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4. Contributor contact details

Author

Ostroverkhova, O., primary, Shirota, Y., additional, Kageyama, H., additional, Puniredd, S.R., additional, Pisula, W., additional, Müllen, K., additional, Leo, K., additional, Hummert, M., additional, Kishida, H., additional, Yamamoto, T., additional, Biaggio, I., additional, Jazbinsek, M., additional, Günter, P., additional, Sancho-Garcia, J.C., additional, Godlewski, J., additional, Obarowska, M., additional, Perez-Moreno, J., additional, Vardeny, Z.V., additional, Sheng, C.-X., additional, Diesinger, H., additional, Chan, E.A., additional, Yin, J., additional, Soci, C., additional, Jurchescu, O.D., additional, Pivrikas, A., additional, Willets, K., additional, Mayer, K., additional, Singer, K.D., additional, Wu, Y., additional, Hösel, M., additional, Angmo, D., additional, Krebs, F.C., additional, Schwab, T., additional, Lüssem, B., additional, Furno, M., additional, Gather, M.C., additional, Nguyen, T.D., additional, Ehrenfreund, E., additional, Katz, H.E., additional, Dawidczyk, T.J., additional, Kong, H., additional, Tarabella, G., additional, Coppedè, N., additional, Iannotta, S., additional, Cicoira, F., additional, Kumar, P., additional, Santato, C., additional, Petty, M.C., additional, Oszajca, M., additional, Podborska, A., additional, Szaciłowski, K., additional, Thomas, J., additional, Norwood, R.A., additional, DeRose, C.T., additional, Greenlee, C., additional, and Yeniay, A., additional

Published
2013
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8. Cross-talk artefacts in Kelvin probe force microscopy imaging: A comprehensive study.

Author

Barbet, S., Popoff, M., Diesinger, H., Deresmes, D., Théron, D., and Mélin, T.

Subjects
ANTIQUITIES, KELVIN probe force microscopy, CANTILEVERS, BIOLOGICAL crosstalk, TOBACCO mosaic virus
Abstract

We provide in this article a comprehensive study of the role of ac cross-talk effects in Kelvin Probe Force Microscopy (KPFM), and their consequences onto KPFM imaging. The dependence of KPFM signals upon internal parameters such as the cantilever excitation frequency and the projection angle of the KPFM feedback loop is reviewed, and compared with an analytical model. We show that ac cross-talks affect the measured KPFM signals as a function of the tip-substrate distance, and thus hamper the measurement of three-dimensional KPFM signals. The influence of ac cross-talks is also demonstrated onto KPFM images, in the form of topography footprints onto KPFM images, especially in the constant distance (lift) imaging mode. Our analysis is applied to unambiguously probe charging effects in tobacco mosaic viruses (TMVs) in ambient air. TMVs are demonstrated to be electrically neutral when deposited on silicon dioxide surfaces, but inhomogeneously negatively charged when deposited on a gold surface. [ABSTRACT FROM AUTHOR]

Published
2014
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9. Charging and discharging processes of carbon nanotubes probed by electrostatic force microscopy.

Author

Zdrojek, M., Mélin, T., Diesinger, H., Stiévenard, D., Gebicki, W., and Adamowicz, L.

Subjects
NANOTUBES, FULLERENES, NANOSTRUCTURED materials, CARBON, PHYSICS
Abstract

Electrostatic properties of individually separated single-walled carbon nanotubes (SWCNTs), double-walled carbon nanotubes (DWCNTs), and multiwalled carbon nanotubes (MWCNTs) deposited on insulating layers have been investigated by charge injection and electric force microscopy (EFM) experiments. Delocalized charge patterns are observed along the CNTs upon local injection from the EFM tip, corresponding to (i) charge storage in the nanotubes and to (ii) charge trapping in the oxide layer along the nanotubes. The two effects are dissociated easily for CNTs showing abrupt discharge processes in which the charge stored in the CNT are field emitted back to the EFM tip, while trapped oxide charge can subsequently be imaged by EFM, clearly revealing field-enhancement patterns at the CNT caps. The case of continuous discharge processes of SWCNTs, DWCNTs, and MWCNTs is discussed, as well as the evolution of the discharge time constants with respect to the nanotube diameter. [ABSTRACT FROM AUTHOR]

Published
2006
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11. Submicron nickel deposition on silicon from an electrolytic solution controlled by near-field optics

Author

Diesinger, H., Bsiesy, A., and Herino, R.

