Fast Energy Relaxation of Hot Carriers Near the DiracPoint of Graphene.

Weinvestigate energy relaxation of hot carriers in monolayer and bilayergraphene devices, demonstrating that the relaxation rate increasessignificantly as the Dirac point is approached from either the conductionor valence band. This counterintuitive behavior appears consistentwith ideas of charge puddling under disorder, suggesting that it becomesvery difficult to excite carriers out of these localized regions.These results therefore demonstrate how the peculiar properties ofgraphene extend also to the behavior of its nonequilibrium carriers. [ABSTRACT FROM AUTHOR]