Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN.

The low decomposition temperature of InN and relatively high thermal stability of NH₃ necessitate the use of a high NH₃/TMIn ratio to prevent In droplet formation on the surface. This work shows that the addition of Cl in the form of HCl (Cl/In molar ratio range of 0.3–1.4) to the growth chamber allows the growth of high quality InN films without the formation of a second In phase at a very low value of the N/In molar inlet ratio (2500). Photoluminescence spectra in the temperature range of 144 to 4.5 K showed a broad spectral band with a cutoff energy close to the reported minimum of the InN band gap energy (0.65 eV). [ABSTRACT FROM AUTHOR]