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Understanding the interfacial adsorption of polymers has become increasingly important because a wide range of scientific disciplines utilize these macromolecular structures to facilitate processes such as nanoparticle assembly, environmental remediation, electrical multilayer assembly, and surfactant adsorption. Structure and adsorption characteristics for poly(acrylic acid) at the oil−water interface have been studied using vibrational sum frequency spectroscopy and interfacial tension to increase the comprehension of polyelectrolyte structure at interfaces. The adsorption of poly(acrylic acid) to the oil−water interface from the aqueous phase is found to be highly pH dependent and occurs in a multistep process, with the initial polymer adsorption displaying a high degree of conformational ordering. [ABSTRACT FROM AUTHOR]

Interconnectivity between functional building blocks (such as neurons and synapses) represents a fundamental functionality for realizing neuromorphic systems. However, in the domain of neuromorphic photonics, synaptic interlinking and cascadability of spiking optical artificial neurons remains challenging and mostly unexplored in experiments. In this work, we report an optical synaptic link between optoelectronic spiking artificial neurons based upon resonant tunneling diodes (RTDs) that allows for cascadable spike propagation. First, deterministic spiking is triggered using multimodal (electrical and optical) inputs in RTD-based spiking artificial neurons, which are optoelectronic (OE) circuits incorporating either micron-scale RTDs or photosensitive nanopillar-based RTDs. Second, feedforward linking with dynamical weighting of optical spiking signals between pre- and postsynaptic RTD artificial neurons is demonstrated, including cascaded spike activation. By dynamically weighting the amplitude of optical spikes, it is shown how the cascaded spike activation probability in the postsynaptic RTD node directly follows the amplitude of the weighted optical spikes. This work therefore provides the first experimental demonstration of programmable synaptic optical link and spike cascading between multiple fast and efficient RTD OE spiking artificial neurons, therefore providing a key functionality for photonic-electronic spiking neural networks and light-enabled neuromorphic hardware., Competing Interests: The authors declare no competing financial interest., (© 2024 The Authors. Published by American Chemical Society.)

The low thermal conductivity of group IV-VI semiconductors is often attributed to the soft phonons and giant anharmonicity observed in these materials. However, there is still no broad consensus on the fundamental origin of this giant anharmonic effect. Utilizing first-principles calculations and group symmetry analysis, we find that the cation lone-pairs s electrons in IV-VI materials cause a significant coupling between occupied cation s orbitals and unoccupied cation p orbitals due to the symmetry reduction when atoms vibrate away from their equilibrium positions under heating. This leads to an electronic energy gain, consequently flattening the potential energy surface and causing soft phonons and strong anharmonic effects. Our findings provide an intrinsic understanding of the low thermal conductivity in IV-VI compounds by connecting the anharmonicity with the dynamical electronic structures, and can also be extended to a large family of hybrid systems with lone-pair electrons, for promising thermoelectric applications and predictive designs.

Diamond has become a promising candidate for high-power devices based on its ultrawide bandgap and excellent thermoelectric properties, where an appropriate gate dielectric has been a bottleneck hindering the development of diamond devices. Herein, we have systematically investigated the structural arrangement and electronic properties of diamond/high-κ oxide (HfO 2 , ZrO 2 ) heterojunctions by first-principles calculations with a SiO 2 interlayer. Charge analysis reveals that the C-Si bonding interface attracts a large amount of charge concentrated at the diamond interface, indicating the potential for the formation of a 2D hole gas (2DHG). The diamond/HfO 2 and diamond/ZrO 2 heterostructures exhibit similar "Type II" band alignments with VBOs of 2.47 and 2.21 eV, respectively, which is consistent with experimental predictions. The introduction of a SiO 2 dielectric layer into the diamond/SiO 2 /high-κ stacks exhibits the typical "Type I″ straddling band offsets (BOs). In addition, the wide bandgap SiO 2 interlayer keeps the valence band maximum (VBM) and conduction band minimum (CBM) in the stacks away from those of diamond, effectively confining the electrons and holes in MOS devices. This work exhibits the potential of SiO 2 /high-κ oxide gate dielectrics for diamond devices and provides theoretical insights into the rational design of high-quality gate dielectrics for diamond-based MOS device applications.

