterojunction composed of FePd and multilayer graphene referred to as FePd(001)/ m -Gr/FePd(001), where m represents the number of graphene layers. We perform first-principles calculations to predict their spin-dependent transport properties. The quantitative calculations of spin-resolved conductance and magnetoresistance (MR) ratio (150 %– 200 %) suggest that the proposed structure can function as a magnetic tunnel junction in spintronics applications. We also find that an increase in m not only reduces conductance but also changes transport properties from the tunneling behavior to the graphite π -band-like behavior. Additionally, we investigate the spin-transfer torque-induced magnetization switching behavior of our junction structures using micromagnetic simulations. Furthermore, we examine the impact of lateral displacements (sliding) at the interface and find that the spin transport properties remain robust despite these changes; this is the advantage of two-dimensional material hetero-interfaces over traditional insulating barrier layers such as MgO. [ABSTRACT FROM AUTHOR]

Heusler alloy-based magnetic tunnel junctions have the potential to provide high spin polarization, small damping, and fast switching. In this study, junctions with a ferromagnetic electrode of Co2FeAl were fabricated via room-temperature sputtering on Si/SiO2 substrates. The effect of boron doping on Co2FeAl magnetic tunnel junctions was investigated for different boron concentrations. The surface roughness determined by atomic force microscope, and the analysis of x-ray diffraction measurement on the Co2FeAl thin film reveals critical information about the interface. The Co2FeAl layer was deposited on the bottom and on the top of the insulating MgO layer as two different sample structures to compare the impact of the boron doping on different layers through tunneling magnetoresistance measurements. The doping of boron in Co2FeAl had a large positive impact on the structural and magneto-transport properties of the junctions, with reduced interfacial roughness and substantial improvement in tunneling magnetoresistance. In samples annealed at low temperature, a two-level magnetoresistance was also observed. This is believed to be related to the memristive effect of the tunnel barrier. The findings of this study have practical uses for the design and fabrication of magnetic tunnel junctions with improved magneto-transport properties. [ABSTRACT FROM AUTHOR]

Neuromorphic computing, inspired by biological nervous systems, is gaining traction due to its advantages in latency, energy efficiency, and algorithmic complexity compared to traditional artificial neural networks. This has spurred research into artificial synapses and neurons that replicate brain functions. Spintronic-based technologies, particularly domain walls (DWs) and skyrmions (SKs), have shown remarkable potential for brain-inspired computing, facilitating energy-efficient data storage and advancing beyond CMOS computing architectures. Researchers have proposed various DWs- and Sks-based neuromorphic architectures for neurons and synapses. Leveraging magnetic multilayer structures, we propose a magnetic soliton that incorporates both DWs- and Sks-based magnetic tunnel junction (MTJ) device structures to emulate leaky integrate-and-fire (LIF) characteristics. These characteristics are controlled by spin–orbit torque (SOT)-driven motion within ferromagnetic thin films. By strategically placing the reading block and utilizing a combination of SOT and varying demagnetization energy, we achieve modified LIF neuron characteristics in both DW and Sks MTJ devices. The co-action of soliton dynamics across the nanotrack during the application of the current pulse, along with edge repulsion and variations in demagnetization energy, exploits LIF spiking behavior. Theoretical and micromagnetic analyses reveal that the transitory tunable positions of Sks and the total magnetization of the free layer for DWs mimic the membrane potential of biological neurons. Initial studies on multilayer DW-based LIF characteristics showed promise; however, maintaining leaky behavior required a constant negative current, which is energy inefficient. By incorporating the non-volatile properties of skyrmions and adding a chiral Dzyaloshinskii–Moriya interaction term, we further explored LIF dynamics, yielding encouraging results. Our proposed neuron model, implemented in fully connected and convolutional layers, achieves over 95% classification accuracy on the MNIST and Fashion MNIST datasets using a modified spike-based backpropagation method. With nanosecond latency, these spiking neuron devices, when integrated with CMOS, pave the way for high-density, energy-efficient neuromorphic computing hardware. [ABSTRACT FROM AUTHOR]

Metallization, plasma, and thermal annealing used in magneto-resistive random access memory integration differs significantly from traditional interconnection processes, usually resulting in the device performance deterioration of metal-oxide-silicon field-effect transistors. Commonly used methods, such as hydrogen postalloying, may not be effective to recover performance when magneto-resistive random access memory is integrated. The study focused on the interplay between hydrogen content in the dielectric films, wafer configuration induced by film stress, and thermal annealing during the chip fabrication process. Post-thermal annealing can enhance the release of hydrogen from the dielectric films, which can repair the silicon–hydrogen bond breakage resulting from magneto-resistive random access memory integration. However, this process can also worsen wafer bowing in an undesired direction which is detrimental to the performance of metal-oxide-silicon field-effect transistors. Consequently, utilizing silicon nitride with specific hydrogen content, in conjunction with post-thermal annealing, can improve effectively both p-type and n-type metal-oxide-silicon field-effect transistors. This approach holds significant potential for application in more advanced technological nodes since it is compatible with traditional process and does not require more advanced fabrication equipment. Additionally, the resulting embedded magneto-resistive random access memory chips maintain competitive magnetic tunneling junction reliability in term of endurance and reflow resistivity. [ABSTRACT FROM AUTHOR]

Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of "FM/barrier/FM/barrier/FM" with double barriers, in contrast to the traditional single barrier structure "FM/barrier/FM." We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of "Fe/MgO/Fe" MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier "Fe/MgO/Fe" MTJ, the TMR ratio is obtained as 122%, while in the double barrier "Fe/MgO/Fe/MgO/Fe" MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions are particle-like topological protected spin structures that can be driven by electric current. We demonstrate a single skyrmion-based multilevel data storage device that could also work as the potential artificial synapse for neuromorphic computing. Four pinning sites are designed to situate the skyrmion in selective regions, whose resistances rise owing to the anisotropic magnetoresistance (AMR) induced by the skyrmion. Skyrmion's position could denote the data levels when the device works as a multilevel data storage device. Pinning sites' positions represent the synaptic weights when it functions as the artificial synapse. Multilevel data storage device's data level change or the synapse's potentiation and depression is realized by the electric current applied parallel to the track. Our work shows that the AMR could help to detect a single skyrmion without the magnetic tunnel junction. Moreover, the skyrmion manipulated by pinning provides an approach for precise control and helps realize skyrmion-based in-memory computing. [ABSTRACT FROM AUTHOR]

Field-free magnetization switching via the interplay of spin orbit torque (SOT), exchange bias field (H E X ), and voltage controlled magnetic anisotropy (VCMA) is crucial for the development of scalable, high speed, and energy-efficient spintronic memories. This has been experimentally demonstrated by the rapid evolution of the voltage gated-spin orbit torque-magnetic random access memory (VG-SOT-MRAM) cell, in which perpendicular spin current is fed along with the in-plane H E X and VCMA assistance for cell programming. Here, we have examined the writing properties of a three terminal voltage gated-spin orbit torque-perpendicularly magnetized magnetic tunnel junction (VG-SOT-pMTJ) device structure (IrMn/CoFeB/MgO/CoFeB) in-depth through simulation. We observed that SOT critical switching current (I _ S O T) decreases either by increasing the VCMA voltage or FL thickness. Even SOT field-like torque can accelerate the switching process and modulate the critical switching current. As the VCMA voltage rises, I _ S O T falls by nearly 60%. In our experimental setup, VCMA/SOT optimal pulse width and amplitude for better write delay are 1 ns and 0.3 V, respectively. Furthermore, the impacts of free layer thickness, pMTJ radius, H E X , and noise are analyzed. Finally, we demonstrate the dependency of material parameters on temperature and VCMA voltage. [ABSTRACT FROM AUTHOR]

We have developed and optimized two categories of spin-ransfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance ratio, low critical current, high outputpower in the micro-watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, two CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and two CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device's response to electronic and optical stimuli. [ABSTRACT FROM AUTHOR]

The use of femtosecond laser pulses for ultrafast triggering of magnetization switching is of great interest in multilayer systems with great tunability. At present, the impact of interfacial mixing on magnetization switching has not been thoroughly investigated. In this paper, the impact of interfacial mixing on magnetization dynamics in multilayer systems is investigated by a combination of atomic spin dynamics and two-temperature models. Our results show that interfacial mixing in multilayer systems not only reduces the energy density required for magnetization switching but also expands the range of pulse durations that can trigger magnetization switching. In addition, we have investigated the dependence of the switching time on the interfacial mixing in multilayer systems. The results show that interfacial mixing can accelerate the process of magnetization dynamics, thus providing a theoretical basis for the design of faster speed optically controlled magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

We report the structural feature of sputter-deposited epitaxial [Co (0.2 nm)/Pt (0.2–1.0 nm)] multilayered films prepared with various periodic structural designs consisting of non-integer numbers of Co and Pt monoatomic layers on an atomically flat Ru(0001). Sharp superlattice modulation peaks and their systematic changes with the Pt thicknesses were observed in the x-ray diffraction (XRD) spectrum. The formation of periodic structures shows that layer-by-layer like growth occurs and the resulting incommensurate superlattice modulation survives down to an atomic scale even in the sputter-deposited Co/Pt multilayers. Magnetic properties were also investigated for the Co/Pt multilayers. Interestingly, the maximum perpendicular magnetic anisotropy Ku of 3 × 106 erg/cm3 was obtained for the [Co (0.2 nm)/Pt (0.3 nm)] multilayer exhibiting incommensurate superlattice modulation peaks, while the [Co (0.2 nm)/Pt (0.2 nm)] multilayer with a L11-like XRD peak showed a smaller Ku. A cross-sectional high-angle annular dark-field scanning transmission electron microscopy analysis revealed that a partially L11-ordered CoPt structure is formed in the [Co 0.2 nm/Pt 0.2 nm] multilayer, interpreting the observed Ku. This study gives a new insight into the structural feature of sputter-deposited Co/Pt multilayers useful for a wide range of spintronic devices, such as magnetic tunnel junctions. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junction (MTJ)-based true random number generators (TRNG), which are promisingly utilized as hardware accelerators for probabilistic computing, may suffer intrinsic performance drifting and fluctuation in the probability space and performance variations in device arrays. In order to preventively avoid these concerns, it is necessary to develop strategies that can help MTJ-based TRNG to be self-stabilized and calibration-free. Here, we derived a simple and easily handleable strategy that only depends on the current sampled state of an MTJ device without any historical or statistic information or a pre-calibrated probabilistic switching property to dynamically tune its sampling probability for the next sampling operation. In this way, the long-term sampling probability of the MTJ can be proved to automatically converge into a desired probability with little fluctuation and drifting. We further experimentally demonstrate such a self-stabilized MTJ-based TRNG. Our results show that the TRNG can generate binary random numbers with any destined probability regardless of its initial state. Furthermore, the TRNG also displays the desired capability of excellently hedging against performance drifting and fluctuations. All these combined allow the self-stabilized TRNG without calibration to be more viable for high-quality entropy source applications. [ABSTRACT FROM AUTHOR]

