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Direct measurements on electrical characteristics have been carried out in situ inside a scanning electron microscope using a multiple nanoprobe system on individual SnO2 capped ZnO nanowires (NWs) within a NW film on a Zn substrate. It is shown that while good Ohmic contacts can be made at Zn–ZnO NW and ZnO NW–SnO2 cap (when heavily doped with Zn) junctions, the overall I-V characteristics of the Zn–ZnO–SnO2 junction system differ significantly among different NWs, suggesting doping inhomogeneity in the NW film. [ABSTRACT FROM AUTHOR]

The authors demonstrated an investigation of the real-time growth of ZnO nanosheets via in situ observation in an environmental scanning electron microscope. It was found that ZnO nanosheets were grown in a two-stage process: [formula]-oriented nanowires were grown first, and then ZnO nanosheets grew perpendicularly on the parent nanowires along the [0001] axis. The authors’ results revealed that the change of the ZnO growth direction from [formula] (a axis) to [0001] (c axis) can be achieved by control of the growth temperature. [ABSTRACT FROM AUTHOR]

In situ electromigration studies on polycrystalline gold nanowires are performed using a high resolution scanning electron microscope. Simultaneously, the resistance of the gold nanowires is recorded during current stressing. The nanowires are prepared by electron beam lithography (EBL) and subsequent thermal evaporation of gold onto the resist mask. In a further EBL-process contact leads are attached to the gold nanowires to determine resistance changes of better than 5×10-4. The authors observe small resistance oscillations which occur during the scanning process. They show that these oscillations are due to the scanning process of the electron beam rather than founded on periodic changes of the void morphology. [ABSTRACT FROM AUTHOR]