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Equiatomic FePt thin films with fcc or L10 structure were studied by x-ray-absorption spectroscopy. The extended x-ray-absorption fine structure and x-ray-absorption near edge structure analysis, sensitive to the local structure and chemical order, show the formation of a Fe-rich neighborhood around Fe, indicating segregation of atomic species inside the film, and not a random distribution, as pointed out in the literature. The polarization dependence of the extended x-ray-absorption fine structure signal reveals and quantifies the different chemical and local order inside the samples, for both kinds of structure. The results are correlated with the long-range structural order measured by x-ray diffraction and magnetic properties of the material. [ABSTRACT FROM AUTHOR]

When applied to a system of sizeable vertical extent that can undergo adiabatic expansion/compression, the Rayleigh-Bénard treatment of convection between two parallel plates, kept at constant temperature, needs to be amended with the consideration of potential temperature as the conserved thermodynamic variable. The fixed-temperature boundary conditions are therefore expressed as a combination of potential temperature and pressure, and this causes the solutions to be a mixture of the odd and even modes of the classical problem. Here, solutions are presented for a rotating system, which supports both stationary and oscillatory modes. While the stationary modes are all stabilized by this mechanism, as was shown previously for a nonrotating system, the oscillatory modes can have a lower critical Rayleigh number than their traditional counterpart, when the Prandtl number is approximately between 0.2 and 1.0. [ABSTRACT FROM AUTHOR]

Presents a study in which cobalt oxide thin films with different stoichiometrics were deposited by reactive radio frequency sputtering. Result of the variation of the oxygen partial pressure; Investigation of the electrochromic properties of the thin films in aqeous electrolytes; Characterization of as-sputtered films.

Deals with a study which compared the results of liquid junction interfaces with Schottky barrier device configurations and metal-oxide semiconductors to characterize the damage to silicon promoted by reactive ion etching. Applications of liquid junctions for dielectric characterization of silicon; Methodology of the study; Results and discussion.

Presents a study that analyzed the dielectric properties of the reactive ion-etched silicon/liquid junction interfaces of several plasmas. Background on impedance spectroscopy; Examination of the relationship between reactive ion etching (RIE) and circuitry configuration; Assessment of the nature of damage caused by RIE treatments.

Part II. Compares the photoreflectance of the n-silicon (Si)/air interface with the electrolyte-electroreflectance (EER) and electrolyte-photoreflectance of the n-Si/methanol interface. Reversible changes in line shape and in peak position of the photoreflectance (PR) signals; Effect of the presence of the methanolic electrolytes on the relaxation time of the surface states; Low-field limit of EER and PR.

Investigates photoreflectance, electrolyte photoreflectance (PR) and electrolyte electroreflectance (EER) for various reactive ion etching treatments of n-silicon. Use of modulation spectroscopy; Dependence of the amplitude of the EER transition on the electrode potential for untreated silicon; Low-field limit of EER and PR.

Part I. Focuses on a study that demonstrated the application of photoreflectance, electroreflectance and impedance spectroscopy as complementary techniques to study the potential distribution of the silicon/methanol interface before and after etching. Details of the experiment; Results; Discussion.

Presents information on a study which determined the structural properties of amorphous silicon carbide thin films. Experimental procedure; Results; Discussion.