3 results on '"Thibaut Desrues"'
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2. Ex situ phosphorus doped polysilicon films by plasma immersion ion implantation (PIII): Controlling and simplifying passivated contacts integration
- Author
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Sébastien Dubois, Quentin Rafhay, Thibaut Desrues, Audrey Morisset, Antoine Veau, Laurent Roux, Anne Kaminski-Cachopo, and Frank Torregrosa
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Materials science ,Silicon ,Passivation ,Electron concentration ,Analytical chemistry ,Oxide ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Layer thickness ,Plasma-immersion ion implantation ,0104 chemical sciences ,Ion ,chemistry.chemical_compound ,Phosphorus doped ,chemistry ,0210 nano-technology - Abstract
We report on the relevance of using Plasma Immersion Ion Implantation (PIII) technology for a simple and controlled Phosphorus doping process of polysilicon-based passivated contacts in high efficiency silicon solar cells. Three different ion doses were tested on polysilicon (poly-Si) layers (40 nm thick) / tunnel oxide stacks to study the influence of this parameter on the electron concentration and surface passivation properties. Excellent i-Voc of 732 mV and J0 = 4.1 fA.cm-2 were obtained for hydrogenated poly-Si (n+)/SiO2 structures on polished c-Si substrates after a firing step. For thinner poly-Si films (from 7 nm to 26 nm), only one ion dose was tested resulting in a slight decrease of the passivation levels with the layer thickness. Encouraging values of i-Voc = 700 mV and J0 ∼ 22 fA.cm−2 were also obtained for∼16 nm of poly-Si (n+) on textured c-Si substrates.
- Published
- 2019
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3. TCO contacts on poly-Si layers: High and low temperature approaches to maintain passivation and contact properties
- Author
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Elise Bruhat, Thibaut Desrues, D. Blanc-Pélissier, Sébastien Dubois, Raphaël Cabal, Benoit Martel, Département des Technologies Solaires (DTS), Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), INL - Ingénierie et conversion de lumière (i-Lum) (INL - I-Lum), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Dubois S., Glunz S., Verlinden P., Rolf B., Weeber A., Hahn G., Poortmans M., Ballif C., and ANR-17-CE05-0035,SunSTONE,Réseaux de chaleur solaires intelligents avec stockage intersaisonnier(2017)
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Materials science ,Silicon ,Passivation ,Open-circuit voltage ,Annealing (metallurgy) ,business.industry ,020209 energy ,Energy conversion efficiency ,chemistry.chemical_element ,02 engineering and technology ,Conductivity ,021001 nanoscience & nanotechnology ,7. Clean energy ,Indium tin oxide ,chemistry ,Electrical resistivity and conductivity ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,0210 nano-technology ,business - Abstract
International audience; Polysilicon (poly-Si) based passivating contacts are promising to improve silicon solar cells conversion efficiency. Thin poly-Si layers usually feature high sheet resistances compared to conventional diffused junctions. Therefore the use of Transparent Conductive Oxides (TCO) has to be considered to improve lateral conductivity while maintaining good optical and surface passivation properties. Standard sputtered Indium Tin Oxide (ITO) can alter the poly-Si passivation properties. In this work different TCO-based contacts have been investigated (various materials and deposition techniques) in order to contact phosphorus-doped poly-Si layers (n+ poly-Si). The TCO-deposited samples experienced both low and high temperature annealing steps. Implied open circuit voltage above 730 mV and contact resistivity below 50 mΩ.cm2 at the TCO/n+ poly-Si interface have been obtained for both high and low temperature approaches. Thus such novel structures are very promising to contact poly-Si layers.
- Published
- 2019
- Full Text
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