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The theoretical calculations for the diode quality factor n for a metal‐insulator‐n‐semiconductor solar cell under illumination are presented here. These calculations show that, under illumination, n increases with increasing d and decreases slightly for d>18 A at JL =36 mA cm−2. Results of the calculations compare well with experimental results observed by H. C. Card [Solid‐State Electron. 20, 971 (1977)]. more...

The theoretical calculations for the diode quality factor ‘‘n’’ for a metal‐insulator‐n‐semiconductor solar cell in the dark are presented here by taking proper account of the effective mass for the holes. These calculations show that in the dark the diode quality factor ‘‘n’’ increases with increasing insulator layer thickness ‘‘d.’’ Results of the calculations agree well with experimental values observed by Card [Solid State Electron. 20, 971 (1977)]. more...

A one‐dimensional model proposed by Garrett has been used to explain the electro‐optic susceptibility reported by Pursey et al. It has been demonstrated that the electronic contribution to the anharmonicity is in itself sufficient to explain satisfactorily the data of Pursey et al. more...