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The effect of the Rashba spin-orbit interaction on the shot noise, spin/valley polarization in 8- Pmmn borophene-based superlattice are studied theoretically, by applying the transfer-matrix approach. The spin-dependent transmission probability can be easily controlled by the number of superlattice barriers, the strength of the Rashba, and the incident electron angle. The Fano factor without spin rotation as well as with spin rotation shows an oscillatory pattern versus the strength of the Rashba, and the oscillatory behavior becomes more pronounced as the number of barriers increases. Also, the Fano factor shows a strong dependence on the superlattice direction and number of barriers. The spin and valley polarizations can be easily controlled by the number of barriers and the direction of superlattice. Our findings in this work could provide useful for valleytronics/spintronics systems based on the 8- Pmmn borophene. [ABSTRACT FROM AUTHOR]

Heusler alloys based on 4d-elements are relatively less explored though they are known to host interesting electronic/magnetic properties useful for future spintronics applications. Here, we report a comparative study of the structural and magnetic properties of FeRuVSi (FRVS) and FeRuVGe (FRVG) using experimental and theoretical tools. Magneto-transport measurements have also been carried out to probe the role of magnetism on their transport behaviour. Room temperature (T) X-ray diffraction data reveals cubic crystal structure (space group No. 216) with B 2 type antisite disorder between Fe and Ru sites in both the alloys. They show ferromagnetic behaviour below the Curie temperature (T C) 84 K for FeRuVSi and 57 K for FeRuVGe respectively. The field dependence of magnetization at low-T shows saturating (nearly saturating) behaviour for FRVS (FRVG). Transport measurements show metallic behaviour with a sharp reduction in the resistivity near T C. Ab-initio calculations predict nearly half metallic behaviour with ∼ 87 % and ∼ 89 % spin polarization for FRVS and FRVG in their ordered states. The inclusion of antisite disorder changes the magnetic configuration, leading to a visible decrease in the magnetic moment and spin polarization. The calculated net moment and the transport properties agree fairly well with those observed experimentally. These results confirm the importance of disorder in determining the intrinsic properties of these alloys. Such combined studies help in the identification of more novel quantum materials suitable for future spintronic applications. ● We present a comparative study of the magnetic, transport, and electronic properties of FeRuVZ (Z = Si, Ge) Heusler alloys. ● Disorder increases the symmetry of the FeRuVSi Heusler alloy to L 2 1 type, higher than that in FeRuVGe. ● The magnetization goes from saturating to nearly saturating behaviour when Si is changed to Ge. ● High spin polarization and nearly half metallic behaviour in the ordered state in both the alloys. [ABSTRACT FROM AUTHOR]

For the application of the spintronics devices, large Rashba spin splitting and Zeeman spin splitting are required. However, the absence of spin splitting in the non-polar MXene Lu 2 CT 2 (T = F, OH) with mirror symmetry limits the functionality of the spintronics applications. In this paper, by the density functional theory calculation, the effect of the electric field on the electronic properties along with the spin polarization of MXene Lu 2 CT 2 (T = F, OH) are investigated. For Lu 2 CF 2 , the electric field can effectively regulate the energy band structures resulting in the indirect-direct band gap transition and semiconductor-metal transition. The spin splitting and spin polarization that are not observed in the situation of the intrinsic systems are established due to the breaking of the mirror symmetry by a suitable external electric field, which is sufficient to support the spintronics functionality. Furthermore, the electric field can effectively control the in-plane Rashba spin splitting and out-of-plane Zeeman spin splitting. The parameters of Rashba and the warping coefficients are comprehensively studied by using the effective k · p model. Therefore, our results provide a possible way to induce and tune Rashba spin splitting and Zeeman spin splitting in the MXene by an external electric field, which is useful for spintronic devices. [Display omitted] • We offer a possible way to induce and tune Rashba effect in no-polar MXene by an external electric field for spintronic devices. • The parameters of Rashba and the warping coefficients are comprehensively studied by using the effective k · p model. • We offer a possible way to induce and tune Rashba effect in no-polar MXene by an external electric field for spintronic devices. [ABSTRACT FROM AUTHOR]

• Spin transport properties in bilayer graphene on a Cr 2 X 2 Te 6 monolayer (where X = Ge, Si, or Sn). • Employment of a Hamiltonian model to describe carrier motion in the bilayer graphene/ Cr 2 X 2 Te 6 system. • Study of spin transport, demonstrating the modulation of spin polarization from 0% to 100% by varying gate voltage. • Perfect spin polarization switching from −100 % to + 100 % through gate voltage adjustment, achieving complete spin filtering. • Unique spin conductance curve splitting under perpendicular electric field, showing potential for spintronic applications. We investigate the spin transport properties of bilayer graphene grown on a monolayer Cr 2 X 2 Te 6 hybrid structure. Here, X can be Ge, Si, or Sn, all of which are van der Waals layered materials with magnetic properties. Our results show that the magnetism in bilayer graphene is layer-dependent, affecting the spin-dependent energy gap and Fermi level. Focusing specifically on the X = Ge case, we reveal that pure spin currents can be precisely controlled by applying gate voltage and a perpendicular electric field across the barrier. By varying these parameters, we achieve perfect switching of pure spin current from spin-down to spin-up due to the system's layer-dependent magnetism. Moreover, due to differing gaps between spin-up and spin-down electrons, spin polarization can sharply jump from 0 % to 100 % with changes in gate voltage. The splitting of spin conductance curves, creating a fully functional spin-filtering junction, is also predicted under a varying perpendicular electric field. This model can be extended to cases where X is Si or Sn due to their similar electronic band structures. Our research demonstrates the potential of bilayer graphene on Cr 2 X 2 Te 6 hybrid structures, which exhibit distinctive layer-dependent magnetism ideal for spintronic applications. [ABSTRACT FROM AUTHOR]

The strong interaction between graphene and elemental ferromagnetic transition metals results in considerable shifts of the graphene π band away from the Fermi level. At the same time, a weakly-dispersing single-spin conical band feature is found in the proximity of the Fermi level at the K ̄ point in the surface Brillouin zone of epitaxially-aligned graphene/Co(0001). Here, the robustness of this electronic state against twisting angles at the interface is experimentally and theoretically demonstrated by showing the presence of similar band features also in the case of rotated graphene domains on Co(0001). Spin-resolved reciprocal space maps show that the band feature in rotated graphene has similar Fermi velocity and spin polarization as its counterpart in epitaxially-aligned graphene. Density functional theory simulations carried out for the experimentally observed graphene orientations, reproduce the highly spin-polarized conical band feature at the graphene K ̄ point, characterized by a hybrid π -d orbital character. The presence of the conical features in the rotated domains is attributed to the unfolding of the superstructure K ̄ point states exclusively to the K ̄ point of the graphene primitive cell. The similarities found in the electronic character for different graphene orientations are crucial in understanding the magnetic properties of realistic graphene/Co interfaces, facilitating their implementation in spintronics applications. [Display omitted] [ABSTRACT FROM AUTHOR]