A short route from dihydrocarvone is described, which led to the tetracarbocyclic core common to artatrovirenol A and B and daphnenoid A. A variant of this route afforded guaia-4,6-dien-3-one (from Enterospermum madagascarensis ) and its epimer. From 2-(2-oxoethyl)furan, a 15-step sequence then delivered the complete carbon skeleton and all functionality necessary for daphnenoid A. Key steps in the route include diastereoselective intramolecular oxidopyrylium cycloaddition, oxa-bridge cleavage under "push-pull" conditions, and intramolecular Diels-Alder cycloaddition.

Achieving single-step syntheses of a set of related compounds divergently and selectively from a common starting material affords substantial efficiency gains when compared with preparing those same compounds by multiple individual syntheses. In order for this approach to be realized, complementary reagent systems must be available; here, a panel of engineered P450 BM3 enzymes is shown to fulfill this remit in the selective C-H hydroxylation of cyclobutylamine derivatives at chemically unactivated sites. The oxidations can proceed with high regioselectivity and stereoselectivity, producing valuable bifunctional intermediates for synthesis and applications in fragment-based drug discovery. The process also applies to bicyclo[1.1.1]pentyl (BCP) amine derivatives to achieve the first direct enantioselective functionalization of the bridging methylenes and open a short and efficient route to chiral BCP bioisosteres for medicinal chemistry. The combination of substrate, enzyme, and reaction engineering provides a powerful general platform for small-molecule elaboration and diversification.

Two total syntheses are presented for trigoxyphins K and L, tricyclic terpenoids from Trigonostemon xyphophylloides . The first proceeds via electrophlic cyclization in A/C-ring substrates to close the B ring at C4-C5 and then 1 O 2 -mediated hydroxybutenolide formation to trigoxyphin L, with Luche reduction leading to trigoxyphin K. The second route develops from tetralone ring expansion to a B/C-ring intermediate that, by one-step O-demethylation-lactonization-isomerization, affords trigoxyphin K and then trigoxyphin L following enolate oxygenation.

Nowadays, trifluoromethyl sulfonyl fluoride (CF 3 SO 2 F) has shown great potential to replace SF 6 as an eco-friendly insulation medium in the power industry. In this work, an effective and low-cost design strategy toward ideal gas sensors for the decomposed gas products of CF 3 SO 2 F was proposed. The strategy achieved high-throughput screening from a large candidate space based on first-principle calculation and machine learning (ML). The candidate space is made up of different transition metal-embedded graphic carbon nitrides (TM/g-C 3 N 4 ) owing to their high surface area and subtle electronic structure. Four main noteworthy decomposition gases of CF 3 SO 2 F, namely, CF 4 , SO 2 , SO 2 F 2 , and HF, as well as their initial stable structure on TM/g-C 3 N 4 were determined. The best-performing ML model was established and implemented to predict the interaction strength between gas products and TM/g-C 3 N 4 , thus determining the promising gas-sensing materials for target gases with the requirements of interaction strength, recovery time, sensitivity, and selectivity. Further analysis guarantees their stability and reveals the origin of excellent properties as a gas sensor. The high-throughput strategy opens a new avenue of rational and low-cost design principles of desirable gas-sensing materials in an interdisciplinary view.

2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. We explore the possibility to create an artificial spin polarized electrode from graphene through proximity interaction with a ferromagnetic insulator to be used in a magnetic tunnel junction (MTJ). Ferromagnetic insulator/graphene artificial electrodes were fabricated and integrated in MTJs based on spin analyzers. Evidence of the emergence of spin polarization in proximitized graphene layers was observed through the occurrence of tunnel magnetoresistance. We deduced a spin dependent splitting of graphene's Dirac band structure (∼15 meV) induced by the proximity effect, potentially leading to full spin polarization and opening the way to gating. The extracted spin signals illustrate the potential of 2D quantum materials based on proximity effects to craft spintronics functionalities, from vertical MTJs memory cells to logic circuits.

