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Presents results from a two-dimensional model for dust particle transport in reactive ion etching of discharges in which the authors included particle-particle Coulomb interactions. Formation of Coulomb liquids and solids; Ratio of electrostatic potential energy to thermal energy; Pair correlation function; Ejection of particles from dust crystals.

Focuses on a study which measured ion energy distributions (IED) incident on the grounded electrode of a radio frequency glow discharge sustained in a helium and nitrogen gas mixture. Materials and procedure; Discussion on the importance of the IED in the context of plasma etching during the fabrication of microelectronics devices; Description of the shape of IED for nitrogen ions.

Presents a study which investigated the consequences of the contamination of electron-beam-excited krypton fluoride lasers by CF[sub4]. Description of the model used in the study; Source of the decrease in the density of krypton fluoride; Discussion on laser power as a function of time and laser power efficiency.

Examines the particle contamination of wafers in a high plasma density inductively coupled plasma (ICP) reactor. Impact of wafer contamination on the microelectronic devices; Influence of high ion fluxes to wafer contamination; Identification of the regimes of particle contamination for different ICP powers and radio frequency biases.