A high degree of spin polarization in half-metallic double perovskites is a prerequisite for several applications in spintronics, which depends crucially on the cationic order of the systems. This paper reports a study on tailoring the structure and morphology of nano-sized Sr 2 Fe 1- x Zn x MoO 6 (x = 0.05, 0.1, 0.15) materials to improve their spin polarization. The combined analysis of synchrotron X-ray diffraction and magnetization data shows that Zn replaces Fe in the B sites. Although the majority of particles have lateral dimensions in the range 30–60 nm as observed by scanning electron microscope, the samples with x = 0.1 and 0.15 show finite-size effects with superparamagnetism below room temperature and a reduced Curie temperature (from 410 K for x = 0.05–390 K for x = 0.15). The results are due to the formation of networks of insulating Mo–O–Zn–O–Mo linkages and anti-phase boundaries, which divide the particles into smaller domains with a mean diameter of ∼11 nm as determined via a Langevin fit. The almost perfectly ordered structure in the nanodomains is responsible for a high magnetoresistance ratio. A value of -42% at 5 K in 50 kOe is recorded for the sample x = 0.15. Via fitting the magnetoresistance curve using the Inoue-Mekagawa theory, the spin polarization of 99% is determined. [ABSTRACT FROM AUTHOR]

The spin polarization of current plays an important role in the performance of spintronic devices. Therefore, a highly spin-polarized current source has always been explored through various methods. We study the effects of magnetic order on the electronic structures of antiferromagnetic (AFM) MnBi 2 Te 4 films. A significant spin splitting is found in the surface states of a AFM MnBi 2 Te 4 film with three septuple layers (SLs). The AFM film can show typical metallic behavior for spin-down electrons, and exhibit a semiconductor or insulator behavior with a band gap at the Fermi level for spin-up electrons, just like semimetal ferromagnets with theoretical spin polarization up to 100%. We also study that the electron transport in the 3-SLs AFM film with a square potential barrier, we find a highly spin-polarized current can be switched on and off by modulating the barrier height in the film. • 3-SLs AFM film exhibits a semimetal ferromagnets behavior. • A highly spin-polarized current can be switched on and off by modulating the barrier height. • Gapless surface states induced by magnetic order. • Large spin splitting in spin splitting. [ABSTRACT FROM AUTHOR]

This paper presents a study on the electronic structure and spin properties of Transition Metal (TM) series doped Black Phosphorus (BP) using density functional theory (DFT) computations. The results indicate that the doped-Cr atom has the lowest formation energy in the BP system compared to other defects. Intrinsic defects do not induce magnetism in the BP material. However, the six types of TM atoms (Ti, V, Cr, Mn, Fe, and Ni) can lead to localized magnetic states in the system. Furthermore, researches on applying strain to the BP system have found that it will induce spin polarization in Co-doped system when applying 8% strain. Magnetic Couplings investigation demonstrate that Fe–Fe interactions exhibit ferromagnetic behavior in the BP system, with a Curie temperature above the room temperature at the d 1 or d 4 distance. These findings are significant to gain deeper insights into material spin polarization and magnetic modulation in functional materials and provide valuable references for the future development of spintronics. • The spintronic properties of transition metals doped black phosphorus were studied systematically. • The magnetic coupling between transition metals is described. • The effect of strain on the electronic structure of the system is revealed. • Our research is beneficial to the development of spintronics. [ABSTRACT FROM AUTHOR]

The spintronic is an emerging technology which controls the properties of multifactional devices with spin of electrons. In present manuscript, Wien2k and Boltz Trap codes are used to explore electronic, magnetic, and thermoelectric characteristics of Sr 2 CrXO 6 (X = Nb, Mo) double perovskites (DPs). The evaluation of energies released in paramagnetic (PM), antiferromagnetic (AFM), and ferromagnetic (FM) states assure the stability of FM states. Both the negative formation energy and the tolerance factor confirm structural and thermodynamic stability in FM states. The 100 % spin polarization was confirmed by both integer values of magnetic moment (MM) and the spin polarization factor. The values of exchange energy, double exchange model, hybridization of p-d states, and exchange constants are calculated to explore the nature of ferromagnetism and spin functionality. The effect of thermoelectric parameters on spin of electrons and thermoelectric performance are elaborated by thermal to electrical conductivity ratio, Seebeck coefficient and power factor. • High Curie temperature, and spintronic applications. • Spin of electrons overcome the charge with multifuctional properties. • Double exchange mechanism confirms the ferromagnetism by electron spin instead of magnetic ion clustering. • Half metallic ferromagnetism and 100 % spin polarization. • Large value of electrical conductivity and low values of thermal conductivity. [ABSTRACT FROM AUTHOR]

ABO 3 perovskites oxides show fascinating functional properties, including ferroelectricity, magnetism, metal-to-insulator transition, half metallicity, polar metallic phase, etc. In particular, rare earth nickelates and alkaline earth nickelates within the orthorhombic crystal structures show an insulator–metal transition (IMT) and half-metallic (HM) nature respectively. Here, we report a series of ferromagnetic polar half metals by constructing LnNiO 3 /CaNiO 3 short period 1/1 superlattices (SLs) with Ln = La, Nd, Gd, Dy, Tm, and Lu within an orthorhombic phase. The polar distortion is induced by a hybrid-improper ferroelectric mechanism i.e., by constructing Ln/Ca layer-ordering. The system shows a ferromagnetic Ni-Ni interaction, whereas Ni-3 d 's are interacting antiferromagnetically with O-2 p. We explain that the origin of observed half metallicity and ferromagnetism is due to strong hybridization between Ni-3 d and O-2 p near the Fermi level and double exchange mechanism, respectively. • Ferromagnetic polar half-metals within LnNiO 3 /CaNiO 3 • Large spin polarization is expected. • Hole mediated double exchange mechanism drives the ferromagnetic ordering. • The systems exhibit polar nature through hybrid improper ferroelectric mechanism. • These systems are metallic due to strong hybridization between Ni-3 d and O-2 p. [ABSTRACT FROM AUTHOR]