Weaker Fermi level pinning (FLP) at the Schottky barriers of 2D semiconductors is electrically desirable as this would allow a minimizing of contact resistances, which presently limit device performances. Existing contacts on MoS 2 have a strong FLP with a small pinning factor of only ∼0.1. Here, we show that Moire interfaces can stabilize physisorptive sites at the Schottky barriers with a much weaker interaction without significantly lengthening the bonds. This increases the pinning factor up to ∼0.37 and greatly reduces the n-type Schottky barrier height to ∼0.2 eV for certain metals such as In and Ag, which can have physisorptive sites. This then accounts for the low contact resistance of these metals as seen experimentally. Such physisorptive interfaces can be extended to similar systems to better control SBHs in highly scaled 2D devices.

Two-dimensional hexagonal boron nitride (h-BN) is studied as a tunnel barrier in magnetic tunnel junctions (MTJs) as a possible alternative to MgO. The tunnel magnetoresistance (TMR) of such MTJs is calculated as a function of whether the interface involves the chemi- or physisorptive site of h-BN atoms on the metal electrodes, Fe, Co, or Ni. It is found that the physisorptive site on average produces higher TMR values, whereas the chemisorptive site has the greater binding energy but lower TMR. It is found that alloying the electrodes with an inert metal-like Pt can induce the preferred absorption site on Co to become a physisorptive site, enabling a higher TMR value. It is found that the choice of physisorptive sites of each element gives more Schottky-like dependence of their Schottky barrier heights on the metal work function.

The nanowire (NW) and gate-all-around (GAA) technologies are regarded as the ultimate solutions to sustain Moore's law benefitting from the exceptional gate control ability. Herein, we conduct a comprehensive ab initio quantum transportation calculation at different diameters (single trigonal-tellurium NW (1Te) and three trigonal-tellrium NW (3Te)) sub-5 nm tellurium (Te) GAA NW metal-oxide-semiconductor field-effect transistors (MOSFETs). The results claim that the performance of 1Te FETs is superior to that of 3Te FETs. Encouragingly, the single Te (1Te) n-type MOSFET with 5 nm gate length achieves International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) and low-dissipation (LP) goals simultaneously. Especially, the HP on-state current reaches 6479 μA/μm, 7 times higher than the goal (900 μA/μm). Moreover, the subthreshold swing of the n-type 1Te FETs even hits a thermionic limit of 60 mV/dec. In terms of the spin-orbit coupling effect, the drain currents of devices are further improved, particularly the p-type Te FETs can also achieve the ITRS HP goal. Hence, the GAA Te MOSFETs provide a feasible approach for state-of-the-art sub-5 nm device applications.

We present multiplexer methodology and hardware for nanoelectronic device characterization. This high-throughput and scalable approach to testing large arrays of nanodevices operates from room temperature to milli-Kelvin temperatures and is universally compatible with different materials and integration techniques. We demonstrate the applicability of our approach on two archetypal nanomaterials-graphene and semiconductor nanowires-integrated with a GaAs-based multiplexer using wet or dry transfer methods. A graphene film grown by chemical vapor deposition is transferred and patterned into an array of individual devices, achieving 94% yield. Device performance is evaluated using data fitting methods to obtain electrical transport metrics, showing mobilities comparable to nonmultiplexed devices fabricated on oxide substrates using wet transfer techniques. Separate arrays of indium-arsenide nanowires and micromechanically exfoliated monolayer graphene flakes are transferred using pick-and-place techniques. For the nanowire array mean values for mobility μ FE = 880/3180 cm 2 V -1 s -1 (lower/upper bound), subthreshold swing 430 mV dec -1 , and on/off ratio 3.1 decades are extracted, similar to nonmultiplexed devices. In another array, eight mechanically exfoliated graphene flakes are transferred using techniques compatible with fabrication of two-dimensional superlattices, with 75% yield. Our results are a proof-of-concept demonstration of a versatile platform for scalable fabrication and cryogenic characterization of nanomaterial device arrays, which is compatible with a broad range of nanomaterials, transfer techniques, and device integration strategies from the forefront of quantum technology research.

