1. Enhanced hole injection in organic light-emitting devices by using Fe3O4 as an anodic buffer layer.
- Author
-
Dan-Dan Zhang, Jing Feng, Yue-Feng Liu, Yu-Qing Zhong, Yu Bai, Yu Jin, Guo-Hua Xie, Qin Xue, Yi Zhao, Shi-Yong Liu, and Hong-Bo Sun
- Subjects
SPECTRUM analysis ,MOLECULAR orbitals ,ELECTRON spectroscopy ,SOLID state electronics ,MOLECULAR spectroscopy ,PHOTOELECTRON spectroscopy - Abstract
Hole injection improvement in organic light-emitting devices with Fe
3 O4 as a buffer layer on indium tin oxide (ITO) has been demonstrated. The luminance and the current density are significantly enhanced by using the Fe3 O4 /ITO anode, as well as the turn-on voltage is reduced by 1.5 V compared to the devices without the buffer. Results of atom force microscopy, x ray, and UV photoelectron spectroscopy studies reveal that the enhanced hole injection is attributed to the modification of the ITO surface and the reduced hole-injection barrier by the insertion of the Fe3 O4 thin film between the ITO and hole-transporting layer. [ABSTRACT FROM AUTHOR]- Published
- 2009
- Full Text
- View/download PDF