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Imaging of buried epitaxial InAs QDs as well as thin films of PbS QDs was carried out by means of local photocurrent measurements using a conductive atomic force microscope. InAs dots appear as dark areas in the photocurrent map and PbS:PCBM thin films form domain‐like structures showing enhanced photoactivity.

In our previous work we showed that a reproducible monotonic relation between Scanning Capacitance Microscopy (SCM) signal and the sample doping is obtained under appropriate SCM operating conditions. In this work, we quantitatively determine the two‐dimensional carrier distribution of an n‐type ion‐implanted collector region of an industrial transistor sample. As the structures were large enough so that tip geometry effects could be neglected, the SCM data were converted into a two‐dimensional doping distribution via a simple lookup table, which was generated from a one‐dimensional doping profile measured on a reference wafer. In case the depth distribution of carriers is unknown, we show that the lookup table can also be calculated and a calibration can be carried out using e.g. the substrate doping as reference point.