As silicon-based electronic devices rapidly reach their scaling limits, novel two-dimensional (2D) semiconductors, such as graphene nanoribbon, transition metal dichalcogenides, and phosphorene, are becoming promising channel materials. Antimonene has been proved suitable for ultrascaled field-effect transistors (FETs) benefiting from its superior semiconducting properties. Considering that antimonene shows different effective mass from 0° (zigzag) to 30° (armchair), we have calculated the anisotropic transport property of monolayer (ML) antimonene metal-oxide-semiconductor FET (MOSFETs), including on-state current, subthreshold swing, effective mass, intrinsic delay time, and power dissipation. Encouragingly, 0° (zigzag) and 19.1° directions ML antimonene MOSFETs with 4 nm gate length and 1 nm underlap achieve the International Technology Roadmap for Semiconductors (ITRS) high-performance (HP) goal in 2028. The performance of ML antimonene MOSFETs still can fulfill the ITRS HP goal, when the spin-orbit coupling effect is considered. The magnitude of on-state currents in all calculations generally varies inversely with the effective mass. Therefore, we predict that other transmission directions with effective masses between 0.291 and 0.388 m 0 can also achieve the ITRS HP goal, which enables antimonene to be a promising channel material.

Synthetic lethality is an innovative framework for discovering novel anticancer drug candidates. One example is the use of PARP inhibitors (PARPi) in oncology patients with BRCA mutations. Here, we exploit a new paradigm based on the possibility of triggering synthetic lethality using only small organic molecules (dubbed "fully small-molecule-induced synthetic lethality"). We exploited this paradigm to target pancreatic cancer, one of the major unmet needs in oncology. We discovered a dihydroquinolone pyrazoline-based molecule ( 35d ) that disrupts the RAD51-BRCA2 protein-protein interaction, thus mimicking the effect of BRCA2 mutation. 35d inhibits the homologous recombination in a human pancreatic adenocarcinoma cell line. In addition, it synergizes with olaparib (a PARPi) to trigger synthetic lethality. This strategy aims to widen the use of PARPi in BRCA -competent and olaparib-resistant cancers, making fully small-molecule-induced synthetic lethality an innovative approach toward unmet oncological needs.

Azidoalkyl enol ethers undergo intramolecular 1,3-dipolar cycloaddition to generate stable triazolines; in contrast, the cycloadducts formed by heating analogous azidoalkyl vinyl bromides are unstable with respect to elimination of N 2 and HBr, affording 1-azadienes (2-alkenyl cyclic imines). These primary products may be isolated or treated directly with diphenylketene to produce bi- and tricyclic 3,4-dihydropyridin-2(1 H )-ones; similar ring systems may also be produced from the azadienes by N-acylation and radical cyclization.

Polymer-based amorphous solid dispersions (ASDs) comprise one of the most promising formulation strategies devised to improve the oral bioavailability of poorly water-soluble drugs. Exploitation of such systems in marketed products has been limited because of poor understanding of physical stability. The internal disordered structure and increased free energy provide a thermodynamic driving force for phase separation and recrystallization, which can compromise therapeutic efficacy and limit product shelf life. A primary concern in the development of stable ASDs is the solubility of the drug in the polymeric carrier, but there is a scarcity of reliable analytical techniques for its determination. In this work, terahertz (THz) Raman spectroscopy was introduced as a novel empirical approach to determine the saturated solubility of crystalline active pharmaceutical ingredient (API) in polymeric matrices directly during hot melt extrusion. The solubility of a model compound, paracetamol, in two polymer systems, Affinisol 15LV (HPMC) and Plasdone S630 (copovidone), was determined by monitoring the API structural phase transitions from crystalline to amorphous as an excess of crystalline drug dissolved in the polymeric matrix. THz-Raman results enabled construction of solubility phase diagrams and highlighted significant differences in the solubilization capacity of the two polymer systems. The maximum stable API-load was 20 wt % for Affinisol 15LV and 40 wt % for Plasdone S630. Differential scanning calorimetry and XRPD studies corroborated these results. This approach has demonstrated a novel capability to provide real-time API-polymer phase equilibria data in a manufacturing relevant environment and promising potential to predict solid-state solubility and physical stability of ASDs.

