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2. Effect of incomplete ionization for the description of highly aluminum-doped silicon

Author

Michael Rauer, Marc Rüdiger, Martin Hermle, Christian Schmiga, and Publica

Subjects
inorganic chemicals, Materials science, Silicon, Herstellung und Analyse von hocheffizienten Solarzellen, Messtechnik und Produktionskontrolle, General Physics and Astronomy, chemistry.chemical_element, Saturation current, Aluminium, Condensed Matter::Superconductivity, Ionization, Dotierung und Diffusion, Charakterisierung, Kontaktierung und Strukturierung, Solarzellen - Entwicklung und Charakterisierung, Range (particle radiation), Doping, technology, industry, and agriculture, Silicium-Photovoltaik, chemistry, lipids (amino acids, peptides, and proteins), Condensed Matter::Strongly Correlated Electrons, Atomic physics, Zellen und Module, human activities, Current density, Recombination
Abstract

In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon, leading to excellent agreement of numerical and experimental data within a broad range. We analyze the influence of different recombination mechanisms on the saturation current densities of Al-doped Si surfaces for different Al profiles. Lateral doping inhomogeneities and the effect of incomplete ionization have been examined in detail. We demonstrate that incomplete ionization affects the profile characteristics significantly and, therefore, has to be accounted for in accurate modeling of highly Al-doped silicon.

Published
2011

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