Subjects
Scanning tunneling microscopy -- Usage, Silicon -- Research, Nickel compounds -- Research, Physics
Abstract

The application of near-field optical device to the electrochemical deposition of submicron nickel dots on silicon is demonstrated. A two-dimensional carrier diffusion model is used to describe the effect of the lateral diffusion of the photogenerated carriers on the form of the deposited nickel dots.

Published
2001

12. Conducting AFM study of colloidal nanoparticle assemblies

Author

BIAYE, M., Diesinger, H., Decorde, Nicolas, Grisolia, Jérémie, Ressier, Laurence, Melin, Thierry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2014

14. Ultrafast charge carrier dynamics in conjugated polymer

Author

Diesinger, H., Chan, E., Yin, J., Soci, C., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Ostroverkhova O.

Published
2013

15. Mesure du potentiel de surface d'un matériau

Author

Melin, Thierry, Theron, D., Barbet, S., Deresmes, D., Diesinger, H., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

n° de priorité : FR20100000624 20100215 ; également publié en tant que : WO2011098720 (A1) 2011-08-18 ; FR2956484 (B1) 2012-04-20 ; US2012304342 (A1) 2012-11-29 ; EP2537037 (A1) 2012-12-26

Published
2011

16. Kelvin probe force microscopy of charge transfer mechanisms from doped silicon nanocrystals

Author

Borowik, L., Kusiaku, K., Deresmes, D., Théron, D., Diesinger, H., Melin, Thierry, Nguyen-Tran, T., Roca I Cabarrocas, Pere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; The introduction of impurities in semiconductor nanocrystals is of fundamental interest to control their optical, electrical and magnetic properties[1]. Doping is essential to basically enhance electrical conductivity, and to build functional devices. This issue becomes of prime interest at the nanoscale for e.g. self-assembled devices based on organic, molecular or inorganic nanostructures, for which the control of doping can be either technologically difficult during the synthesis, and strongly depend on the environment, as in the case of carbon nanotubes[2] or physically limited, as in the case of silicon nanowires for which internal doping becomes unefficient due to dielectric screening[3].In this presentation, we investigate using ultra-high vacuum non-contact atomic force microscopy and Kelvin probe force microscopy (KFM) the possibility of using doped nanocrystals as electron sources to perform external remote doping of nanostructures and nanodevices. The focus is here to study the mechanisms of charge transfer from nanocrystals at the scale of the individual nanocrystals. To do so, we study the charge transfer from hydrogen-passivated phosphorus-doped[4] silicon nanocrystals towards silicon substrates by means of amplitude-modulation KFM. From the measurement of the electrostatic potential of ionized nanocrystals, we demonstrate that the nanocrystal doping (i) provides an internal passivation of the nanocrystal surface states and (ii) induces a charge transfer following an energy compensation mechanism similar to remote doping, but strongly enhanced by quantum confinement. Results provide a direct measurement of the nanocrystal band-gap opening induced by quantum confinement in the 2-50nm range[5], in agreement with parametrized tight-binding calculations. They also put forward the possibility of using doped nanocrystals to achieve controlled external remote doping of nanostructures and nanodevices, with expected two-dimensional charge densities in the range of 10^11-10^14 cm-2, or linear charge densities in the range of 10^5-10^7 cm-1.References: [1] For a recent review, see: D.J. Norris, A. L. Efros, S. C. Erwin, Science 319,776-1779 (2008) ; S. C. Erwin, L. Zu, M. I. Haftel, A. L. Efros, T. A. Kennedy, and D. J. Norris, Nature 36,91 (2005).; D. Yu, C.J. Wang, and P. Guyot-Sionnest, Science 300, 1277 (2003).[2] V. Derycke, R. Martel, J. Appenzeller, and Ph. Avouris, Appl. Phys. Lett. 80, 2773 (2002).[3] M. T. Bjork, H. Schmid, J. Knoch, H. Riel, W. Riess, Nature Nanotechnology 4, 103-107 (2009); M. Diarra, Y. M. Niquet, C. Delerue, and G. Allan, Phys. Rev. B 75, 045301 (2007).[4] A. R. Stegner, R. N. Pereira, K. Klein, R. Lechner, R. Dietmueller, M. S. Brandt, M. Stutzmann and H. Wiggers, Phys. Rev. Lett. 100, 026803 (2008).[5] L. Borowik, K. Kusiaku, D. Théron, D. Deresmes, H. Diesinger, T. Mélin, T. Nguyen-Tran, P. Roca i Cabarrocas (submitted to Phys. Rev. Lett.)

