Change in the diode quality factor with insulator layer thickness in a metal‐insulator‐n‐semiconductor solar cell

The theoretical calculations for the diode quality factor n for a metal‐insulator‐n‐semiconductor solar cell under illumination are presented here. These calculations show that, under illumination, n increases with increasing d and decreases slightly for d>18 A at JL =36 mA cm−2. Results of the calculations compare well with experimental results observed by H. C. Card [Solid‐State Electron. 20, 971 (1977)].