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We explore the InSb-semiconductor lattice dynamics after excitation of high density electron-hole plasma with an ultrashort and intense laser pulse. By using time resolved x-ray diffraction, a sub-mÅ and sub-ps resolution was achieved. Thus, a strain of 4% was measured in a 3 nm thin surface layer 2 ps after excitation. The lattice strain was observed for the first 5 ps as exponentially decaying, changing rapidly by time and by depth. The observed phenomena can only be understood assuming nonlinear time dependent laser absorption where the absorption depth decreases by a factor of twenty compared to linear absorption.

We have measured the polarization purity of undulator radiation at 12.9 keV, with hitherto unachievable precision. We could measure a polarization purity of 1.8 × 10−4 by using a silicon channel-cut crystal with six Bragg reflections at 45° as analyzer.

Hot electron generation plays an important role in the fast ignition approach to inertial confinement fusion (ICF) and other applications with ultra-intense lasers. Hot electrons of temperature up to 10–20 MeV have been produced by high contrast picosecond duration laser pulses focussed to intensities of ∼1020 W cm−2 with a deliberate pre-pulse on solid targets using the Vulcan Petawatt Laser facility. We present measurements of the number and temperature of hot electrons obtained using an electron spectrometer. The results are correlated to the density scale length of the plasma produced by a controlled pre-pulse measured using an optical probe diagnostic. 1D simulations predict electron temperature variations with plasma density scale length in agreement with the experiment at shorter plasma scale lengths (

We demonstrate that an ultrashort-pulse laser-driven x-ray diode can be used for time-resolved experiments on a picosecond timescale. Hence, acoustical phonons in germanium are observed after ultrashort laser-excitation and the results are compared with calculations according to a microphysical model. We also show the advantages of this kind of picosecond x-ray source compared to other sources on the basis of its properties.

In this Note we report on the characterization of a “deep depletion” charge-coupled device (CCD) in the keV range. Measurement of quantum efficiency for different energies from 4.5 until 27keV is given. A measurement of the capability of the CCD to detect single photons is also reported together with a determination of the spatial and spectral resolution. A Monte Carlo simulation was used to give a quantitative comparison with the measured spatial resolution.