We report the structural stability and half-metallicity of the half-Heusler alloy CoMnSe via the density functional theory (DFT). The γ -phase ferromagnetic of CoMnSe is more energetically stable than other phases. The electronic and magnetic properties show that the CoMnSe is a false half-metal ferromagnetic with 98.10% spin polarization and a total magnetic moment of 4 μ B . This value is in good agreement with the Slater-Pauling rule and available data using the GGA method, whereas the GGA+U method shows it is a ferrimagnetic metal with 95.73% spin polarization, and the total magnetic moment is 4.01 μ B. The effects of Bulk strain and axial strain demonstrate that the relative change of total magnetic moment M t o t and spin polarization P of CoMnSe is almost negligible, indicating that the half-metallicity is strong against Bulk strain and axial strain. Using Monte Carlo simulations, a transition ferromagnetic-paramagnetic response is also studied. • CoMnSe alloy is mechanically and thermodynamically stable. • CoMnSe does not undergo martensitic transformation. • CoMnSe is found to be falsely half-metallic using GGA, while it is metallic using GGA+U. • The high spin polarization and Curie temperature make CoMnSe suitable for spintronic. [ABSTRACT FROM AUTHOR]

A new theoretical concept of an electrically controllable single-electron spin filter (polarizator) based on the exchange interaction in the system of interacting quantum dots or impurity atoms is proposed. The sign of the spin polarization of the current flowing through the device can be effectively controlled in two ways (i) by changing the applied bias and (ii) by tuning the tunnel coupling via an external gate. The minimal realization involves three bound state levels coupled to the contact leads. One of these levels is occupied by a single electron with a certain spin and the two-electron occupation is prohibited by a strong on-site Coulomb repulsion. Interestingly, while the spin polarization of this state is fixed, the sign of the single-electron current spin polarization flowing between the contacts through two consistent bound state levels can be switched. • A new theoretical concept of an electrically controllable single-electron spin filter is proposed. • The presence of both exchange interaction and on-site Coulomb repulsion is important. • Spin-filtering can be organized by changing the applied bias or by tuning the tunnel coupling via an external gate. • The considered phenomena are sensitive to electron correlations giving an experimental access to the many-body phenomena. • The obtained results open the possibility for precise control of tunneling current spin polarization. [ABSTRACT FROM AUTHOR]

Vanadium Nitride based magnetic heterostructures have opened up unprecedented opportunities in the field of spintronics owing to their half metallicity and a high value of spin polarization. In this paper, a tight-binding model of epitaxially grown VN/AlN/VN heterostructure is developed with different types of bonding at the left and right interface. The Slater–Koster tight-binding scheme is used to obtain the on-site and hopping energies of the model by fitting them to bulk DFT band structures. Electron transport across the VN/AlN/VN heterostructure is then studied using the non-equilibrium Green's function method, which works well within the tight-binding framework. An asymmetry in the interface bonding of the structure was found to produce a resonance peak in the transmission spectra at around 0.5 V. Beyond 0.5 V, the tunnel junction registers a large antiparallel current resulting in a negative tunnel magnetoresistance. Moreover, the presence of a magnetic impurity in the insulating barrier enhances tunneling across the junction resulting in a large current that decreases with the value of intra-atomic Coulomb repulsion, U , at the impurity site. • Half metallic Vanadium Nitride acts as a spin injector. • An asymmetric interface leads to a negative TMR. • Magnetic impurities in the barrier enhances the current. • Manipulation of spin valve current by impurity spin coupling. [ABSTRACT FROM AUTHOR]

• This article reviews recent work on chirality-induced spin selectivity (CISS), which has been extensively studied over the last two decades. • While current-induced spin polarization in chiral molecules is widely accepted as the fundamental principle of the CISS, only a few studies on bias-current-free CISS have been reported. • The possible mechanism of bias-current-free CISS, i.e. thermally driven broken-time-reversal symmetry of chiral molecules at the interface is discussed. Chirality-induced spin selectivity (CISS) has been extensively studied over the past two decades. While current-induced spin polarization in chiral molecules is widely recognized as the fundamental principle of the CISS, only a few studies have been reported on bias-current-free CISS, where there is no bias electric current in chiral molecules. Recent studies on the chirality-induced exchange bias and current-in-plane magnetoresistance (CIP-MR) effects using chiral molecule/ferromagnet bilayer systems indicate that chiral molecules at the interface possess thermally driven broken-time-reversal symmetry, which induces bias-current-free CISS, i.e. a spontaneous effective magnetic field in the system. In this paper, we briefly review CISS-related phenomena in terms of the symmetry and discuss the mechanism of bias-current-free CISS. We also discuss the possibility of the linear magnetoelectric effect of chiral molecules, which arises from the spin polarization at the edges of molecules with metallic contacts, and its potential impact on the observed CISS phenomena. [ABSTRACT FROM AUTHOR]

In this study, the author theoretically investigates the effect of the external Rashba interaction on the properties of spin transport in a magnetic MoS 2 superlattice. The results show that the spin conductance of the magnetic MoS 2 superlattice heavily relied on the applied external magnetic field in the presence of more than one barrier. Moreover, the spin conductances with and without the spin-flip exhibited a gap, the size of which increased with the number of the barriers in the superlattice. The spin-dependent conductance in the magnetic MoS 2 superlattice could be controlled by changing the number of barriers to the superlattice and the strength of the Rashba interaction. The spin polarization exhibited oscillating behavior in terms of the energy of the incident electron and the strength of the Rashba interaction. Remarkably, full-spin polarization could be achieved by using an MoS 2 superlattice under an external magnetic field. The results of this study confirm that the magnetic MoS 2 under the Rashba interaction can be used in spintronics and electronics devices in the future. [Display omitted] • Transport properties were investigated in a magnetic MoS 2 superlattice. • The spin conductivity with and without spin flip has a gap. • Spin-dependent conductivity can be controlled by changing the number of barriers. • Direction and value of the spin polarization can be changed by magnetic field. • By a magnetic MoS 2 superlattice, the 100% spin polarization current can be obtained. [ABSTRACT FROM AUTHOR]

Based on Dresselhaus spin-orbit-coupling effect in a layered semiconductor microstructure, an electron-spin filter is proposed. It is found that an obvious spin polarization effect appears and is related to electron energy and in-plane wave vector. It is also found that both magnitude and sign of spin polarization can be controlled by strain engineering or layer's thickness. This layered-semiconductor microstructure can act as a tunable spin filter. • Spin-polarized transport is investigated in InSb/GaSb modulated by Dresselhaus spin-orbit coupling. • An obvious spin polarization appears. • Spin polarization ratio is manipulated by strain engineering or layers' thickness. • A electron-spin filter is obtained for spintronics device applications. [ABSTRACT FROM AUTHOR]

