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Noise spectra were measured on CBE grown InP samples in the frequency range from 1 Hz to 104 kHz at temperatures from 77 to 500 K. The experimental results show that llfnoise stems from the lattice scattering. The 1/f noise in InP is well characterised by a parameter CtL~,, in this temperature range. The temperature dependence of ~tLat, was determined experimentally. Assuming that the number of phonons in a mode fluctuates with a 1/f spectrum, we are able to derive a theoretical expression for ~Latt in terms of the contributions by the acoustic phonons and the polar optical phonons. At low temperatures (

A theoretical treatment is given of number fluctuations induced by mobility fluctuations in the intrinsic region of a p-i-n diode. Mobility fluctuations lead to fluctuations in voltage across the intrinsic region. In the a.c. short-circuit situation, fluctuations across the intrinsic region result in voltage fluctuations across the two space-charge regions and consequently in the number of injected carriers. This coupling between mobility and carrier concentrations is found to be very weak for diodes with a short intrinsic region. The conclusion arrived at is that number fluctuations induced by mobility fluctuations in the active region of a diode laser can be neglected.

Elektrische geleiding vertoont in het algemeen 1/f-ruis. Deze veel voorkomende en onbegrepen vorm van ruis is in halfgeleiders vaak intensief. Een aantal experimentele feiten staan vast. Deze kunnen samengevat worden in een empirische relatie voor de grootte van de ruis. Er zijn experimenten ontworpen die tot de conclusie leiden dat het de beweeglijkheid van de vrije ladingdragers is die ruist, en niet het aantal. Andere experimenten hebben aangetoond, dat de bron van de ruis in de beweeglijkheid gezocht moet worden in de verstrooiing door het rooster.