1. Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN.
- Author
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Kang, Sang Won, Park, Hyun Jong, Won, Yong Sun, Kryliouk, Olga, Anderson, Tim, Khokhlov, Dmitry, and Burbaev, Timur
- Subjects
SPECTRUM analysis ,COLD (Temperature) ,SURFACES (Physics) ,PHOTOLUMINESCENCE ,LUMINESCENCE ,THERMAL properties - Abstract
The low decomposition temperature of InN and relatively high thermal stability of NH
3 necessitate the use of a high NH3 /TMIn ratio to prevent In droplet formation on the surface. This work shows that the addition of Cl in the form of HCl (Cl/In molar ratio range of 0.3–1.4) to the growth chamber allows the growth of high quality InN films without the formation of a second In phase at a very low value of the N/In molar inlet ratio (2500). Photoluminescence spectra in the temperature range of 144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of the InN band gap energy (0.65 eV). [ABSTRACT FROM AUTHOR]- Published
- 2007
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