4 results on '"Jiang, Guangyuan"'
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2. A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate.
3. Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method.
4. Polarization Coulomb field scattering with the electron systems in AlGaN/GaN heterostructure field-effect transistors.
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