We report systematic investigations of the effect of ultrathin capping layer insertion on the magnetic, magnetotransport, and voltage-controlled magnetic anisotropy (VCMA) properties in magnetic tunnel junctions (MTJs) with top free layer structure. Various kinds of ultrathin capping materials (Ir, Mo, TaB, Mg, Cr, Ti, and Ta) were introduced into the top free layer structure, which is comprised of MgO/CoFeB/X/MgO, where X is the inserted capping material. On insertion of an ultrathin Ir capping layer thinner than 0.3 nm, both the perpendicular magnetic anisotropy and the VCMA efficiency were improved by approximately a factor of two compared to the case without inserting an ultrathin metal capping layer. Mo insertion was also seen to be effective in improving the annealing tolerance. The developed structure can provide a novel approach for the development of high-performance voltage-driven MTJs, which can be applied, for example, for voltage-controlled magnetoresistive random access memory. [ABSTRACT FROM AUTHOR]

We present a spintronic device based hardware implementation of UNet for segmentation tasks. Our approach involves designing hardware for convolution, deconvolution, rectified activation function (ReLU), and max pooling layers of the UNet architecture. We designed the convolution and deconvolution layers of the network using the synaptic behavior of the domain wall MTJ. We also construct the ReLU and max pooling functions of the network utilizing the spin hall driven orthogonal current injected MTJ. To incorporate the diverse physics of spin-transport, magnetization dynamics, and CMOS elements in our UNet design, we employ a hybrid simulation setup that couples micromagnetic simulation, non-equilibrium Green's function, and SPICE simulation along with network implementation. We evaluate our UNet design on the CamVid dataset and achieve segmentation accuracies of 83.71% on test data, on par with the software implementation with 821 mJ of energy consumption for on-chip training over 150 epochs. We further demonstrate nearly one order of magnitude (10×) improvement in the energy requirement of the network using unstable ferromagnet (Δ = 4.58) over the stable ferromagnet (Δ = 45) based ReLU and max pooling functions while maintaining similar accuracy. The hybrid architecture comprising domain wall MTJ and unstable FM-based MTJ leads to an on-chip energy consumption of 85.79 mJ during training, with a testing energy cost of 1.55 µJ. [ABSTRACT FROM AUTHOR]

This work investigates the interplay between interfacial spin–orbit coupling (SOC) and magnon excitation-induced spin memory loss in epitaxial L10-FePt/MgO/L10-FePt magnetic tunnel junctions, which is crucial for advancing spintronic technologies. By employing systematic temperature-dependent transport measurements and inelastic electron tunneling spectroscopy, our study reveals that interfacial SOC at the Pt-terminated FePt/MgO interface significantly enhances magnon excitation during electron tunneling. This process results in a pronounced loss of spin memory in the spin-polarized current, diminishing the tunnel magnetoresistance ratio. Our findings provide critical insights into the mechanisms of spin memory loss, offering directions for optimizing spintronic device performance in the context of pronounced SOC environments. [ABSTRACT FROM AUTHOR]

An alternative way of skyrmion quasi-particle detection is simulated at low voltage bias. The point contact (PC), attached to the strip with a Néel-type skyrmion, can detect it with a higher efficiency than a magnetic tunnel junction. The method is based on detecting the skyrmion via the ballistic magnetoresistance ratio (BRR). PC's resistance with skyrmion significantly differs from the one without it. BRR is estimated in the framework of the point contact model for two directions of spin-polarized current: perpendicular to the transport direction (case 1) and along one (case 2). Skyrmion's size is assumed to be around 3.6 nm in diameter—smaller, or comparable, to the mean free path of electrons, allowing it to utilize the ballistic transport approach. As a result, resistance values for the considered Néel type skyrmion within the related size are estimated as 157 Ω for case 1 and 452.2 Ω for case 2 with optimistic BRR 101.3% and 291.7%, respectively. BRR for case 2 is higher due to the spin-filtering effect. The method also has the potential to detect the skyrmion type, or other magnetic nano structures such as bimeron, domain wall (DW), etc. [ABSTRACT FROM AUTHOR]

