1. Atomic-scale characterization of Si(110)/6H-SiC(0001) heterostructure by HRTEM.
- Author
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Li, L.B., Chen, Z.M., Zang, Y., and Feng, S.
- Subjects
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HETEROSTRUCTURES , *SILICON carbide , *TRANSMISSION electron microscopy , *ATOMIC structure , *EPITAXY , *X-ray diffraction , *TEMPERATURE effect - Abstract
The atomic structure of Si(110)/SiC(0001) heterojunctions prepared on 6H-SiC(0001) was characterized by transmission electron microscopy and X-ray diffraction. An FCC-on-HCP parallel epitaxy is achieved for the Si(110)/SiC(0001) heterostructure with a growth temperature of 1050 °C and the in-plane orientation relationship is Si[1-10]//6H-SiC[11-20]. The pure edge misfit dislocations with a Burgers vector of 1 3 <11-20> SiC parallel to the interface are observed to accommodate the extreme lattice mismatch. Along the in-plane orientation Si[1-10]SiC[11-20], the Si/6H-SiC interface has a 4:5 Si-to-SiC matching mode with a residual lattice-mismatch of 0.26%. The misfit dislocation density at the Si/SiC interface is calculated as 1.217×10 14 cm −2 . [ABSTRACT FROM AUTHOR]
- Published
- 2016
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