Intraneuronal aggregation of TDP-43 is seen in 97% of all amyotrophic lateral sclerosis cases and occurs by a poorly understood mechanism. We developed a simple in vitro model system for the study of full-length TDP-43 aggregation in solution and in protein droplets. We found that soluble, YFP-tagged full-length TDP-43 (yTDP-43) dimers can be produced by refolding in low-salt HEPES buffer; these solutions are stable for several weeks. We found that physiological electrolytes induced reversible aggregation of yTDP-43 into 10-50 nm tufted particles, without amyloid characteristics. The order of aggregation induction potency was K + < Na + < Mg 2+ < Ca 2+ , which is the reverse of the Hofmeister series. The kinetics of aggregation were fit to a single-step model, and the apparent rate of aggregation was affected by yTDP-43 and NaCl concentrations. While yTDP-43 alone did not form stable liquid droplets, it partitioned into preformed Ddx4N1 droplets, showing dynamic diffusion behavior consistent with liquid-liquid phase transition, but then aggregated over time. Aggregation of yTDP-43 in droplets also occurred rapidly in response to changes in electrolyte concentrations, mirroring solution behavior. This was accompanied by changes to droplet localization and solvent exchange. Exposure to extracellular-like electrolyte conditions caused rapid aggregation at the droplet periphery. The aggregation behavior of yTDP-43 is controlled by ion-specific effects that occur at physiological concentrations, suggesting a mechanistic role for local electrolyte concentrations in TDP-43 proteinopathies.

We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h-BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.

A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

Amorphous Cu x O nanoflakes with a thickness of 10-50 nm were synthesized through dye-assisted transformation of rhombic dodecahedral Cu 2 O nanocrystals using a facile solution process. The morphology evolution observed by electron microscopy is highly dependent on the reaction between the surface and the dye. The crystal grain shrinks during the process until the formation of a purely amorphous nanoflake. The amorphous Cu x O nanoflake consists of a combination of Cu(I) and Cu(II) with a ratio close to 1:1. It shows enhanced photocatalytic reactivity toward the degradation of methyl orange compared to that of rhombic dodecahedral Cu 2 O nanocrystals with all active (110):Cu facets. The chemical composition and architecture remain the same after repeating degradation tests. The high surface-to-volume ratio contributes to its superior photocatalytic performance, whereas its low surface energy, confirmed by density functional theory simulations, explains its improved stability. The nanoflakes also show the ability of degrading nitrobenzene effectively, thus demonstrating great promise as a highly stable and active photocatalyst for environmental applications., Competing Interests: The authors declare no competing financial interest.

NAD + has a central function in linking cellular metabolism to major cell-signaling and gene-regulation pathways. Defects in NAD + homeostasis underpin a wide range of diseases, including cancer, metabolic disorders, and aging. Although the beneficial effects of boosting NAD + on mitochondrial fitness, metabolism, and lifespan are well established, to date, no therapeutic enhancers of de novo NAD + biosynthesis have been reported. Herein we report the discovery of 3-[[[5-cyano-1,6-dihydro-6-oxo-4-(2-thienyl)-2-pyrimidinyl]thio]methyl]phenylacetic acid (TES-1025, 22), the first potent and selective inhibitor of human ACMSD (IC 50 = 0.013 μM) that increases NAD + levels in cellular systems. The results of physicochemical-property, ADME, and safety profiling, coupled with in vivo target-engagement studies, support the hypothesis that ACMSD inhibition increases de novo NAD + biosynthesis and position 22 as a first-class molecule for the evaluation of the therapeutic potential of ACMSD inhibition in treating disorders with perturbed NAD + supply or homeostasis.

