Band alignment at the La2Hf2O7∕(001)Si interface

Authors :: A. Dimoulas
Clemens J. Först
A. Reyes Huamantinco
G. Mavrou
Emiliano Bonera
Sabina Spiga
Christopher R. Ashman
Marco Fanciulli
Peter E. Blöchl
Gabriele Seguini
Seguini, G
Spiga, S
Bonera, E
Fanciulli, M
Huamantinco, A
Forst, C
Ashman, C
Blochl, P
Dimoulas, A
Mavrou, G
Source :: Applied physics letters 88 (2006): 202903-1–202903-3. doi:10.1063/1.2204572, info:cnr-pdr/source/autori:Seguini, G; Spiga, S; Bonera, E; Fanciulli, M; Huamantinco, AR; Forst, CJ; Ashman, CR; Blochl, PE; Dimoulas, A; Mavrou, G/titolo:Band alignment at the La2Hf2O7%2F(001)Si interface/doi:10.1063%2F1.2204572/rivista:Applied physics letters/anno:2006/pagina_da:202903-1/pagina_a:202903-3/intervallo_pagine:202903-1–202903-3/volume:88
Publication Year :: 2006
Publisher :: AIP Publishing, 2006.
Abstract: In the perspective of exploring alternative gate dielectrics for the future generation of microelectronic devices, we investigated experimentally and theoretically the interface energy barriers induced on (001) silicon by La2 Hf2 O7, whose growth has been recently attained by molecular-beam epitaxy. Experimental results show that the 5.6±0.1 eV band gap of La2 Hf2 O7 is aligned to the band gap of silicon with a valence band offset of 2.4±0.1 eV and a conduction band offset of 2.1±0.1 eV. Density functional theory calculations yield valence band offset values ranging between 1.8 and 2.4 eV. © 2006 American Institute of Physics.