This work shows how the tunnel-effect based magnetoresistance (TMR) technology can be used as a competitive sensing method in electrical current and power processors. The sensor is arranged in a Wheatstone bridge topology, and each magnetoresistance was composed of a series connection of 360 magnetic tunnel junction elements with the following structure (thickness in nm): 100 SiO2/5 Ta/15 Ru/5 Ta/15 Ru/5 Ta/5 Ru/20 IrMn/2 CoFe30/0.85 Ru/2.6 CoFe40B20/1.2 MgO/2 CoFe40B20/0.21 Ta/4 NiFe/0.20 Ru/6 IrMn/2 Ru/5 Ta/10 Ru. First, the electrical and thermal characteristics of the sensor were evaluated by analyzing its response to DC current sweeps at various temperatures, controlled using a climatic chamber. Nominal values of current sensitivity S (0.324 mV/A), bridge output offset voltage Vo,s,o (−37.1 mV), bridge input resistance Rinp,bridge (0.958 kΩ), and their thermal behavior were obtained (0.0036 mV/A°C, 0.079 mV/°C, and −0.31 Ω/°C). Second, an instrumentation system is introduced to characterize the sensor, measuring its sensitivity to AC line currents from the mains up to 10 Arms. Finally, an electronic wattmeter was developed showing the relevant quantities of its design. The circuit is able to interface a TMR Wheatstone bridge to an analog processor. Power and current measurements were obtained from a 150 Vrms AC mains 1.5 kW load with resistive and capacitive components, achieving less than 1% deviation over the expected values. The circuit shown can be used to interface these signals to more complex smart digital engines with active or reactive energy processing capabilities, while providing inherent high voltage isolation, thanks to its TMR measurement technology. [ABSTRACT FROM AUTHOR]

Magnetic Josephson junctions (MJJs) are a special class of hybrid systems where antagonistic correlations coexist, thus providing a key for advances in weak superconductivity, superconducting spintronics, and quantum computation. So far, the memory properties of MJJs have been mostly investigated in view of digital electronics and for spintronic devices at liquid-helium temperature. At the operating temperature of quantum circuits, a magnetic order can rise in a superconductor (S) at the S/ferromagnet (F) interface, i.e., the inverse proximity effect (IPE), thus leading to a significant modification of the magnetic field patterns in MJJs. In this work, we have carried out a comparative investigation of the magnetic behavior of tunnel MJJs with a strong ferromagnetic layer inserted in the layout of both Nb and Al JJs, respectively. The comparative analysis validates the crucial role of the temperature, the fundamental scaling energies of S/F coupling systems, and the transparency of the S/F interface. This investigation points out that the IPE is a key aspect to consider when designing tunnel MJJs operating well below 4 K and thus in the perspective of hybrid superconducting quantum architectures. [ABSTRACT FROM AUTHOR]

Current-induced spin–orbit torque (SOT) facilitates the ultrafast electrical manipulation of magnetic tunnel junction (MTJ), which is a leading non-volatile technology for the microelectronic industry. The key bottleneck to the commercial application of SOT-MTJ is the absence of a practicable symmetry-breaking scheme to switch perpendicular magnetization without an external magnetic field. Here, we demonstrate the wafer-scale realization of internalized field-free switching in perpendicular SOT-MTJ using conventional materials and device structure. We utilize a dual-function tungsten (W) spacer, which generates sizable SOT while concomitantly breaking symmetry via interlayer exchange coupling (IEC). Tuning the W thickness enables field-free switching with two types of IEC. An optimized combination of SOT and IEC ensures competitive switching performance, with our device exhibiting excellent thermal stability, low switching current density, and fast operating speed. This work builds the long-sought bridge between SOT manipulation of magnetization and wafer-scale field-free perpendicular MTJ. It underscores the urgent need to incorporate perpendicular SOT-MTJ in integrated circuits for applications in logic, memory, and unconventional computing. [ABSTRACT FROM AUTHOR]

The article discusses the growth and advancements in the field of spin-related quantum materials and devices, driven by scientific discoveries and engineering innovations. Spintronics has revolutionized data storage, processing speed, and energy efficiency, with developments in giant magnetoresistance, spin valves, and magnetic tunnel junctions playing a key role. Recent focus has shifted to quantum materials, spin-orbit coupling, and topological effects, showcasing the potential of spin-based technologies in modern electronics. The Special Topic collection highlights key challenges and breakthroughs in electric field control, emergent spin phenomena, and device-level implementations, emphasizing the transformative impact of spin-related quantum technologies on energy-efficient and high-performance devices. [Extracted from the article]

A giant magnetoresistance (GMR) sensor with a Wheatstone bridge structure and an out-of-plane linear response was developed. The spin-valve structure consists of a synthetic antiferromagnetic [(Co/Pt)n/Ru/(Pt/Co)n] reference layer with perpendicular magnetic anisotropy, a Cu spacer layer, and a Co-free layer with in-plane easy magnetization. By utilizing the spin–orbit torque induced magnetization switching in the synthetic antiferromagnetic layer, the magnetization of the reference layers in the adjacent bridge arms is set to the opposite direction, achieving a GMR sensor with a full Wheatstone bridge structure. The sensor exhibits linear response to the out-of-plane magnetic field with adjustable dynamic ranges from hundreds to thousands of Oe, depending on the thickness of the Co-free layer. A similar Wheatstone bridge sensor consisting of magnetic tunnel junctions was also proposed. The sensor with out-of-plane linear response may have promising applications in three-dimensional magnetic field detection and current sensing field. [ABSTRACT FROM AUTHOR]

