1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300

The study of the electrical and noise properties of the AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) at T=300 K in magnetic fields up to 10 T, where the devices exhibited a strong geometric magnetoresistance is presented. It was found that the magnetic field dependence of the 1/f noise is consistent with the conclusion that the fluctuation of the number of electrons is the dominant mechanism of the 1/f noise in these devices.