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Ce3+,Pr3+-codoped SiO2-Al2O3-B2O3-Gd2O3 glasses (SABG:Ce,Pr) were prepared by melt quenching under a CO reducing atmosphere. Luminescence properties were investigated under UV and X-ray excitations. A dominant emission band at 430 nm belonging to the Ce3+:5d1 → 4f transition was observed in the photo- and radio-luminescence spectra. The energy transfer occurs from this Ce3+ band toward the 3PJ levels of Pr3+ with an efficiency of up to 24%, followed by the reduction of integrated luminescence intensity with an increasing Pr3+ concentration. This result is attributed to the increase in the reabsorption of Ce3+ luminescence and the non-radiative energy transfer toward the 3PJ levels of Pr3+. The cross-relaxation process within the Pr3+ pairs can further diminish the total luminescence yield at high Pr3+ concentrations. The integral scintillation efficiency and light yield measurements were carried out and compared to the reference Bi4Ge3O12 (BGO) crystal. [ABSTRACT FROM AUTHOR]

Optical and scintillation characteristics of Mg2+-codoped Lu 2 Y(Al 5-x Ga x)O 12 :Ce (x = 2, 3) multicomponent garnet crystals grown by the micro-pulling down method were investigated. At RT, the shortening of scintillation decay time and a decrease of light yield (LY) value measured for a higher Ga containing samples can be explained by thermal ionization of the Ce3+ 5d 1 excited state. At 662 keV γ-rays, Lu 2 YAl 3 Ga 2 O 12 : Ce, 0.05%Mg exhibits high LY value of 29,000 ph/MeV along with scintillation decay times of 50 ns (86%) + 73 ns (14%). Co-doping with larger Mg2+ content leads to a decrease of LY value, scintillation decay time, and afterglow level. Radioluminescence quenching observed at low temperature region in correlation with large thermoluminescence peaks can be caused by trapping of electrons at intrinsic shallow traps. • Luminescence and scintillation properties of Lu 2 Y(Al 5-x Ga x)O 12 :Ce,Mg (x = 2, 3) crystals are investigated. • Temperature dependencies of photo-and radioluminescence are presented. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows high light yield of 29,000 photons/MeV. • Lu 2 YAl 3 Ga 2 O 12 :Ce,0.05%Mg shows quenching temperature at 435 K due to thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

Mg2+-codoped Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce (YGAGG:Ce,Mg) single crystal was grown by the Czochralski method and its luminescence and scintillation properties were investigated. Temperature dependence of radioluminescence (RL) yield and photoluminescence (PL) decay time was measured, and activation energy of thermal ionization process was determined from temperature-dependent PL decay time measurement. YGAGG:Ce,Mg exhibited high X-ray excited RL yield almost 5 times higher than BGO reference scintillator. Its light yield of 41,500 ph/MeV and scintillation decay times of 12 ns (2%) + 52 ns (65%) + 207 ns (33%) were measured under excitation with 662 keV γ rays from 137Cs source. Afterglow and thermally stimulated luminescence characteristics are also investigated. • Luminescence and scintillation properties of Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg crystal are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Y 0.6 Gd 2.4 Al 2 Ga 3 O 12 :Ce,Mg shows high light yield of 41,500 photons/MeV. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and thermoluminescence characteristics are investigated. [ABSTRACT FROM AUTHOR]

Luminescence and scintillation characteristics of Mg2+-codoped (Lu x Gd 3-x)Al 2.4 Ga 2.6 O 12 :Ce (x = 0.2–0.8) garnet crystals grown by the micro-pulling down method are investigated. The Ce3+ 5d 1 → 4f luminescence is blue-shifted with increasing Lu content due to the decrease in crystal field splitting of the 5 d levels. With increasing Lu content, the shortening of scintillation decay time accompanied with a decrease of LY value as measured at room temperature can be explained by thermal ionization of the Ce3+ 5d 1 excited state. Co-doping with Mg2+ results in the shortening of scintillation decay time, the reduction of LY value and afterglow intensity. At low temperature the radioluminescence quenching is observed in correlation with large thermoluminescence peaks, which can be attributed to the localization of electrons at intrinsic shallow traps. • Luminescence and scintillation of (Lu,Gd) 3 Al 2.4 Ga 2.6 O 12 :Ce, Mg crystals are investigated. • Temperature dependence of photo-and radioluminescence are presented. • Luminescence quenching above RT can be caused by thermal ionization. • Afterglow and low-temperature TL characteristics are investigated. [ABSTRACT FROM AUTHOR]