In BRCA2-defective cells, poly(adenosine diphosphate [ADP]-ribose) polymerase inhibitors can trigger synthetic lethality, as two independent DNA-repairing mechanisms are simultaneously impaired. Here, we have pharmacologically induced synthetic lethality, which was triggered by combining two different small organic molecules. When administered with a BRCA2-Rad51 disruptor in nonmutant cells, Olaparib showed anticancer activity comparable to that shown when administered alone in BRCA2-defective cells. This strategy could represent an innovative approach to anticancer drug discovery and could be extended to other synthetic lethality pathways.

We investigate the interfacial chemistry between Fe catalyst foils and monolayer hexagonal boron nitride (h-BN) following chemical vapor deposition and during subsequent atmospheric exposure, using scanning electron microscopy, X-ray photoemission spectroscopy, and scanning photoelectron microscopy. We show that regions of the Fe surface covered by h-BN remain in a metallic state during exposure to moist air for ∼40 h at room temperature. This protection is attributed to the strong interfacial interaction between h-BN and Fe, which prevents the rapid intercalation of oxidizing species. Local Fe oxidation is observed on bare Fe regions and close to defects in the h-BN film (e.g., domain boundaries, wrinkles, and edges), which over the longer-term provide pathways for slow bulk oxidation of Fe. We further confirm that the interface between h-BN and metallic Fe can be recovered by vacuum annealing at ∼600 °C, although this is accompanied by the creation of defects within the h-BN film. We discuss the importance of these findings in the context of integrated manufacturing and transfer-free device integration of h-BN, particularly for technologically important applications where h-BN has potential as a tunnel barrier such as magnetic tunnel junctions.

Luminescent SiC x O y :H films, which are fabricated at different CH 4 flow rates using the plasma-enhanced chemical vapor deposition (PECVD) technique, exhibit strong photoluminescence (PL) with tuning from the near-infrared to orange regions. The PL features an excitation-wavelength-independent recombination dynamics. The silicon dangling bond (DB) defects identified by electron paramagnetic resonance spectra are found to play a key role in the PL behavior. The first-principles calculation shows that the Si DB defects introduce a midgap state in the band gap, which is in good agreement with the PL energy. Moreover, the band gap of a-SiC x O y :H is found to be mainly determined by Si and C atoms. Thus, the strong light emission is believed to result from the recombination of excited electrons and holes in Si DB defects, while the tunable light emission of the films is attributed to the substitution of stronger Si-C bonds for weak Si-Si bonds. It is also found that the light emission intensity shows a superlinear dependence on the pump intensity. Interestingly, the film exhibits a net optical gain under ultraviolet excitation. The gain coefficient is 53.5 cm -1 under a pumping power density of 553 mW cm -2 . The present results demonstrate that the SiC x O y system can be a very competitive candidate in the applications of photonics and optoelectronics.

This paper presents a flexible graphene/polyvinylidene difluoride (PVDF)/graphene sandwich for three-dimensional touch interactivity. Here, x-y plane touch is sensed using graphene capacitive elements, while force sensing in the z-direction is by a piezoelectric PVDF/graphene sandwich. By employing different frequency bands for the capacitive- and force-induced electrical signals, the two stimuli are detected simultaneously, achieving three-dimensional touch sensing. Static force sensing and elimination of propagated stress are achieved by augmenting the transient piezo output with the capacitive touch, thus overcoming the intrinsic inability of the piezoelectric material in detecting nontransient force signals and avoiding force touch mis-registration by propagated stress.

Heating a 2,5-furanocyclic (2-azidoethyl)allene initiates a cascade reaction comprising azide-allene cycloaddition, loss of nitrogen, and azatrimethylenemethane (ATMM) diyl-furan transannular (4 + 3)-cycloaddition. The major product of this reaction contains the pentacyclic core common to guanacastepenes D and H and radianspenes J-L; in addition, the central oxa-bridged cycloheptene ring, flanked by two carbocyclic rings, is structurally related to the ABC-ring system found in the cortistatins. This is the first reported synthetic application of a "free" (nonconjugated) ATMM. The cyclization precursors were prepared via the first reported examples of the Ireland-Claisen rearrangement of an ethynyl lactone.