For the purposes of fitting the characteristics of the Magnesium sulfide (MgS) and, Magnesium selenide (MgSe) semiconductors in Spintronic applications, a theoretical ab-initio investigation of Transition metals (TM=Ti, V, Cr, Mn, Co, Ni) substitution is performed. The equilibrium properties have been studied in the zinc-blende phase of MgS and MgSe. The effects of temperature and pressure on the structural, electronic, thermodynamic, and magnetic properties of our systems are explored as well. It is found that the introduction of the TMs in MgS and MgSe brings out a half-metallic ferromagnetic behavior with 100% polarization around Fermi level in Ti, V, Cr, Co and Ni cases, contrary to the Mn case where the half-metallic feature does not appear. The double exchange mechanism was the mechanism responsible for magnetism in these systems. Finally, the high Curie Temperate (T c) of the ferromagnetic systems reveals that Ti, Cr and V substitutions could play a significant role in spintronic applications. • Electronics & magnetism merge, yielding Innovative materials & components for Spintronics. • Half-metallic magnets are 100% spin polarization; ideal for Spintronic apps. • Investigating transition metal substitutions (Ti, V, Cr, Mn, Co, Ni) in MgS and MgSe. • Half-metallic ferromagnetic found for Ti, V, Cr, Co, & Ni substitutions, except Mn. • High Curie temperature for Cr, V, and Ti substitutions above room temperature. [ABSTRACT FROM AUTHOR]

The recently predicted penta-RuS 4 monolayer with high stability, large nontrivial band gap and robustness against oxidation is promising for applications in nanoelectronics. The band structure of this material exhibits unique characteristics under the uniaxial strains and we show that this feature provides the possibility of generating the controllable charge and spin beams. We calculate the transport coefficients for the strain barrier in this monolayer, generally, in the presence of a magnetic filed and an applied voltage. Charge transport through the strain barrier shows that we can generate electron beams which their directions are adjusted by the strain and the external voltage. Also, we show that by addition of a magnetic field, we can generate fully spin polarized electron beams, emerging at angles determined by the applied voltage. These features can be of great importance in designing splitters and spin lenses. The possibility of changing the perfect polarizations between the two spin states, easily by altering the voltage, highlights the potential application of RuS 4 monolayer for spintronic switches. Our calculations demonstrate that for the very small lengths of the strain barrier, the tunneling effect of evanescent waves dominates the contributions of the itinerant waves in transport process. We show that this unique phenomenon is related to the shape of the band structure. • Generation of electron beams with directions adjustable by strain and voltage • Easy switch of the perfect spin polarization by altering the voltage • Perfect spin-polarized beams with tunable direction by using a magnetic field • The tunneling effects of the evanescent waves overcome the traveling waves [ABSTRACT FROM AUTHOR]

Highlights • Magnetic and electronic properties of Cd 1-x Zn x Cr 2 Se 4 have been studied experimentally and theoretically. • The difference in energy between the antiferromagnetic (AFM) and ferromagnetic (FM) states reveals the magnetic competition coexisting in this system. • All samples were found to keep 100% spin polarization and behave as half-metallics. Abstract We have studied the magnetism of crystalline Cd 1-x Zn x Cr 2 Se 4 spinels with (0.35 ≤ x ≤ 0.55) under magnetic field up to 15 T. The total magnetic moment, Curie temperature, lattice parameter and exchange integrals were found to decrease with Zn substitution. Ab -initio calculations carried out using full potential augmented plane wave (FP-LAPW) method were performed to study the magnetic, and electronic structure using generalized gradient approximation (GGA) and the modified Becke-Johnson (mBJ) to correct the gap's energy. The obtained results were in good agreement with the experimental ones. It is shown that there is a competition between ferromagnetic (FM) and antiferromagnetic (AFM) interactions: the super-exchange mechanism slightly increases the AFM contribution and keeps the FM the dominant mechanism in this range of substitution. From the density of states, we demonstrate that the system keeps the half-metallic state for the composition range 0.125 ≤ x ≤ 0.55 with 100% spin polarization. Our results highlight that it is possible to obtain a half-metallic semiconductor with tunable magnetic state which is promising for applications in spintronics. [ABSTRACT FROM AUTHOR]

Abstract We have constructed an analytic formula to treat the perpendicular magnetic anisotropy energy in ferromagnetic metals with low symmetry, such as C 4 V and C 3 V. We find that the anisotropy energy is proportional to a part of the expectation values of the orbital angular momentum and magnetic dipole operator. Although the result is similar to the model proposed by Laan (1998) [2] , we have derived a concrete expression for the spin-flip virtual excitation process term, which can be dominant in atoms with small magnetic moments and/or small exchange splitting. Pt monatomic layer with proximity-induced spin polarization grown on Fe is an example of this. Other multilayer systems such as Co/Pd and Co/Ni, and bilayer systems such as Fe(CoB)/MgO can be discussed similarly. Moreover, the relation between perpendicular magnetic anisotropy energy and measurable physical parameters is discussed based on X-ray magnetic circular dichroism spectroscopy. Highlights • An analytic formula to treat the perpendicular magnetic anisotropy energy in ferromagnetic metals with low symmetry has been constructed. • We find that the anisotropy energy is proportional to a part of the expectation values of the orbital angular momentum and magnetic dipole operator. • We have derived a concrete expression for the spin-flip virtual excitation process term. [ABSTRACT FROM AUTHOR]

Abstract Spin-polarized Goos-Hänchen (GH) displacement is calculated for electrons in a hybrid magnetic-electric-barrier (MEB) nanostructure modulated by spin-orbit couplings (SOCs), which can be realized experimentally by the deposition of a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe in parallel configuration on the top of the GaAs/Al x Ga 1-x As heterostructure. Both Zeeman interaction (ZI) and SOC are taken into account. It is shown that ZI has less contribution to spin-polarized GH displacement than SOC due to a small g-factor for GaAs. It is also shown that spin-polarized GH displacement can be controlled by Rashba or Dresselhause SOC --interfacial confining electric field or strain engineering, which results hence in a tunable spatial spin splitter for spintronics device applications. Highlights • Spin-dependent Goos-Hänchen effect is investigated theoretically in a hybrid MEB nanostructure modulated by SOCs. • GH displacement and its spin polarization can be tuned by adjusting SOC strength. • Such a device can serve as a controllable spatial spin splitter. [ABSTRACT FROM AUTHOR]

