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Your search keyword '"Bilenko, Yu."' showing total 2 results
Start Over Author "Bilenko, Yu." Publisher american institute of physics, inc.
2 results on '"Bilenko, Yu."'

1. Current and optical noise of GaN/AlGaN light emitting diodes

Author

Sawyer, S., Rumyantsev, S.L., Shur, M.S., Pala, N., Bilenko, Yu., J.P. Zhang, X. Hu, Lunev, A., J. Deng, and Gaska, R.

Subjects
Light-emitting diodes -- Acoustic properties, Wavelength -- Analysis, Gallium compounds -- Acoustic properties, Gallium compounds -- Electric properties, Physics
Abstract

The low frequency current and light intensity noise of the next generation light emitting diodes (LEDs) with wavelengths ranging from 265 to 340 nm is reported. The relative spectral noise density of the light intensity fluctuations decreased with an increase of the LED forward current and at high currents, the difference in the noise level for LEDs with different wavelength is small and is of the same order of magnitude or even smaller than for visible LEDs.

Published
2006

2. 1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300

Author

Rumyantsev, S.L., Pascal, F., Shur, M.S., Hoffman, A., Dyakonova, N., Hu, X., Knap, W., Fareed, Q., Meziani, Y., Gaska, R., and Bilenko, Yu.

Subjects
Gallium nitrate -- Research, Gallium nitrate -- Electric properties, Gallium nitrate -- Magnetic properties, Magnetic fields -- Research, Aluminum -- Research, Aluminum -- Electric properties, Aluminum -- Magnetic properties, Physics
Abstract

The study of the electrical and noise properties of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) at T=300 K in magnetic fields up to 10 T, where the devices exhibited a strong geometric magnetoresistance is presented. It was found that the magnetic field dependence of the 1/f noise is consistent with the conclusion that the fluctuation of the number of electrons is the dominant mechanism of the 1/f noise in these devices.

Published
2004

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