Published
2009

17. Comportement dynamique de microscopie Kelvin en mode AM sous ultravide

Author

Diesinger, H., Deresmes, D., Nys, J.P., Melin, Thierry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

18. Electrostatic properties of doped silicon nanocrystals probed by Kelvin force microscopy

Author

Borowik, L., Kusiaku, K., Theron, D., Diesinger, H., Deresmes, D., Melin, Thierry, Nguyen-Tran, T., Roca I Cabarrocas, Pere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2009

19. Charge transfer from doped silicon nanocrystals

Author

Borowik, L., Kusiaku, K., Theron, D., Diesinger, H., Deresmes, D., Melin, Thierry, Nguyen-Tran, T., Roca I Cabarrocas, Pere, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), and École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2009

20. Optimisation de la réponse fréquentielle des montages KFM et exemples d'application à des dispositifs à nanotube de carbone

Author

Diesinger, H., Deresmes, D., Brunel, D., Borovic, L., Hourlier, D., Melin, Thierry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2008

21. Scanning-probe measurements on undoped silicon nanowires

Author

Borowik, L., Diesinger, H., Hourlier, D., Melin, Thierry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2008

22. Kelvin force microscopy on GaN wide gap materials

Author

Barbet, S., Aubry, R., Deresmes, D., Poisson, M.A., Diesinger, H., Melin, Thierry, Theron, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Alcatel-Thalès III-V lab (III-V Lab), and THALES [France]-ALCATEL

Subjects
[SPI]Engineering Sciences [physics]
Abstract

Kelvin Force Microscopy (KFM) [1] enables to probe the contact potential difference between two materials, which is related to physical quantities such as work function differences and/or surface states. We address in this contribution the issue of quantitative measurements of such physical quantities using KFM in the case of GaN wide-gap materials. We will first focus on the z-spectroscopy of KFM measurements performed by nullifying the oscillation amplitude of the cantilever when the tip-surface capacitance is submitted to an electrostatic excitation at the cantilever resonance frequency. Even on metallic layers, an unexpected asymmetry of the V(z) curves (surface potential versus tip-substrate distance) can be observed experimentally, depending whether the electrostatic excitation is applied to the tip or to the substrate. This effect is demonstrated to originate in instrumental capacitive cross talks between the electrostatic excitation and the microscope photodiode signals. When suppressing these cross-talks, artefact free V(z) curves can be measured. Their monotonous variation at the scale of a few hundred of nanometers is interpreted in terms of contaminants forming a surface dipolar layer at the sample and tip.The scheme has been applied in a second step to n and p-type GaN layers grown by MOCVD on a (0001) sapphire substrate [2]. The n-type GaN (respectively p-type GaN) is doped by Si (Mg) with an effective doping level of 1.6e19 cm−3 (1e16 cm−3). To get a potential reference for KFM measurements, ohmic contacts on n-type GaN (resp. p-type GaN) were achieved using Ti/Al (resp. Ni/Au) metallization layers with thickness 20/200 nm (resp. 50/100 nm), followed by a Au thickening. Experiments show that the contact potential difference between n- and p-type GaN is ~0.8V. The lower value compared to GaN band-gap (3.4 eV) is attributed to surface-state induced band-bending at the oxidized GaN surface. This interpretation will be compared with transport experiments using conducting atomic force microscopy in the 150K-500K range.Finally, KFM experiments will be shown on AlGaN/GaN high-electron mobility transistor devices [4]. Surface potential maps here strongly depend on parasitic capacitive couplings between the cantilever and the device, which occur at the scale of a few tens of µm. In order to get quantitative measurements of surface potentials (and thus of charge distributions between source and drain contacts), the purpose is here to measure the transfer function of the tip-cantilever probe and use it as a deconvolution of experimental KFM images.[1] M. Nonnenmacher et al, Appl.Phy.Lett., 58,25,2921-2923 (1991).[2] M.A.di Forte-Poisson et al., Phys.Stat.Sol. (a), 203, 1, 185-193 (2006).[3] H.O.Jacobs et al., J. Appl.Phys., 84, 3, 1168-1173 (1998).[4] G.Koley et al., IEEE Transactions on Electron Devices, 50, 4, 886–893 (2003).

