Calibrated Scanning Capacitance Microscopy for Two-Dimensional Carrier Mapping of n-type Implants in p-doped Si-Wafers

In our previous work we showed that a reproducible monotonic relation between Scanning Capacitance Microscopy (SCM) signal and the sample doping is obtained under appropriate SCM operating conditions. In this work, we quantitatively determine the two‐dimensional carrier distribution of an n‐type ion‐implanted collector region of an industrial transistor sample. As the structures were large enough so that tip geometry effects could be neglected, the SCM data were converted into a two‐dimensional doping distribution via a simple lookup table, which was generated from a one‐dimensional doping profile measured on a reference wafer. In case the depth distribution of carriers is unknown, we show that the lookup table can also be calculated and a calibration can be carried out using e.g. the substrate doping as reference point.