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Your search keyword '"Park, Y.‐J."' showing total 3 results
Start Over Author "Park, Y.‐J." Publisher american institute of physics, inc.
3 results on '"Park, Y.‐J."'

1. Ferromagnetic behavior of p-type GaN epilayer implanted with Fe(super +) ions

Author

Yoon Shon, Young Hae Kwon, Yuldashev, Sh. U., Seung Joo Lee, Park, C. S., Chung, K. J., S. J. Yoon, Kim, H. J, Park, Y.S., W. C. Lee, D. J. Fu, T. W. Kang, X. J. Fan, Park, Y. J., and H. T. Oh

Subjects
Photoluminescence -- Analysis, Chemical vapor deposition -- Analysis, Iron -- Magnetic properties, Ferromagnetism -- Analysis, Physics
Abstract

The p-type GaN epilayers are prepared by metalorganic chemical vapor deposition and subsequently implanted with Fe(super +) ions. The study confirms that the photoluminescence peak at 2.5 eV is a donor-Fe acceptor transition and the photoluminescence peak around 3.1 eV is a conduction band-Fe acceptor transition.

Published
2004

2. Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy

Author

Song, J. D., Park, Y. M., Lim, J. G., Park, Y. J., Lee, J. I., Shin, J. C., Choi, W. J., and Han, I. K.

Subjects
Epitaxy -- Research, Quantum wells -- Research, Arsenic -- Electric properties, Arsenic -- Optical properties, Indium -- Electric properties, Indium -- Optical properties, Physics
Abstract

The influence of arsenic during the deposition of indium on the structural and optical properties of InAs quantum dots (QDs) grown by migration-enhanced epitaxy is reported. Findings revealed that when indium is deposited without arsenic the height uniformity is enhanced by a factor of two, the size of the QDs is larger and the density of the QDs is reduced by half.

Published
2004

3. Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices

Author

Son, S. H., Cho, K. H., Hwaang, S. W., Kim, K. M., Park, Y. J., Kim, W. Y., and Yu, Y. S.

Subjects
Nanotechnology -- Analysis, Field-effect transistors -- Analysis, Quantum theory -- Analysis, Physics
Abstract

A quantum dot transistors (QDT) and a nanowire transistor from a metal-semiconductor field-effect-transistors (MESFET)-type GaAs wafer was fabricated and characterized at low temperatures. The nanodevices showed a quantum mechanical effect like scanning electron microscope (SET) through excited states and negative differentail resistance (NDR).

Published
2004

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