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A comprehensive quantum anisotropic transport model for holes is used to study silicon PMOS inversion layer transport under arbitrary stress. The results have shown that the hole band structure is dominated by 12 'wings,' where mechanical stress, as well as the vertical field under certain stress conditions, alter the energies of the few lowest hole subbands, changing the transport effective mass, density-of-states, and scattering rates, and thus affecting the mobility.

This paper describes the development of real-time control technology for the improvement of manufacturing characteristics of reactive ion etchers. A general control strategy is presented. The principal ideas are to sense key plasma parameters, develop a dynamic input - output model for the subsystem connecting the equipment inputs to the key plasma variables, and design and implement a multivariable control system to control these variables. Experimental results show that this approach to closed-loop control leads to a much more stable etch rate in the presence of a variety of disturbances as compared to current industrial practice.

A comprehensive quantum anisotropic transport model for holes was used to study silicon PMOS inversion layer transport under arbitrary stress. The anisotropic band structures of bulk silicon and silicon under field confinement as a two-dimensional quantum gas are computed using the pseudopotential method and a six-band stress-dependent k.p Hamiltonian. Anisotropic scattering is included in the momentum-dependent scattering rate calculation. Mobility is obtained from the Kubo-Greenwood formula at low lateral field and from the fullband Monte Carlo simulation at high lateral field. Using these methods, a comprehensive study has been performed for both uniaxial and biaxial stresses. The results are compared with device bending data and piezoresistance data for uniaxial stress, and device data from strained Si channel on relaxed SiGe substrate devices for biaxial tensile stress. All comparisons show a very good agreement with simulation. It is found that the hole band structure is dominated by 12 ‘wings,’ where mechanical stress, as well as the vertical field under certain stress conditions, can alter the energies of the few lowest hole subbands, changing the transport effective mass, density-of-states, and scattering rates, and thus affecting the mobility. [ABSTRACT FROM AUTHOR]

Presents experimental results that provide insight to damage generation and annealing processes involved in ion implantation. Transient enhanced diffusion across multiple anneals; Dopant redistribution and solubility effects; Practical modeling approaches to support technology development.