Abstract In this study, the structural and electronic properties of CoX 0.25 S 1.75 (X = F, Cl, or Br) were investigated based on spin-polarized first-principles calculations. S-F, S-Cl, and S-Br covalent bonds are not present in CoX 0.25 S 1.75 (X = F, Cl, or Br). The generalized gradient approximation (GGA) + U and Heyd-Scuseria-Ernzerhof hybrid functional method may overestimate the spin-down band gap for CoS 2. The results obtained for CoX 0.25 S 1.75 (X = F, Cl, or Br) using the GGA method are expected to be more reasonable. Only the half-metal CoF 0.25 S 1.75 can be used for spintronic applications and the metal CoX 0.25 S 1.75 (X = Cl or Br) is more suitable for use in supercapacitors. The p - d hybridization between S and Co atoms in CoF 0.25 S 1.75 is stronger compared with that in CoS 2. The p - d hybridization between S(S-X) and Co atoms is stronger whereas that between S(S-S) and Co atoms is weaker in CoX 0.25 S 1.75 (X = Cl or Br). Doping with F and Cl (Br) atoms in CoS 2 induces new bands with less and more dispersion, respectively. In CoX 0.25 S 1.75 (X = F or Cl), X atoms gain more electrons than S atoms and the charge density difference indicates that S atoms donate electrons to F and Cl atoms. However, in CoBr 0.25 S 1.75 , Br atoms gain fewer electrons than S atoms and there is almost no charge transfer between S and Br atoms. Graphical abstract Image 1 Highlights • Results obtained for CoX 0.25 S 1.75 by GGA method are expected to be more reasonable. • CoF 0.25 S 1.75 is half–metallic and can be used for spintronic applications. • CoCl 0.25 S 1.75 and CoBr 0.25 S 1.75 are more suitable for use in supercapacitors. • Doping CoS 2 with F/Cl (Br) atoms induced new bands with less/more dispersion. [ABSTRACT FROM AUTHOR]

• We performed a computational and theoretical study of FeCrTiAl. • Our calculations indicate that this material undergoes several band structure transitions. • Another interesting feature of FeCrTiAl is that its spin polarization changes sign from negative to positive under pressure. • At the largest considered lattice parameters, this compound exhibits nearly 100% spin polarization. Spin-gapless semiconductors (SGS) represent a new type of compounds with potential applications in novel spintronic devices. Here, we performed a comprehensive computational and theoretical study of FeCrTiAl, a quaternary Heusler compound that was recently predicted to exhibit nearly SGS properties. Our calculations indicate that this material undergoes several band structure transitions from essentially semimetallic phase at smaller lattice constants to nearly type-II SGS at the ground state, then to nearly type-III SGS and further to nearly type-I SGS, as the lattice parameter is increased. Another interesting feature of FeCrTiAl is that its spin polarization changes sign from negative to positive as the volume of the cell increases. At the largest considered lattice parameters, this compound exhibits nearly 100% spin polarization. The mechanical expansion discussed in this text may be achieved, in principle, either by applying an epitaxial strain in thin-film geometry, or by chemical substitution, for example with non-magnetic element of larger atomic radius. We hope that the presented results may provide guidance for further research on mechanical strain induced manipulation of electronic and magnetic properties of spin-gapless semiconductors. [ABSTRACT FROM AUTHOR]

We theoretically investigate the effect of the Rashba interaction on the conductance as well as the valley and spin polarization in an 8- Pmmn borophene superlattice by solving the Dirac–like equation and using the transfer matrix approach. The valley and spin-dependent conductance and spin polarization are effectively controlled by changing the direction of superlattice. The number of the quantum electrostatic potential plays an essential role in quantum transmission properties. Furthermore, in such a superlattice, the conductance of the electrons with spin rotation can be easily adjusted by the Rashba strength, direction of superlattice and electrostatic potential. Thus, borophene superlattice with Rashba interaction can act as a spin and valley splitter. Our work provides a new structure for spin-flip and can be useful for future spintronics and valleytronics applications. • We study the spin-dependent transport properties in an 8- Pmmn borophene superlattice. • Spin rotation can be easily adjusted by Rashba strength and electrostatic potential. • The borophene superlattice under RSOI can use as a spin-converter. • The valley polarization depends sensitively on the number of the barriers. • Magnitude and sign of spin polarization can be adjusted by direction of superlattice. [ABSTRACT FROM AUTHOR]

Spin transport properties in a non-uniform quantum wire (QW) in the presence of both the Rashba and Dresselhaus spin–orbit couplings (SOCs) is investigated by using the non-equilibrium Green's function (NEGF) method combined with the Landauer Büttiker formalism. It is found that such a non-uniform quantum wire exhibits considerable spin polarization in its conductance in the influence of both the Rashba and Dresselhaus SOCs, and that the two SOCs' strengths strongly affect both the magnitude and sign of the electron spin polarization. Interestingly, the Rashba and Dresselhaus SOCs play the same modulating role in the electron spin polarization. The proposed nanostructure can potentially be utilized to devise an all-electrical spintronic device. [ABSTRACT FROM AUTHOR]

Searching experimental feasible two-dimensional (2D) ferromagnetic crystals with room-temperature magnetic order and high spin-polarization is one key for the development of next-generation spintronic devices. Inspired by the recent experimental achievement for the synthesis of Janus MoSSe monolayer with out-of-plane symmetry, here, by ab initio calculation, we demonstrate this feasibility with the discovery of intrinsic 2D ferromagnetic Janus TMDs monolayer (TMXX′, TM = V, Cr and Mn; X, X′ = S, Se and Te, X ≠ X′) with large spin-polarization and high Curie temperature. Particularly, the MnSSe monolayer show half-metal with 100% spin polarization and wide half-metallic gap. A Curie temperature as high as 400 K has been found for VSSe materials. The formation energy calculation for Janus TMDs can be comparable with the TMDs monolayer. The dynamical stability for these 2D crystals also have been confirmed by phonon spectrum calculation. Our study presents a new class of 2D magnetic materials for future spintronics and valleytronics. [ABSTRACT FROM AUTHOR]

Facing physical limits to further development, modern electronics explores alternative approaches. One of the most promising routes is offered by spintronics employing spin degree of freedom. Silicon spintronics is especially important due to the central technological role of Si. This technology requires non-equilibrium spin polarization in non-magnetic Si. The ferromagnetic semiconductor EuO has been justified as a promising candidate for electrical spin injection into Si. Here, we report the first fabrication of the EuO(1 1 1)/Si(1 1 1) structure – a magnetic material with a polar heterointerface – employing a special synthetic procedure. Structural characterization proves an atomically sharp interface and monocrystalline quality of the films while magnetic measurements match the bulk properties of EuO. [ABSTRACT FROM AUTHOR]

The idea of spin injection into graphene by proximity effect is an interesting and timely topic. Furthermore, using 2D materials to induce such an effect instead of bulk materials is a recent targeted route towards better solution for 2D spintronics. We report on first-principle calculations of the spin-dependent properties in graphene induced by its interaction with a nearby half-metallic Cr 2 C (2D MXene). Spin polarization can be induced in graphene by the interfacial proximity of half-metallic Cr 2 C ferromagnet. The average spin polarization in the graphene can reach to 74%, which is much larger than the graphene/magnetic metal or graphene/magnetic insulator heterostructures. The observed spin splitting comes from the interaction between C- p z and Cr-3 d states. Except for a n -doped feature by charge transfer, the linear dispersion of Dirac cone is modified with a band gap opening of 80 meV between the bonding and antibonding states. Especially, the electronic structure, charge transfer and gap opening are shown to depend strongly on the graphene/Cr 2 C interlayer, which can be tailored by strain. Moreover, a strain modulated spin filter based on the graphene/Cr 2 C heterostructure has been proposed. These results strongly revive this novel system as a candidate for future graphene-based spintronic devices. [ABSTRACT FROM AUTHOR]