This work explores the atomic-scale nature of defects within hafnium dioxide/silicon dioxide/silicon (HfO2/SiO2/Si) transistors generated by hot-carrier stressing. The defects are studied via electrically detected magnetic resonance (EDMR) through both spin-dependent charge pumping and spin-dependent tunneling. When combined, these techniques probe defects both at the Si-side interface and within the oxide-based gate stack. The defects at the Si-side interface are found to strongly resemble Pb-like defects common in the Si/SiO2 system. The defect within the gate stack has not been positively identified in the literature thus far; this work argues that it is a Si-dangling bond coupled to one or more hafnium atoms. The use of EDMR techniques indicates that the defects detected here are relevant to electronic transport and, thus, device reliability. This work also highlights the impressive analytical power of combined EDMR techniques when studying complex, modern materials systems. [ABSTRACT FROM AUTHOR]

Half-metallic Heusler alloys are receiving significant attention for spintronic applications utilizing magnetic tunnel junctions and requiring large spin polarization. Co2MnSi (CMS) is one of the most promising candidates for this purpose. Here, we report the magnetization dynamics of a thin, epitaxial CMS film in a magnetic CoFe/CMS bilayer structure sputtered on an MgO substrate. The magnetic precession frequency response of the CoFe/CMS bilayer shows a fourfold symmetry with respect to the azimuthal applied field angle, reflecting the crystal symmetry of the CMS layer and not the underlying CoFe film. Moreover, the effective Gilbert damping parameter exhibits inhomogeneous broadening at lower applied magnetic fields. At large fields, however, the azimuthal angle dependence disappears, and the intrinsic Gilbert damping is observed. This study provides insight into the dynamics of a magnetic bilayer structure that forms an integral element in spintronic applications. [ABSTRACT FROM AUTHOR]

Measuring thermal stability in magnetic random access memory devices is non-trivial. Recently, there has been much discussion on the appropriate model to use: single domain or domain wall nucleation. Of particular challenge is assessing the maximum size at which the single domain model can be assumed. Typically, this is estimated to be in the range of 20–30 nm based on a value of the exchange stiffness (A e x ) that is assumed, estimated using indirect measurements or derived from significantly thicker films. In this work, it is proposed that this maximum size can be measured directly via the "activation volume" (V a c t ) or the "activation diameter" (D a c t ), which originates from the concept of magnetic viscosity. This is conducted by measuring, using the time dependence of magnetization at different applied fields, D a c t in perpendicular magnetic tunnel junction pillars of varying effective anisotropy constant (K e f f ) and diameter. It is shown that the trend in D a c t follows 1 / K e f f dependence, in good agreement with the analytic model for the critical diameter of coherent switching. Critically, it is also found that the smallest size for which a single domain, with coherent reversal, occurs is 20 nm. Thus, in devices with technologically relevant values of K e f f , the macrospin model may only be used in 20 nm, or smaller, devices. [ABSTRACT FROM AUTHOR]

We report on the electron spin resonance (ESR) properties of a van der Waals bulk CrBr3 single crystal. Angular- and temperature-dependent studies are performed in the range of the critical temperature for ferromagnetic order. The angular-dependent data enable the determination of a strong uniaxial magnetic anisotropy constant, K, with the easy axis of magnetization being parallel to the crystallographic c axis. The peak-to-peak ESR linewidth below the Curie temperature shows contributions from the term (3 cos2 θ−1)2, thus suggesting the occurrence of long-wavelength (q → 0) modes of spin fluctuations typical for 2D systems. Finally, we analyze the temperature dependence of the double integrated ESR intensity, resonance field, and linewidth for the direction of the magnetic field parallel and perpendicular to the c easy axis. We determine Weiss's constant and the thermal dependence of K and observe the crossover region from linewidth narrowing to broadening approaching the critical temperature. Finally, we discuss our findings in the view of the potential application of CrBr3 in perpendicular magnetic tunneling junctions. [ABSTRACT FROM AUTHOR]

We investigated the effect of interfacial nitrogen (N) defects on tunnel magnetoresistance (TMR) in Fe/MgO/Fe magnetic tunnel junctions (MTJs) which are the basic building block of magnetoresistive random access memory. The N atoms are predicted to originate from the SiN covering for antioxidation. It was found from first-principles quantum-transport calculations that the N defects significantly worsen the TMR. This is particularly evident in the MTJ models with an additional N atom at the MgO/Fe interface, because a conduction channel appears in the antiparallel magnetization configuration due to the N defects. The TMR is directly related to the read error rate of data and the scaling of the memory cell. Therefore, the prevention of nitrogen contamination during the manufacturing processes is a prerequisite for maintaining high performance. [ABSTRACT FROM AUTHOR]

We study spin-transfer-torque-driven magnetization dynamics of a perpendicular magnetic tunnel junction nanopillar. Through the combined investigations on spin-torque ferromagnetic resonance and microwave spectroscopy, it is found that the free layer (FL) and the weak pinned reference layer (RL) exhibit distinct dynamic behaviors. First, frequency vs field dispersion for the FL and RL shows an opposite trend as the field varies. Second, the FL can support a single spin-wave (SW) mode for both parallel and antiparallel configurations, while the RL exhibits spin-wave excitation only for the antiparallel state. Those two SW modes coexist at the antiparallel state, and their oscillation frequency exhibits a crossover phenomenon with increasing the external magnetic field, which could be helpful in the mutual synchronization of auto-oscillations for SW-based neuromorphic computing. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junction (MTJ) is one of the cornerstones of modern information technologies. Bringing MTJ's operation beyond the conventional binary regime, enabled by tunneling magnetoresistance (TMR) effect, is highly promising for prospective memory technologies and neuromorphic hardware development. In this paper, we demonstrate multilevel magnetoresistance states in an all-perovskite-oxide La0.7Sr0.3MnO3 (LSMO)/BaTiO3/LSMO heterostructure grown on MgO substrates. Unlike traditional TMR, we observe four distinct regions of increased magnetoresistance, which result in three magnetic field-induced resistance states in total. We show that the observed phenomenon arises from the low-field magnetoresistance effect, which occurs in the two epitaxial LSMO layers, independently and at different values of the magnetic field. The effect is well simulated by a model based on the presence of structural defects and non-uniform deformations in the LSMO layers, induced by the large lattice mismatch of the LSMO with the MgO substrate. We believe that our findings contribute to the understanding of complex magnetoresistance effects in MTJs and can be taken into consideration for the design of multi-bit memory cells or neuromorphic devices. [ABSTRACT FROM AUTHOR]

