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23 results on '"Spiga S"'

15. Band alignment at the La2Hf2O7∕(001)Si interface

Author

Seguini, G., primary, Spiga, S., additional, Bonera, E., additional, Fanciulli, M., additional, Reyes Huamantinco, A., additional, Först, C. J., additional, Ashman, C. R., additional, Blöchl, P. E., additional, Dimoulas, A., additional, and Mavrou, G., additional

Published
2006
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19. Atomic-layer deposition of Lu2O3

Author

Scarel, G., primary, Bonera, E., additional, Wiemer, C., additional, Tallarida, G., additional, Spiga, S., additional, Fanciulli, M., additional, Fedushkin, I. L., additional, Schumann, H., additional, Lebedinskii, Yu., additional, and Zenkevich, A., additional

Published
2004
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22. Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition

Author

Sabina Spiga, Marco Fanciulli, Alessandro Molle, Molle, A, Spiga, S, and Fanciulli, M

Subjects
Moisture, Chemistry, SURFACES, Analytical chemistry, General Physics and Astronomy, OXIDATION, GERMANIUM, Ambient air, Germanium compounds, SUBSTRATE, DIELECTRICS, Vacuum deposition, Atomic oxygen, Deposition (phase transition), Physical and Theoretical Chemistry, Germanium, Interface, GeO2, FIS/03 - FISICA DELLA MATERIA, Stoichiometry
Abstract

The composition of GeO2 films grown on Ge has been studied for different molecular deposition processes and after exposure to ambient air. The stoichiometry, the interaction with moisture, and the interfacial details of the films are shown to be dramatically process dependent. (c) 2008 American Institute of Physics.

Published
2008
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23. Band alignment at the La2Hf2O7∕(001)Si interface

Author

A. Dimoulas, Clemens J. Först, A. Reyes Huamantinco, G. Mavrou, Emiliano Bonera, Sabina Spiga, Christopher R. Ashman, Marco Fanciulli, Peter E. Blöchl, Gabriele Seguini, Seguini, G, Spiga, S, Bonera, E, Fanciulli, M, Huamantinco, A, Forst, C, Ashman, C, Blochl, P, Dimoulas, A, and Mavrou, G

Subjects
SPECTROSCOPY, Materials science, Physics and Astronomy (miscellaneous), Silicon, business.industry, Band gap, La2Hf2O7, internal-photoemission spectroscopy, OXIDE, chemistry.chemical_element, Semimetal, Band offset, SI(001), Band bending, DIELECTRICS, chemistry, Computational chemistry, Band diagram, Optoelectronics, Direct and indirect band gaps, SILICON, business, Quasi Fermi level
Abstract

In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2 Hf2 O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1 eV band gap of La2 Hf2 O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1 eV and a conduction band offset of 2.1±0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV. © 2006 American Institute of Physics.

Published
2006
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