Published
2007

23. Kelvin force microscopy frequency response optimization and application to nanowire/nanotube devices under polarization

Author

Diesinger, H., Hourlier, D., Brunel, D., Deresmes, D., Nys, J.P., Melin, Thierry, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience

Published
2007

24. Assemblage de nano-objets par diélectrophorèse

Author

Diesinger, H., Marczak, M., Luxembourg, D., Coffinier, Y., Hourlier, D., Melin, Thierry, Tilmant, P., Stievenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2006

25. Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : an analytical model for quantitative charge imaging

Author

Melin, Thierry, Diesinger, H., Deresmes, D., Stievenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2004

26. Injection contrôlée de charges dans des nanoparticules individuelles de silicium

Author

Diesinger, H., Melin, Thierry, Deresmes, D., Stievenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2003

27. Electric force microscopy of individually charged semiconductor nanoparticles on conductive substrates : quantitative charge measurements and dipole-dipole interactions

Author

Melin, Thierry, Diesinger, H., Deresmes, D., Stiévenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2003

28. Un modèle analytique et quantitatif pour la microscopie à force électrique de nanoparticules chargées sur substrats conducteurs

Author

Melin, Thierry, Diesinger, H., Deresmes, D., Stievenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2003

29. Controlled charge injection in semiconductor nanoparticles

Author

Diesinger, H., Melin, Thierry, Deresmes, D., Stiévenard, D., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2003

30. Fundamental studies in nanosciences at the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN)

Author

Allan, G., Barbet, S., Coffinier, Y., Delerue, C., Deresmes, D., Diarra, M., Diesinger, H., Grandidier, B., Marcon, L., Melin, T., Melnyk, O., Stievenard, D., Wirtz, Ludger, Zdrojek, M., Allan, G., Barbet, S., Coffinier, Y., Delerue, C., Deresmes, D., Diarra, M., Diesinger, H., Grandidier, B., Marcon, L., Melin, T., Melnyk, O., Stievenard, D., Wirtz, Ludger, and Zdrojek, M.

Abstract

This paper gives an overview over the fundamental research in nanosciences at the Institute of Electronics, Microelectronics and Nanotechnology (IEMN). We present some highlights from the numerical simulation of the electronic structure of nanowires and nanotubes, the charge spectroscopy of Si nanoparticles and C nanotubes, the scanning tunnelling spectroscopy of semiconductor quantum dots, to research in surface science for bio-screening.

Published
2008

34. Fundamental studies in nanosciences at the Institute of Electronics, Microelectronics, and Nanotechnology (IEMN)

Author

Allan, G., primary, Barbet, S., additional, Coffinier, Y., additional, Delerue, C., additional, Deresmes, D., additional, Diarra, M., additional, Diesinger, H., additional, Grandidier, B., additional, Marcon, L., additional, Melin, T., additional, Melnyk, O., additional, Stievenard, D., additional, Wirtz, L., additional, and Zdrojek, M., additional

Published
2008
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43. InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.

