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The role and effect of stable Ce^4+ centers in Ce-doped LuAG single crystal scintillator is further studied by means of measurements of several optical, luminescence and scintillation characteristics. Two LuAG:Ce single crystal samples are compared: in one of them the dominating Ce^4 + center is stabilized by high concentration Mg^2+ codoping while the other one shows only the presence of stable Ce^3 + center. Tailored (Eu, Mg)–doped LuAG single crystal is also prepared to test the presence and thermal stability of hole traps in the host which affect the timing characteristics of Ce^4+ scintillation cycle, namely its restoration back to 4+ charge state in last step of the cycle. EPR experiment was also employed at Mg- and (Eu, Mg) doped LuAG samples and the signature of the O^ - hole center stabilized by Mg^2 + ion was clearly obtained. [ABSTRACT FROM AUTHOR]

The compositional dependence of luminescence properties and scintillation response were investigated in Ce3+-doped Y2Gd1Al5-xGaxO12 (x=2, 3, 4) single crystals. The Gd3+ → Ce3+ energy transfer was evidenced by photoluminescence excitation spectra of Ce3+ emission. With increasing Ga content in the garnet host, the Ce3+ luminescence from the lowest 5d level (5d1) is shifted toward higher energy due to the decrease in the crystal field splitting of the 5d levels. Light yield (LY) and its dependence on the amplifier shaping time were measured under excitation with γ-rays High LY value of ~38 000 ph/MeV was obtained for a Y2Gd1Al5-xGaxO12:Ce sample. Scintillation decay was measured with an extended dynamical and temporal scale under the nanosecond pulse soft X-ray excitation. The decrease of both LY value and relative contribution of slower decay component in the scintillation response was observed with increasing Ga content in the garnet host. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (0.02, 0.05 %) garnet crystals grown by the micro-pulling down method were investigated. The onset temperature for luminescence quenching at ∼365 K is determined from the temperature dependence of photoluminescence decay time. At room temperature, the Mg (0.05 %) sample exhibits high integral scintillation efficiency of ∼445 % of BGO crystal, light yield value of 23,500 photons/MeV, and fast scintillation decay times of 20 ns (15 %) + 54 ns (85 %). The higher radioluminescence intensity of the Mg (0.05 %) sample correlates with an appearance of its lower themally-stimulated luminescence intensity in 77–500 K range. • Luminescence and scintillation properties of Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,Mg (Mg = 0.02 %, 0.05 %) crystals are investigated. • Both crystals show onset of luminescence quenching at 365 K. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows light yield of 23,500 photons/MeV. • Lu 2 YAl 2.5 Ga 2.5 O 12 :Ce,0.05%Mg shows scintillation decay time of 20 ns (14 %) + 54 ns (86 %). • Thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

The scintillation characteristics of Lu0.8Gd2.2 (Al5–xGax)O12:Ce,Mg (x = 2.6 and 3) single crystals grown by the micropulling down method are investigated. The light yield of 27600 photons/MeV obtained for Lu0.8Gd2.2Al2Ga3O12:Ce,Mg is higher than that of 25 400 photons/MeV obtained for Lu0.8Gd2.2Al2.4Ga2.6O12:Ce,Mg. The photoluminescence and scintillation decays measured at room temperature (RT) for Lu0.8Gd2.2Al2Ga3O12:Ce,Mg are faster than those for Lu0.8Gd2.2Al2.4Ga2.6O12:Ce,Mg. Temperature dependence of radioluminescence (RL) intensity indicates a lower quenching temperature for Lu0.8Gd2.2Al2Ga3O12:Ce,Mg. Coincidence time resolution of a Lu0.8Gd2.2Al2Ga3O12:Ce,Mg detector in coincidence experiment with a BaF2 detector was measured to be 410 ps. The afterglow and thermally stimulated luminescence (TSL) characteristics below RT are also measured. [ABSTRACT FROM AUTHOR]

Optical and scintillation characteristics of Mg2+-codoped Lu 2 Y(Al 5-x Ga x)O 12 :Ce (x = 2, 3) multicomponent garnet crystals grown by the micro-pulling down method were investigated. At RT, the shortening of scintillation decay time and a decrease of light yield (LY) value measured for a higher Ga containing samples can be explained by thermal ionization of the Ce3+ 5d 1 excited state. At 662 keV γ-rays, Lu 2 YAl 3 Ga 2 O 12 : Ce, 0.05%Mg exhibits high LY value of 29,000 ph/MeV along with scintillation decay times of 50 ns (86%) + 73 ns (14%). Co-doping with larger Mg2+ content leads to a decrease of LY value, scintillation decay time, and afterglow level. Radioluminescence quenching observed at low temperature region in correlation with large thermoluminescence peaks can be caused by trapping of electrons at intrinsic shallow traps. • Luminescence and scintillation properties of Lu 2 Y(Al 5-x Ga x)O 12 :Ce,Mg (x = 2, 3) crystals are investigated. • Temperature dependencies of photo-and radioluminescence are presented. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows high light yield of 29,000 photons/MeV. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows quenching temperature at 435 K due to thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]