Cu 2 O nanoparticles with controllable facets are of great significance for photocatalysis. In this work, the surface termination and facet orientation of Cu 2 O nanoparticles are accurately tuned by adjusting the amount of hydroxylamine hydrochloride and surfactant. It is found that Cu 2 O nanoparticles with Cu-terminated (110) or (111) surfaces show high photocatalytic activity, while other exposed facets show poor reactivity. Density functional theory simulations confirm that sodium dodecyl sulfate surfactant can lower the surface free energy of Cu-terminated surfaces, increase the density of exposed Cu atoms at the surfaces and thus benefit the photocatalytic activity. It also shows that the poor reactivity of the Cu-terminated Cu 2 O (100) surface is due to the high energy barrier of holes at the surface region.

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al2O3 film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.

The transition metal dichalcogenides (TMDs) are two-dimensional layered solids with van der Waals bonding between layers. We calculate their Schottky barrier heights (SBHs) using supercell models and density functional theory. It is found that the SBHs without defects are quite strongly pinned, with a pinning factor S of about S = 0.3, a similar value for both top and edge contact geometries. This arises because there is direct bonding between the contact metal atoms and the TMD chalcogen atoms, for both top and edge contact geometries, despite the weak interlayer bonding in the isolated materials. The Schottky barriers largely follow the metal induced gap state (MIGS) model, like those of three-dimensional semiconductors, despite the bonding in the TMDs being largely constrained within the layers. The pinning energies are found to be lower in the gap for edge contact geometries than for top contact geometries, which might be used to obtain p-type contacts on MoS2.

The long-term (>18 months) protection of Ni surfaces against oxidation under atmospheric conditions is demonstrated by coverage with single-layer graphene, formed by chemical vapor deposition. In situ, depth-resolved X-ray photoelectron spectroscopy of various graphene-coated transition metals reveals that a strong graphene-metal interaction is of key importance in achieving this long-term protection. This strong interaction prevents the rapid intercalation of oxidizing species at the graphene-metal interface and thus suppresses oxidation of the substrate surface. Furthermore, the ability of the substrate to locally form a passivating oxide close to defects or damaged regions in the graphene overlayer is critical in plugging these defects and preventing oxidation from proceeding through the bulk of the substrate. We thus provide a clear rationale for understanding the extent to which two-dimensional materials can protect different substrates and highlight the key implications for applications of these materials as barrier layers to prevent oxidation.

We dope nanotube forests using evaporated MoO3 and observe the forest resistivity to decrease by 2 orders of magnitude, reaching values as low as ∼5 × 10(-5) Ωcm, thus approaching that of copper. Using in situ photoemission spectroscopy, we determine the minimum necessary MoO3 thickness to dope a forest and study the underlying doping mechanism. Homogenous coating and tube compaction emerge as key factors for decreasing the forest resistivity. When all nanotubes are fully coated with MoO3 and packed, conduction channels are created both inside the nanotubes and on the outside oxide layer. This is supported by density functional theory calculations, which show a shift of the Fermi energy of the nanotubes and the conversion of the oxide into a layer of metallic character. MoO3 doping removes the need for chirality control during nanotube growth and represents a step forward toward the use of forests in next-generation electronics and in power cables or conductive polymers.

Effective passivation of interface defects in high-k metal oxide/Ge gate stacks is a longstanding goal of research on germanium metal-oxide-semiconductor devices. In this paper, we use photoelectron spectroscopy to probe the formation of a GeO2 interface layer between an atomic layer deposited Al2O3 gate dielectric and a Ge(100) substrate during forming gas anneal (FGA). Capacitance- and conductance-voltage data were used to extract the interface trap density energy distribution. These results show selective passivation of interface traps with energies in the top half of the Ge band gap under annealing conditions that produce GeO2 interface layer growth. First-principles modeling of Ge/GeO2 and Ge/GeO/GeO2 structures and calculations of the resulting partial density of states (PDOS) are in good agreement with the experiment results.