Stochastic magnetic tunnel junction (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the stochastic output significantly varies with the voltage due to spin-transfer torque (STT) acting on the stochastic free layer. In this work, we study a s-MTJ with a "double-free-layer" design theoretically proposed earlier, in which the fixed reference layer of the conventional structure is replaced by another stochastic free layer, effectively mitigating the influence of STT on the stochastic output. We show that the key device property characterized by the ratio of relaxation times between the high- and low-resistance states is one to two orders of magnitude less sensitive to bias voltage variations compared to conventional s-MTJs when the top and bottom free layers are designed to possess the same effective thickness. This work opens a pathway for reliable, nanosecond-operation, high-output, and scalable spintronics-based p-bits. [ABSTRACT FROM AUTHOR]

Spin-transfer torque magnetic random access memory (MRAM) devices have considerable potential for high-performance computing applications; however, progress in this field has been hindered by difficulties in etching the magnetic tunnel junction (MTJ). One notable issue is electrical shorting caused by the accumulation of etching by-products on MTJ surfaces. Attempts to resolve these issues led to the development of step-MTJs, in which etching does not proceed beyond the MgO barrier; however, the resulting devices suffer from poor scalability and unpredictable shunting paths due to asymmetric electrode structures. This paper outlines the fabrication of pillar-shaped MTJs via a four-step etching process involving reactive-ion etching, ion-beam etching, oxygen exposure, and ion-trimming. The respective steps can be cross-tuned to optimize the shape of the pillars, prevent sidewall redeposition, and remove undesired shunting paths in order to enhance MTJ performance. In experiments, the proposed pillar-MTJs outperformed step-MTJs in key metrics, including tunneling magnetoresistance, coercivity, and switching efficiency. The proposed pillar-MTJs also enable the fabrication of MRAM cells with smaller cell sizes than spin–orbit torque devices and require no external field differing from voltage-controlled magnetic anisotropy devices. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions (MTJs), a key component of spin transfer torque magnetic random access memory, are typically fabricated using two main processes: plasma etching and in situ protective cap layer deposition. It has been found that while the etching process predominantly affects MTJ performance, the cap layer process can further enhance electrical and magnetic properties. In this study, we achieved performance improvements in MTJs by optimizing the cap layer deposition process through various experimental methods, such as modifying the gas mixtures used in the deposition process and incorporating a novel post-plasma treatment. During the deposition of the silicon nitride (SiNx) cap layer, N-rich dissociated compounds can induce passivation of the MTJ layer, leading to additional loss of tunneling magnetoresistance (TMR) and coercive field (Hc). To circumvent this challenge, we prioritized modifying the gas ratio in the SiNx deposition process. Additionally, hydrogen introduced during SiNx deposition can penetrate the MTJ pillars and degrade their properties. To mitigate this, we developed a novel post-nitrogen plasma treatment in a plasma-enhanced chemical vapor deposition chamber, which effectively desorbed the excess hydrogen from the MTJ film stack. As a result of these optimized processes, the TMR loss, compared to a blanket wafer, was reduced from 25% to 8%, and Hc increased by up to 33% for the same stack, achieving significant performance enhancements. [ABSTRACT FROM AUTHOR]

Nonlinear activation functions play a crucial role in artificial neural networks. However, digital implementations of sigmoidal functions, the commonly used activation functions, are facing challenges related to energy consumption and area requirements. To address these issues, we develop a proof-of-concept computing system that utilizes magnetic tunnel junctions as the key element for implementing sigmoidal activation functions. Using this system, we train a neural network for speech separation. When compared to state-of-the-art digital implementations, our scalable circuit has the potential to consume up to 383 times less energy and occupy 7354 times smaller area. These results pave the way for more efficient computing systems in the future. [ABSTRACT FROM AUTHOR]

The magnetic tunnel junctions (MTJs) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport, leading to the emergence of richer magnetoresistance behaviors. Here, using all 2D vdW MTJs based on magnetic metal Fe3GeTe2 and non-magnetic semiconductor MoSe2, we demonstrate that the magnitude and even sign of the magnetoresistance can be tuned by the applied voltage. The sign inversion of the magnetoresistance is observed in a wide temperature range below the Curie temperature. This tunable magnetoresistance sign may be attributed to the spin polarizations of the tunneling carriers and the band structure of the two ferromagnetic electrodes. Such robust electrical tunability of magnetoresistance extends the functionalities of low-dimensional spintronics and makes it more appealing for next-generation spintronics with all-vdW MTJs. [ABSTRACT FROM AUTHOR]

