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Extended defect evolution was studied in ion-implanted epitaxial silicon during high-temperature processing.

The electrical properties of interstitial clusters in ion-implanted silicon (Si) were characterized using deep level transient spectroscopy. The study focused on n-type Si and examined how the kinetics of evolution and dissociation of these clusters are affected by impurity content and implantation dose. The findings showed that only the K lines and the B lines are associated with interstitial clusters. It was found that B1, B2, KA and KS belong to the same defect clusters while KZ is linked to the occurrence of O in the Si.

The microwave photoconductive decay technique and transmission electron microscopy were used to examine the impact of platinum gettering at various sites in a polycrystalline silicon wafer. Specifically, the thermal stability and efficiency of gettering at damaged sites formed by ion implantation of boron, carbon or silicon, voids formed by helium implants of silicon, heavily doped n-type regions formed by phosphorus diffusion.

Determination of electrical and optical properties of Er-implanted Si shows that electrical activation can be increased by doping Si with oxygen or carbon. Presence of oxygen precipitates distorts the process of luminescence in the oxygen doped samples. Carbon doped samples reveal an enhancement in photoluminescence intensity. Residual defects are low in carbon-doped samples. Oxygen doped and carbon doped Si show variations of intensity ratio of the main photoluminescence peak.

The three-dimensional concentration profiles of ion-implanted Au, Pt and Zn in crystalline silicon were investigated. The results showed that the lateral spread under the mask was bigger than the vertical diffusion, especially on the side opposite to the implanted diffusion source. The features of the measured profiles were brought about by the kick-out mechanism of diffusion for the transition metals.

The structural and optical properties of Si-rich silicon oxide (SRSO) layers obtained by plasma enhanced chemical vapor deposition (PECVD) and magnetron sputtering is examined. The studies have shown that in PECVD films only around 30% of the Si excess agglomerates in clusters while an almost complete agglomeration has occurred in sputtered films.

The electrical properties of interstitial clusters in ion-implanted silicon (Si) were characterized using deep level transient spectroscopy. The study focused on n-type Si and examined how the kinetics of evolution and dissociation of these clusters are affected by impurity content and implantation dose. The findings showed that only the K lines and the B lines are associated with interstitial clusters. It was found that B1, B2, KA and KS belong to the same defect clusters while KZ is linked to the occurrence of O in the Si.