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Research was conducted to examine the thermal stability of Si/Si(1-x-y)Ge(sub x)C(sub y)/Si quantum wells grown by rapid thermal chemical vapor deposition. High resolution x-ray diffraction, defect etching and Fourier transform infrared spectroscopic studies were performed at various annealing temperatures. Results show that the Si(sub 1-x-y)Ge(sub x)C(sub y) layer with an initial thickness below the critical thickness shows misfit dislocation formation after annealing at 1000 degrees C for 2 h which may be due to the strain compensation decrease by SiC precipitates.

We have employed ferromagnetic resonance to obtain magnetic anisotropy information in a series of YIG/GGG superlattices and a single YIG thin film with temperature variations. The Curie temperature of these samples increases with the YIG layer thickness, reaching saturation beyond a specific YIG thickness. As temperature rises, the magnitude of the calculated magnetocrystalline anisotropy constant decreases while the uniaxial anisotropy constant exhibits growing behavior. [Copyright &y& Elsevier]

Reports that epitaxial layers of GaN[sub x]As[sub 1-x] were grown on (001) GaAs substrates by pulsed laser ablation of a GaAs target in an ammonia atmosphere. Existence of a threshold NH[sub 3] pressure indicated by high-resolution x-ray diffraction.

Examines the layer-by-layer deposition of La[sub 1.85]Sr[sub 0.15]CuO[sub x] thin films by pulsed laser ablation. Use of reflection high-energy electron diffraction to monitor the growth of the thin films; Combination of pulsed molecular oxygen with a continuous source of atomic oxygen; Oscillation of the intensity of the specular beam during the deposition.

Describes the growth of epitaxial zinc selenide (ZnSe) films of high crystalline quality using pulse laser deposition (PLD). Pattern of the ZnSe films; Display of Kikuchi lines and bands by the pattern; Presence of free and bound excitons, donor-acceptor pairs by photoluminescence at 10 K of the films.