The stochastic computing (SC) has been proven to be an energy-efficient way to perform neural network. In this study, we propose a field-free voltage-controlled spintronics SC system based on the magnetic tunnel junction (MTJ). We observe a stochastic switching behavior of the MTJ and that it could be controlled by the voltage applied on the device. The voltage-controlled stochastic switching behavior is used to encode numbers ranging from 0 to 1 into a series of random bit-streams in the SC system. Furthermore, the handwritten recognition task is performed on the MTJ-based SC system, achieving a 95% maximum accuracy, which is comparable with the floating-point based neural network. Our work provides inspiration for the energy-efficient neural network systems. [ABSTRACT FROM AUTHOR]

Exploring the spin transport characteristics of magnetic tunnel junctions based on half-metallic Heusler holds significance, not only in unraveling the fundamental physics at play but also in advancing applications of spintronic devices. Here, density functional theory in conjunction with non-equilibrium Green's functions has been systematically employed to investigate two prominent Heusler alloys, Co2CrAl and CoFeCrAl, which are of direct interest to the candidates of magnetic tunnel junction. The electronic structures of two Hesler alloys reveal that both exhibit characteristics of half-metallic ferromagnets, featuring a substantial spin-down bandgap and achieving 100% spin polarization. The tunneling magnetoresistance ratios obtained for Co2CrAl/AlP/Co2CrAl and CoFeCrAl/AlP/CoFeCrAl magnetic tunnel junctions are determined to be 173% and 59%, respectively, with the former exhibiting superior device characteristics. Therefore, the Co2CrAl/AlP-based magnetic tunnel junction demonstrates ideal performance, providing new opportunities for two-dimensional spintronics. [ABSTRACT FROM AUTHOR]

Magnetic tunnel junctions based on FeCoB as a magnetic electrode and MgO as a tunneling barrier gained much attention because of their applications in random access memories and magnetic sensors in disk drives. In this work, the structural and magnetic properties of the MgO/FeCoB/MgO trilayer have been studied precisely under x-ray standing wave (XSW) conditions, where XSW is generated through a high-density (Pt) waveguide structure. The combined x-ray scattering and fluorescence data obtained under XSW conditions revealed the formation of a high-density FeCoB layer at the MgO/FeCoB interface (FeCoB-on-MgO) in the as-deposited trilayer. Diffusion of B from the FeCoB layer into MgO is attributed to the formation of Fe- and Co-rich high-density layer (B-deficient FeCoB layer) at the interface. Angular-dependent magnetism of the trilayer structure revealed the presence of in-plane magnetic anisotropy (IMA), which disappeared with thermal annealing at a temperature of 450 °C. Stress in B-deficient FeCoB layer at the interface is attributed to the origin of IMA through magneto-elastic anisotropy energy minimization. The disappearance of anisotropy after annealing is mainly due to the removal of long-range stress and the formation of crystalline bcc-FeCo phase. [ABSTRACT FROM AUTHOR]

Recent advancement in the switching of perpendicular magnetic tunnel junctions with an electric field has been a milestone for realizing ultra-low energy memory and computing devices. To integrate with current spin-transfer torque-magnetic tunnel junction and spin–orbit torque-magnetic tunnel junction devices, the typical linear fJ/V m range voltage controlled magnetic anisotropy (VCMA) needs to be significantly enhanced with approaches that include new materials or stack engineering. A possible bidirectional and 1.1 pJ/V m VCMA effect has been predicted by using heavily electron-depleted Fe/MgO interfaces. To improve upon existing VCMA technology, we have proposed inserting high work function materials underneath the magnetic layer. This will deplete electrons from the magnetic layer biasing the gating window into the electron-depleted regime, where the pJ/V m and bidirectional VCMA effect was predicted. We have demonstrated tunable control of the Ta/Pd(x)/Ta underlayer's work function. By varying the Pd thickness (x) from 0 to 10 nm, we have observed a tunable change in the Ta layer's work function from 4.32 to 4.90 eV. To investigate the extent of the electron depletion as a function of the Pd thickness in the underlayer, we have performed DFT calculations on supercells of Ta/Pd(x)/Ta/CoFe/MgO, which demonstrate that electron depletion will not be fully screened at the CoFe/MgO interface. Gated pillar devices with Hall cross geometries were fabricated and tested to extract the anisotropy change as a function of applied gate voltage for samples with various Pd thicknesses. The electron-depleted Pd samples show three to six times VCMA improvement compared to the electron accumulated Ta control sample. [ABSTRACT FROM AUTHOR]

A highly lattice-matched all-Heusler-alloy magnetic tunnel junction (MTJ) is proposed by associating half metallic CoFeTiSi electrode and non-magnetic semiconductor Fe2TiSi barrier. Based on the non-equilibrium Green's function combined with first-principles calculations, spin transport mechanism is studied by analyzing the transmission coefficient, local density of states, and scattering states. The calculated equilibrium tunnel magnetoresistance (TMR) ratio in CoFeTiSi/Fe2TiSi/CoFeTiSi reaches up to about 3.30 × 108%, which is much higher than in CoFeTiSi/MgO/CoFeTiSi. The calculated scattering states reveal that CoFeTiSi/Fe2TiSi/CoFeTiSi MTJ possesses two transport channels, and the contribution of channel I to the total transport is about 80%, which plays a dominate role. The analyses on non-equilibrium spin transport properties reveal that CoFeTiSi/MgO/CoFeTiSi MTJ can output a high intensity transport current with complete spin polarization, and it can output a stable and highly efficient signal. The TMR ratio possesses an extremely large value of about 2.4 × 108% and even the bias voltage increases to 0.2 V, exhibiting a robust current-driven stability. [ABSTRACT FROM AUTHOR]