Hydrogen is a green energy carrier with high enthalpy and zero environmental pollution emission characteristics. Photocatalytic hydrogen evolution (HER) is a sustainable and promising way to generate hydrogen. Despite of great achievements in photocatalytic HER research, its efficiency is still limited due to undesirable electron transfer loss, high HER over-potential and low stability of some photocatalysts, which lead to their unsatisfied performance in HER and anti-photocorrosion properties. In recent years, many spintronics works have shown their enhancing effects on photo-catalytic HER. For example, it was reported that spin polarized photo-electrons could result in higher photocurrents and HER turn-over frequency (up to 200%) in photocatalytic system. Two strategies have been developed for electron spin polarizing, which resort to heavy atom effect and magnetic induction respectively. Both theoretical and experimental studies show that controlling spin state of OH radicals in photocatalytic reaction can not only decrease OER over-potential (even to 0 eV) of water splitting, but improve stability and charge lifetime of photocatalysts. A convenient strategy have been developed for aligning spin state of OH by utilizing chiral molecules to spin filter photo-electrons. By chiral-induced spin filtering, electron polarization can approach to 74%, which is significantly larger than some traditional transition metal devices. Those achievements demonstrate bright future of spintronics in enhancing photocatalytic HER, nevertheless, there is little work systematically reviewing and analysis this topic. This review focuses on recent achievements of spintronics in photocatalytic HER study, and systematically summarizes the related mechanisms and important strategies proposed. Besides, the challenges and developing trends of spintronics enhanced photo-catalytic HER research are discussed, expecting to comprehend and explore such interdisciplinary research in photocatalytic HER. [ABSTRACT FROM AUTHOR]

Co 2 CrAl/GaAs slabs have been constructed to study the electronic structure and magnetic properties by Structeditor program implemented in WIEN2k Code. GGA and LDA parameterizations have been used for exchange correlation functions. The density of states, structure and magnetic parameters have been studied and analyzed. Co 2 CrAl/GaAs (1 1 1) surface shows 80% spin polarization within LDA parameterizations. Variation in spin polarization with varying projections is observed due to different surface terminations and bond length. Effect of capping layers of Au and Cu on the magnetic moment and spin polarization of Co 2 CrAl/GaAs for different surface projections has been studied. The DOS indicates that the spin polarization has enhanced for all surface projections within the GGA approximation for both capping layers. The magnetic moment also varies from the bulk value of 3µ B in Co 2 CrAl/GaAs surfaces. [ABSTRACT FROM AUTHOR]

Fine-tuning magnetic states by understanding topological frustration inducing magnetic mechanism should allow greater flexibility for the design of graphene-based spintronics. Based on first-principles calculations, it is predicted that bowtie-shaped graphene nanoflake (GNF) is of spin-polarized ground state exhibiting antiferromagnetic (AFM) ordering between two individual triangular GNFs. It is demonstrated that strength of antiferromagnetic coupling of both symmetric and asymmetric bowtie-shaped GNF displays strong zero-energy-state-orientated behavior due to non-trivial nature of topological frustration, with implications for designing graphene nanostructures with predefined magnetic states. It also proposes a specific example of structures that can serve as nanoscale molecular logic gates composed by asymmetric bowtie-shaped GNFs units, which augment the special antiferromagnetic function through structural configuration of multi-bowtie-shaped GNFs. [ABSTRACT FROM AUTHOR]

We demonstrate the spin filtering effect in Co|MgO|TiO x |graphene junctions and a large negative spin polarization in graphene at room temperature. By systematically introducing Ti (TiO x ) clusters to the exfoliated few-layer graphene, we confirm that the Ti (TiO x ) clusters will increase the charged impurity scattering and lead to a decreased momentum scattering time and an abnormal Gaussian broadening effect. However, the spin relaxation mechanism is not significantly affected, indicating that the spin relaxation mechanism of graphene will not be affected by the atomic-scale Ti (TiO x ) clusters induced charged impurity scattering. [ABSTRACT FROM AUTHOR]

By employing the separated spin evolution quantum hydrodynamic model, non-linear evolution of obliquely propagating spin electron acoustic wave (SEAW) is presented. The solitary structures of SEAW is investigated through the Korteweg–de Vries (KdV) equation derived using reductive perturbation method. From the first order perturbations we derive the dispersion relation of SEAW and find that both the spin polarization and the propagation angle reduce the phase velocity while the electron streaming enhances it. Using small amplitude approximation, the solitary structure of SEAW is analyzed and the effects of spin polarization, propagation angle and electron streaming on the SEA soliton are studied. Our numerical results demonstrate that the spin polarization and the propagation angle play a balancing act on the soliton structures. The possible applications of our investigation to the astrophysical environments like white dwarfs is also discussed. [ABSTRACT FROM AUTHOR]

The spin polarising properties of the iron oxide magnetite ( Fe 3 O 4 ) make it attractive for use in spintronic devices, but its sensitivity to compositional and structural variations make it challenging to prepare reliably. Infrared microspectroscopy and modelling are used to determine the spatial variation in the chemical composition of three thin films of iron oxide; one prepared by pulsed laser deposition (PLD), one by molecular beam epitaxy (MBE) deposition of iron whilst simultaneously flowing oxygen into the chamber and one by flowing oxygen only once deposition is complete. The technique is easily able to distinguish between films which contain metallic iron and different iron oxide phases as well as spatial variations in composition across the films. The film grown by post-oxidising iron is spatially uniform but not fully oxidised, the film grown by simultaneously oxidising iron showed spatial variation in oxide composition while the film grown by PLD was spatially uniform magnetite. [ABSTRACT FROM AUTHOR]

