Low-frequency noise in electron irradiated n-GaAs epitaxial layers

Authors :: Ren, L.
bacour, P.
Hooge, F.N.
Luthjens, L.H.
Lejis, M.R.
Source :: Journal of Applied Physics. March 1, 1993, Vol. 73 Issue 5, p2180, 7 p.
Publication Year :: 1993
Abstract: Low-frequency noise in electron irradiated n-GaAs layers grown by molecular beam epitaxy was investigated. The results showed that both 1/f and generation-reombination noise were present. The noise was attributed to a yet-unknown deep level brought about by electron irradiation 0.18 eV below the conduction band. The capture cross section was very small and thermally activated.