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Effect of incomplete ionization for the description of highly aluminum-doped silicon
- Source :
- Journal of Applied Physics. 110:024508
- Publication Year :
- 2011
- Publisher :
- AIP Publishing, 2011.
-
Abstract
- In this study we present an advanced method for precise modeling of highly aluminum-doped p+ silicon, leading to excellent agreement of numerical and experimental data within a broad range. We analyze the influence of different recombination mechanisms on the saturation current densities of Al-doped Si surfaces for different Al profiles. Lateral doping inhomogeneities and the effect of incomplete ionization have been examined in detail. We demonstrate that incomplete ionization affects the profile characteristics significantly and, therefore, has to be accounted for in accurate modeling of highly Al-doped silicon.
- Subjects :
- inorganic chemicals
Materials science
Silicon
Herstellung und Analyse von hocheffizienten Solarzellen
Messtechnik und Produktionskontrolle
General Physics and Astronomy
chemistry.chemical_element
Saturation current
Aluminium
Condensed Matter::Superconductivity
Ionization
Dotierung und Diffusion
Charakterisierung
Kontaktierung und Strukturierung
Solarzellen - Entwicklung und Charakterisierung
Range (particle radiation)
Doping
technology, industry, and agriculture
Silicium-Photovoltaik
chemistry
lipids (amino acids, peptides, and proteins)
Condensed Matter::Strongly Correlated Electrons
Atomic physics
Zellen und Module
human activities
Current density
Recombination
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 110
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....41c6e1c91049cabb77638f982dd5e2d7