Direct epitaxial integration of the ferromagnetic semiconductor EuO with Si(1 1 1).

Facing physical limits to further development, modern electronics explores alternative approaches. One of the most promising routes is offered by spintronics employing spin degree of freedom. Silicon spintronics is especially important due to the central technological role of Si. This technology requires non-equilibrium spin polarization in non-magnetic Si. The ferromagnetic semiconductor EuO has been justified as a promising candidate for electrical spin injection into Si. Here, we report the first fabrication of the EuO(1 1 1)/Si(1 1 1) structure – a magnetic material with a polar heterointerface – employing a special synthetic procedure. Structural characterization proves an atomically sharp interface and monocrystalline quality of the films while magnetic measurements match the bulk properties of EuO. [ABSTRACT FROM AUTHOR]