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The microstructure and chemical bonding states of pure and Ce-doped BiFe[O.sub.3] (BFO) films are characterized by scanning electron microscope (SEM) and Raman spectrum. The enhanced magnetic properties for the [Bi.sub.1-x][Ce.sub.x]Fe[O.sub.3] (BCFO) films are attributed to the presence of [Fe.sup.2+] caused by oxygen vacancies, the suppressed spiral spin structure, and/or the increase canting angle induced by Ce doping.

First-principles methods are used for studying the mechanism of defect formation and electronic structures for 3d transition-metal impurities doped in silicon nanowires. The results have shown that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires.

Sol-gel-derived ([Ba.sub.0.65], [Sr.sub.0.35])Ti[O.sub.3] (BST) films are etched in C[F.sub.4]/Ar and C[F.sub.4]/Ar/[O.sub.2] plasmas by using magnetically enhanced reaction ion etching technology (MERIE) technology. The results have indicated that there are no significant differences between the unetched BST film and the postannealed after etched film with respect to the fitted formulas and average valences of Ti cations.