[Display omitted] • Se bivacancy cause semiconductor-half-metal transition with 100% spin polarization. • The direction of easy magnetization axes remain unchanged with Se vacancies. • MAE and Curie temperatures of Se vacancy defective monolayers increase with strain. • The direction of easy magnetization axes remains unchanged under strain. • A larger doping range is obtained by Se vacancies for pure spin-polarized current. • Defective VSe 2 monolayer is highly promising for new spintronic nanodevices. As a room-temperature van der Waals intrinsic ferromagnetic semiconductor, monolayer VSe 2 was studied extensively for both fundamental research and potential low-dimensional semiconductor spintronic applications. Defects are inevitably encountered and can affect the electronic, magnetic, and transport properties during the experimental synthesis of VSe 2 monolayer. However, the study of defects in VSe 2 monolayer is still lacking at the atomic level. Here, the electronic, magnetic, and transport properties of VSe 2 monolayer with Se vacancies are investigated by first-principles density-functional method. With the direction of easy magnetization axes unchanged, introducing Se vacancies results in the decrease of magnetic anisotropy energy and Curie temperature, which can be further increased by applying in-plane biaxial strain. After Se vacancies are introduced, the conductivity of the system decreases, while the larger doping range is obtained for pure spin-polarized current. The transition from semiconductor to half-metal with 100% spin polarization can be realized by introducing Se bivacancy in VSe 2 monolayer, which is highly promising for next-generation spin filter, spin injection and spin transport nanodevices. PACS: 61.72.jd; 73.20.At; 75.50.Pp; 75.70.Ak [ABSTRACT FROM AUTHOR]

We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well. [ABSTRACT FROM AUTHOR]

We have investigated the electronic states and spin polarization of half-metallic ferromagnet CrO 2 (100) epitaxial films by bulk-sensitive spin-resolved photoemission spectroscopy with a focus on non-quasiparticle (NQP) states derived from electron-magnon interactions. We found that the averaged values of the spin polarization are approximately 100% and 40% at 40 K and 300 K, respectively. This is consistent with the previously reported result [H. Fujiwara et al., Appl. Phys. Lett. 106 , 202404 (2015).]. At 100 K, peculiar spin depolarization was observed at the Fermi level ( E F ), which is supported by theoretical calculations predicting NQP states. This suggests the possible appearance of NQP states in CrO 2 . We also compare the temperature dependence of our spin polarizations with that of the magnetization. [ABSTRACT FROM AUTHOR]

Control of organic interfacial spin polarization is crucial in organic spintronics. Based on ab initio theory, here we proposed a spin selection at organic interface via anchoring group by adsorbing an organic molecule onto Ni(111) surface. The results demonstrate that either a positive or negative interfacial spin polarization may be obtained by choosing different anchoring groups. The orbital analysis via the projected density of states shows that the interfacial spin polarization is sensitive to the hybridization of the outer orbital of the anchoring atom as well as its energy relative to the d orbital of the ferromagnetic atom. The work indicates a feasible way to realize spin selection at the organic spinterface by anchoring group. [ABSTRACT FROM AUTHOR]

Ferromagnetism in half-metallic two-dimensional material can lead to unique spintronics application. In this work, Cr-doped single-layer graphdiyne is predicted to be two-dimensional ferromagnetic semiconductor, and Mn-doped graphdiyne is predicted to be ferromagnetic conductor using first-principle calculations. Cr and Mn adatoms could be stabilized on the corner sites of graphdiyne sheet due to high migration barriers. The currents through Cr- and Mn-doped graphdiyne possess spin polarization feature. For Cr-doped graphdiyne system, the transmission polarization is up to 100% and could be controlled by the gate voltage. Cr-/Mn-doped graphdiyne with spin-polarized semiconductor/conductor properties could be promising material for combined usage in spintronics application. [ABSTRACT FROM AUTHOR]

Electronic transport through a protein-like single-helical molecule is theoretically studied. By introducing an additional terminal to couple to the molecule, we construct a two-channel mesoscopic circuit, and then calculate the charge and spin currents in the two drain terminals. It is found that in one drain terminal, one pure spin current has an opportunity to appear without any accompanying charge current. Besides, the polarization direction of the spin current can be inverted. With respect to the current in the other drain, it is also found to be highly polarized, with its polarization direction different from that in the other terminal. These results suggest that the protein-like single-helical molecule is a promising candidate for building the two-channel setup in spintronics. [ABSTRACT FROM AUTHOR]

We studied the effect of a defect of superlattice on the spin and valley dependent transport properties in silicene, where there is an abnormal barrier in height. It is found that the transmission resonance is greatly suppressed, because the symmetry of superlattice structure is destroyed by the defect. The spin-up and spin-down electrons near the K and K ′ valleys are dominated by different effective superlattices and defects. Therefore, the conductances are strongly dependent on the spin and valley of electron. By adjusting the defect strength properly, the spin and valley polarizations could be dramatically enhanced in a wide energy region. Furthermore, the result suggests an application of the structure as a defect-controlled switch. [ABSTRACT FROM AUTHOR]

Spin polarization properties of thiophene molecule adsorbed to the edge of zigzag graphene nanoribbon (GNR) are studied based on density functional theory calculations. It is shown that there is charge transfer between the thiophene molecule and the zigzag GNR, which changes the bond lengths of the thiophene molecule. Another consequence of the charge transfer is the spontaneous spin polarization of the thiophene molecule. The mechanism of the spontaneous spin polarization is also discussed based on the analysis of the density of states. It is found that the p orbitals of the carbon atoms and the sulfur atom in thiophene molecule become spin split near the Fermi energy, so preferential fillings of the spin-splitted p orbitals make the thiophene molecule spin polarized. This spontaneous spin polarization of thiophene molecules adsorbed to the zigzag GNR could be a new route to graphene-based organic spintronic devices. [ABSTRACT FROM AUTHOR]

It is important to spintronics to achieve fully-spin-polarized magnetic materials that are stable and can be easily fabricated. Here, through systematical density-functional-theory investigations, we achieve high and even full spin polarization for carriers in the ground-state phase of CrTe by applying tensile biaxial stress. The resulting strain is tensile in the xy plane and compressive in the z axis. With the in-plane tensile strain increasing, the ferromagnetic order is stable against antiferromagnetic fluctuations, and a half-metallic ferromagnetism is achieved at an in-plane strain of 4.8%. With the spin-orbit coupling taken into account, the spin polarization is equivalent to 97% at the electronic transition point, and then becomes 100.0% at the in-plane strain of 6.0%. These make us believe that the full-spin-polarized ferromagnetism in this stable and easily-realizable hexagonal phase could be realized soon, and applied in spintronics. [ABSTRACT FROM AUTHOR]

A new carbon-based morphology, graphene spirals (GSs), possesses interesting electronic features with inter-layer interaction and intra-layer interaction, ascribed to its unique intra-system electronic coupling states. The spin-polarization and the tunneling patterns of GSs manipulated by the periphery structural modification were investigated in detail with first principle calculations. The spin-polarized edge-states and transport properties can be enhanced and modulated by the constructed trigonal corners efficiently. Governed by the position and the number of the introduced carbon-hexagons, diverse spin-polarized tunneling states and various edge-state couplings between central spiral structure and electrodes can be achieved. More significantly, the contribution of inter-layer tunneling and intra-layer tunneling can be dominated by the topological signatures of GSs. For all spiral conformations, inter-layer tunneling always contributes to the net spin-dependent current. Remarkably, when carbon-hexagons are introduced at some typical positions, the complete spiral current along spiral construction is induced by intra-layer tunneling. Those features provide a good tunability of spin-polarized couplings and tunneling patterns in GSs for spintronic applications. [ABSTRACT FROM AUTHOR]