Author

Barbot C, Rondeau-Body C, Coinon C, Deblock Y, Tilmant P, Vaurette F, Yarekha D, Berthe M, Thomas L, Diesinger H, Capiod P, Desplanque L, and Grandidier B

Abstract

Increasing quantum confinement in semiconductor quantum dot (QD) systems is essential to perform robust simulations of many-body physics. By combining molecular beam epitaxy and lithographic techniques, we developed an approach consisting of a twofold selective area growth to build QD chains. Starting from 15 nm-thick and 65 nm-wide in-plane In 0.53 Ga 0.47 As nanowires on InP substrates, linear arrays of In 0.53 Ga 0.47 As QDs were grown on top, with tunable lengths and separations. Kelvin probe force microscopy performed at room temperature revealed a change of quantum confinement in chains with decreasing QD sizes, which was further emphasized by the spectral shift of quantum levels resolved in the conduction band with low temperature scanning tunneling spectroscopy. This approach, which allows the controlled formation of 25 nm-thick QDs with a minimum length and separation of 30 nm and 22 nm respectively, is suitable for the construction of scalable fermionic quantum lattices., (© 2024 IOP Publishing Ltd.)

Published
2024
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44. Tunneling mechanism and contact mechanics of colloidal nanoparticle assemblies.

Author

Biaye M, Zbydniewska E, Mélin T, Deresmes D, Copie G, Cleri F, Sangeetha N, Decorde N, Viallet B, Grisolia J, Ressier L, and Diesinger H

Abstract

Nanoparticle assemblies with thiol-terminated alkyl chains are studied by conducting atomic force microscopy (c-AFM) regarding their use as strain gauges for touch-sensitive panels. Current-force spectroscopy is used as a characterization tool complementary to the macroscopic setup since it allows a bias to be applied to a limited number of junctions, overcoming the Coulomb blockade energy and focusing on the contact electromechanics and the transport mechanism across the ligand. First, transition voltage spectroscopy is applied with varying force to target the underlying tunneling mechanism by observing whether the transition between the ohmic and exponential current-voltage behavior is force-dependent. Secondly, current-force spectroscopy in the ohmic range below the transition voltage is performed. The current-force behavior of the AFM probe in contact with a nanoparticle multilayer is associated with the spread of force and current within the nanoparticle lattice and at the level of adjacent particles by detailed contact mechanics treatment. The result is twofold: concerning the architecture of sensors, this work is a sample case of contact electromechanics at scales ranging from the device scale down to the individual ligand molecule. Regarding transport across the molecule, the vacuum tunneling mechanism is favored over the conduction by coherent molecular states, which is a decision-making aid for the choice of ligand in applications.

Published
2016
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45. Noise performance of frequency modulation Kelvin force microscopy.

Author

Diesinger H, Deresmes D, and Mélin T

Abstract

Noise performance of a phase-locked loop (PLL) based frequency modulation Kelvin force microscope (FM-KFM) is assessed. Noise propagation is modeled step by step throughout the setup using both exact closed loop noise gains and an approximation known as "noise gain" from operational amplifier (OpAmp) design that offers the advantage of decoupling the noise performance study from considerations of stability and ideal loop response. The bandwidth can be chosen depending on how much noise is acceptable and it is shown that stability is not an issue up to a limit that will be discussed. With thermal and detector noise as the only sources, both approaches yield PLL frequency noise expressions equal to the theoretical value for self-oscillating circuits and in agreement with measurement, demonstrating that the PLL components neither modify nor contribute noise. Kelvin output noise is then investigated by modeling the surrounding bias feedback loop. A design rule is proposed that allows choosing the AC modulation frequency for optimized sharing of the PLL bandwidth between Kelvin and topography loops. A crossover criterion determines as a function of bandwidth, temperature and probe parameters whether thermal or detector noise is the dominating noise source. Probe merit factors for both cases are then established, suggesting how to tackle noise performance by probe design. Typical merit factors of common probe types are compared. This comprehensive study is an encouraging step toward a more integral performance assessment and a remedy against focusing on single aspects and optimizing around randomly chosen key values.

Published
2014
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