We grow dense carbon nanotube forests at 450 °C on Cu support using Co/Al/Mo multilayer catalyst. As a partial barrier layer for the diffusion of Co into Mo, we apply very thin Al layer with the nominal thickness of 0.50 nm between Co and Mo. This Al layer plays an important role in the growth of dense CNT forests, partially preventing the Co-Mo interaction. The forests have an average height of ∼300 nm and a mass density of 1.2 g cm(-3) with tubes exhibiting extremely narrow inner spacing. An ohmic behavior is confirmed between the forest and Cu support with the lowest resistance of ∼8 kΩ. The forest shows a high thermal effusivity of 1840 J s(-0.5) m(-2) K(-1), and a thermal conductivity of 4.0 J s(-1) m(-1) K(-1), suggesting that these forests are useful for heat dissipation devices.

We have systematically studied the macroscopic adhesive properties of vertically aligned nanotube arrays with various packing density and roughness. Using a tensile setup in shear and normal adhesion, we find that there exists a maximum packing density for nanotube arrays to have adhesive properties. Too highly packed tubes do not offer intertube space for tube bending and side-wall contact to surfaces, thus exhibiting no adhesive properties. Likewise, we also show that the surface roughness of the arrays strongly influences the adhesion properties and the reusability of the tubes. Increasing the surface roughness of the array strengthens the adhesion in the normal direction, but weakens it in the shear direction. Altogether, these results allow progress toward mimicking the gecko's vertical mobility.

We evaluate the growth kinetics and growth mechanism of ultrahigh mass density carbon nanotube forests. They are synthesized by chemical vapor deposition at 450 °C using a conductive Ti/Cu support and Co-Mo catalyst system. We find that Mo stabilizes Co particles preventing lift off during the initial growth stage, thus promoting the growth of ultrahigh mass density nanotube forests by the base growth mechanism. The morphology of the forest gradually changes with growth time, mostly because of a structural change of the catalyst particles. After 100 min growth, toward the bottom of the forest, the area density decreases from ∼ 3-6 × 10(11) cm(-2) to ∼ 5 × 10(10) cm(-2) and the mass density decreases from 1.6 to 0.38 g cm(-3). We also observe part of catalyst particles detached and embedded within nanotubes. The progressive detachment of catalyst particles results in the depletion of the catalyst metals on the substrate surfaces. This is one of the crucial reasons for growth termination and may apply to other catalyst systems where the same features are observed. Using the packed forest morphology, we demonstrate patterned forest growth with a pitch of ∼ 300 nm and a line width of ∼ 150 nm. This is one of the smallest patterning of the carbon nanotube forests to date.

We report on the successful integration of low-cost, conformal, and versatile atomic layer deposited (ALD) dielectric in Ni–Al2O3–Co magnetic tunnel junctions (MTJs) where the Ni is coated with a spin-filtering graphene membrane. The ALD tunnel barriers, as thin as 0.6 nm, are grown layer-by-layer in a simple, low-vacuum, ozone-based process, which yields high-quality electron-transport barriers as revealed by tunneling characterization. Even under these relaxed conditions, including air exposure of the interfaces, a significant tunnel magnetoresistance is measured highlighting the robustness of the process. The spin-filtering effect of graphene is enhanced, leading to an almost fully inversed spin polarization for the Ni electrode of −42%. This unlocks the potential of ALD for spintronics with conformal, layer-by-layer control of tunnel barriers in magnetic tunnel junctions toward low-cost fabrication and down-scaling of tunnel resistances.

The concept of co-catalytic layer structures for controlled laser-induced chemical vapor deposition of carbon nanotubes is established, in which a thin Ta support layer chemically aids the initial Fe catalyst reduction. This enables a significant reduction in laser power, preventing detrimental positive optical feedback and allowing improved growth control. Systematic study of experimental parameters combined with simple thermostatic modeling establishes general guidelines for the effective design of such catalyst/absorption layer combinations. Local growth of vertically aligned carbon nanotube forests directly on flexible polyimide substrates is demonstrated, opening up new routes for nanodevice design and fabrication.

The first total synthesis of pandamarilactone-1, an alkaloid of Pandanus amaryllifolius, is reported. The nine-step synthesis features furan oxidation with singlet oxygen and then spiro-N,O-acetalization and elimination to generate the natural product and further Pandanus alkaloids, pandamarilactonines A-D.