The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this study, we realized a reliable electrical control of the switching layer in perpendicular MTJs with 0.1 nm Ir dusting. Specifically, a voltage pulse with a higher amplitude drives the magnetization switching of the MTJ's bottom electrode, while a lower voltage amplitude switches its top electrode. We discussed the origin of this controllability and excluded the possibility of back-hopping. Given the established studies on enhancing the voltage-controlled magnetic anisotropy effect by adopting Ir, we attribute this switching behavior to the significant diffusion of Ir atoms into the top electrode, which is supported by scanning transmission electron microscopy with atomic resolution. [ABSTRACT FROM AUTHOR]

Enhancing the performance of magnetic random access memories (MRAMs) is crucial, considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer ultrafast operation and enhanced reliability. Still, the energy efficiency and external magnetic field requirement for deterministic switching of nanomagnets with perpendicular magnetic anisotropy (PMA) are a significant hurdle. To address these issues, one of the proposed solutions employs a conically magnetized free layer magnetic tunnel junction device featuring second-order PMA. This approach can minimize the required switching current density by leveraging the interplay between first- and second-order PMA energies. Additionally, coupling with exchange bias from the antiferromagnet can eliminate the need for an external field entirely. Our analysis investigates the impact of current density (magnitude and rise/fall time), first- and second-order PMA fields, exchange bias, and field-like torque on the device's switching performance. By optimizing the perpendicular magnetic anisotropies, we report improvement in the write error rate from 10 − 4 to 10 − 7 . Our findings hold promise for magnetic memory applications. [ABSTRACT FROM AUTHOR]

Spintronics devices have been a research hotspot due to their rich theoretical and application value. The widebandgap semiconductor β-Ga2O3 has excellent application potential in spintronics due to the controllability of its electron behavior via ultraviolet light. This paper employs first-principles calculations and the Wenzel–Kramers–Brillouin (WKB) approximation to comprehensively investigate spin transport based on magnetic tunnel junctions (MTJs) comprising β-Ga2O3 nanosheets. The magnetic moment of the ferromagnetic layer in β-Ga2O3 MTJs is found to be positively correlated with tunnel magnetoresistance (TMR). Interestingly, layer-number parity-dependent oscillation of TMR in β-Ga2O3 MTJs is observed, which is explained by the non-equilibrium Green function and the WKB approximation. TMR reaches a maximum of 1077% at five layers, and bias-dependent stability is observed in the monolayer model under biases of 0–20 mV. This study not only expands the application potential of β-Ga2O3 and predicts its superiority in spintronics but also enriches the related condensed matter theory. [ABSTRACT FROM AUTHOR]

The tri-layer magnetic tunnel junction (MTJ) has surfaced as a building block for engineering next-generation integrated circuits while combining the attributes of non-volatility and meager energy consumption. Nevertheless, the perceptible switching energy (≈ 20 – 50 fJ/bit) and sub-optimal tunnelmagnetoresistance (TMR) (≈ 200 % – 300 %) have acted as major hindrances, concealing its potential to supersede the capabilities of static and dynamic random access memories. In this work, we introduce a novel device that features a minimalistic non-uniform heterostructure/superlattice instead of the oxide layer in a conventional MTJ and analyze it in the premise of the self-consistent coupling of the Non-Equilibrium-Green's Function (NEGF) and the Landau-Liftshitz-Gilbert-Slonczewski (LLGS) equation. We ascertain that the coupling of the electrodes to the proposed heterostructure renders a highly spin-selective broadband transmittance, thereby enabling a towering TMR (%) of 3.7 × 104% along with a significant reduction in the spin transfer torque (STT) switching energy (≈1.96 fJ). Furthermore, the sizable slonczewski term (Is‖) originating from the heterostructure facilitates a swift STT-switching within the scale of a few hundred picoseconds (≈400 ps). [ABSTRACT FROM AUTHOR]

Leaky-integrate-fire (LIF) neurons are core components to construct a spiking neural network. The emulation of LIF neurons has been implemented in spintronic devices, but typically suffers from challenges, such as relatively complex design and the requirement of additional operations for resetting. In this Letter, we propose a compact LIF neuron device realized within a single spin–orbit torque (SOT) magnetic tunnel junction device. Distinct from standard memory devices, the input SOT current for the integrating process is applied in a manner such that the magnetization cannot cross the hard plane. Consequently, the device can automatically reset to its original state by the combined effects of anisotropy and damping, which play a vital role during the leaky process as well. We verify the proposal in three types of SOT devices by micromagnetic simulations, and the power consumption is estimated as 0.1 pJ/spike. The auto-reset process is further captured by our single-shot dynamic experiments. With the state-of-the-art SOT technology, our work provides a concise and plausible scheme to mimic LIF neurons, which is of practical interest for neuromorphic computing. [ABSTRACT FROM AUTHOR]