The properties of Re-doped single-layer MoS 2 have been investigated by density functional theory (DFT). Four doping configurations are considered, and all of them show large spin polarization. We ascribe the spin polarization of these systems to the single occupation of split 5d orbitals under different crystal fields and the charge transfer from Re atom to single-layer MoS 2 . Furthermore, our results show that ferromagnetic ground states are favored in these doped systems when different spin orders are considered. These results would be helpful for future MoS 2 -based spintronic devices. [ABSTRACT FROM AUTHOR]

The electronic structure and magnetic property of Mn 2 Co 1−x Cr x Al (x = 0.25, 0.5, 0.75) have been investigated based on density functional theory calculations. The results indicate that both Mn 2 Co 0.75 Cr 0.25 Al and Mn 2 Co 0.25 Cr 0.75 Al are half metals with a half-metallic gap of 0.07 eV and 0.08 eV, respectively. In addition, Mn 2 Co 0.75 Cr 0.25 Al can maintain the half-metallicity even when the crystal structure is disordered, while the half-metallicity of Mn 2 Co 0.25 Cr 0.75 Al is destroyed once the disorder appears. For Mn 2 Co 0.75 Cr 0.25 Al, the half-metallic gap of the Cr-Co disordered structure is 0.14 eV, suggesting a great potential to be a good candidate for spintronic application. [ABSTRACT FROM AUTHOR]

Structural, electronic and magnetic properties of the nitrogenated silicene monolayer have been throughly investigated using first-principles calculations. Pristine silicene single layer adopts a low-buckled structure and presents zero-gap semimetal character with Dirac cone structure at K point. N-functionalized silicene monolayers exhibit strong asymmetry of the band structure. Both spin channels exhibit metallic character in a full-nitrogenated layer, while the half-nitrogenation induces the half-metallicity with a perfect spin polarization of 100% at the vicinities of the Fermi level. Our simulations assert that the spin-gapless semiconducting and magnetic semiconducting behaviors may be obtained by applying proper tensile strains to the half-nitrogenated single layer. Significant magnetization of the silicene monolayer is also produced by the N-based functionalization, where total magnetic moments of 2.74 and 1.00 (μ B) are obtained in the full- and half-nitrogenated layer, respectively. In addition, the magnetic ground states and their corresponding band structures will be also discussed. Interesting electronic and magnetic properties suggest that the nitrogenation of silicene monolayer may be an effective method to form novel 2D materials for spintronic applications. [ABSTRACT FROM AUTHOR]

A succinct summary of various physical characteristics of halide double perovskites Cs 2 KXCl 6 : (X = Ti and V) has been summarized using Density Functional Theory (DFT), as applied in WIEN2k simulation code. These material's stability in Fm-3 m cubic symmetry is confirmed by structural optimization, tolerance factor and elastic parameters. The electronic band structures and density of states calculated using GGA and G G A + m B J show that these materials are semiconducting in spin down channels. The crystal field splitting of d-orbitals is used to explain the semiconducting ferromagnetic nature of these Ti- and V- based halide double perovskites. The ferromagnetic character of these double perovskites is suggested by the optimization and asymmetric DOS across Fermi level. We have also discussed about the origins of half-metallic bandgap and magnetism. The total magnetic moments of the Ti and V-based double perovskites are 1 μ B and 2 μ B, respectively, with the transition metal atoms (Ti/V) accounting for the major contributions. At the Fermi level, these double perovskites have 100% spin polarization, indicating that they could be used in spintronics. • The DFT studies confirm the structural stability of double perovskites(DPs) Cs 2 KXCl 6 : X = Ti, V in ferromagnetic state at low temperature. • Structural optimization and tolerance factor confirms the structural stability of the DPs. • The DPs shows half-metallic nature in both GGA and mBJ calculations. The half-metallic character of the DPs is also supported by their integral magnetic moments. • The mechanical parameters shows Cs 2 KVCl 6 as brittle while as Cs 2 KTiCl 6 as ductile. • These DPs exhibit 100% spin polarization at the Fermi level suggests that they might be used in spintronics. • The findings may be beneficial for experimentalists to prepare these type of DPs in laboratories for commercial uses. [ABSTRACT FROM AUTHOR]

The inverse spin Hall effect (ISHE) has been detected and separated from spin rectification effect (SRE) by inverting spin injection direction in metallic system. This work is based on the relation between the two effects and the spin injection direction: the sign of V ISHE changes because of the reversing direction of spin injection while the V SRE is independent on it. According to the different voltage signals before and after the spin injection inverted, the pure V ISHE and V SRE are calculated by utilizing the method of addition and subtraction. The signals can be separated in a wide range of frequency and power. [ABSTRACT FROM AUTHOR]

We review experimental and theoretical study of dynamic electron spin injection in semiconductor nanostructures. The review is focused on spin-dependent recombination and spin-dependent tunneling phenomena leading to a photoluminescence polarization. These phenomena lead to fundamentally different dynamic spin polarization of the electrons in contrast to the polarization in a steady state under, stationary spin injection or in the case of s(p)–d exchange interaction in typical metal/ferromagnetic or semiconductor/ferromagnetic hybrid structures. Growing attention to the mechanisms leading to dynamic spin polarization is the result of (i) the possibility to precisely control the process by means of external gating and (ii) rich and still not well understood physics of the time dependent processes in semiconductor nanostructures. Moreover, non stationary processes allow to highlight the role of Coulomb correlations in the formation of carriers spin polarization. The described physics of dynamic polarization is expected in a variety of systems including semiconductor-QW based heterostructures, nanoplatelets and novel 2D materials. In the first part of the review the spin-dependent recombination via deep paramagnetic centers is discussed, which allows to obtain an unusually high spin polarization for carriers in nonmagnetic semiconductor alloys. The second part deals with the dynamic spin polarization in hybrid heterostructures semiconductor quantum well — magnetic dopant layer. Finally, possible implementation of the dynamic spin polarization in spin lasers is addressed. We also shortly discuss such perspective area as spin injection in microwave and terahertz frequency. We conclude with some open questions and other promising implementation of discussed effect which we consider very important for further development of spintronics. • The review is focused on spin-dependent recombination and spin-dependent tunneling. • A study of dynamic electron spin injection in nanostructures is discussed. • The described physics of dynamic polarization is expected in a variety of systems. • The considered phenomena are sensitive to electron correlations. • The obtained results open the possibility to effective and fast control of PL polarization. [ABSTRACT FROM AUTHOR]