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We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS2 FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼10². The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO2 gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors. [ABSTRACT FROM AUTHOR]

Uridine 5′-diphosphate-5-fluorogalactopyranose (UDP-5F-Galp, 7) was synthesized, and its effect on UDP-Galp mutase (UGM) was investigated. UGM facilitated the hydrolysis of 7 to yield UDP and 5-oxogalactose (24), but no 11 was detected. 19F NMR and trapping experiments demonstrated that the reaction involves the initial formation of a substrate-cofactor adduct followed by decomposition of the resulting C5 gem-fluorohydrin to generate a 5-oxo intermediate (10). The results support the current mechanistic proposal for UGM and suggest new directions for designing mechanism-based inhibitors. [ABSTRACT FROM AUTHOR]

The article focuses on the transfer of a ketone group from S-adenosylmethionine (AdoMet or SAM)-dependent methyltransferases (MTases). It notes that the advancement of MTases functional analyses is hindered by small size methyl group and inert properties. It points out that keto-AdoMet extends the available toolbox for the interrogation of MTases biochemical functions.

Isoaspartate formation is a ubiquitous post-translation modification arising from spontaneous asparagine deamidation or aspartate isomerization. The formation of isoaspartate inserts a methylene group into the protein backbone, generating a "kink", and may drastically alter protein structure and function, thereby playing critical roles in a myriad of biological processes, human diseases, and protein pharmaceutical development. Herein, we report a chemo-enzymatic detection method for the isoaspartate protein, which in particular allows the affinity enrichment of isoaspartate-containing proteins. In the initial step, protein isoaspartate methyltransferase selectively converts isoaspartates into the corresponding methyl esters. Subsequently, the labile methyl ester is trapped by strong nucleophiles in aqueous solutions, such as hydrazines to form hydrazides. The stable hydrazide products can be analyzed by standard proteomic techniques, such as matrix-assisted laser desorption ionization and electrospray ionization mass spectrometry. Furthermore, the chemical trapping step allows us to introduce several tagging strategies for product identification and quantification, such as UV-vis and fluorescence detection through a dansyl derivative. Most significantly, the hydrazide product can be enriched by affinity chromatography using aldehyde resins, thus drastically reducing sample complexity. Our method hence represents the first technique for the affinity enrichment of isoaspartyl proteins and should be amendable to the systematic and comprehensive characterization of isoaspartate, particularly in complex systems. [ABSTRACT FROM AUTHOR]

Rapid (nanosecond-scale) electrical pulsing is used to study drift-velocity saturation in graphene field-effect devices. In these experiments, high-field pulses are utilized to drive graphene's carriers on time scales much faster than that on which energy loss to the underlying substrate can occur, thereby allowing the observation of the highest saturation velocities reported to date. In a dramatic departure from the behavior exhibited by conventional metals and semiconductors, as the electron or hole density is reduced toward the charge-neutrality point, the drift velocity is found to reach values comparable to the Fermi velocity itself. Corresponding current densities are as large as 109 A/cm², similar to the values reported for carbon nanotubes and for graphene-on-diamond transistors. In essence, our approach of rapid pulsing allows us to "free" graphene from the deleterious influence of its substrate, revealing a pathway to achieve the superior electrical performance promised by this material. The usefulness of this approach is not merely limited to graphene but should extend also to a broad variety of two-dimensional semiconductors. [ABSTRACT FROM AUTHOR]

Weinvestigate energy relaxation of hot carriers in monolayer and bilayergraphene devices, demonstrating that the relaxation rate increasessignificantly as the Dirac point is approached from either the conductionor valence band. This counterintuitive behavior appears consistentwith ideas of charge puddling under disorder, suggesting that it becomesvery difficult to excite carriers out of these localized regions.These results therefore demonstrate how the peculiar properties ofgraphene extend also to the behavior of its nonequilibrium carriers. [ABSTRACT FROM AUTHOR]