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Measuring the electrical characteristics of individual junctions in the SnO2 capped ZnO nanowire arrays on Zn substrate.
- Source :
-
Applied Physics Letters . 1/21/2008, Vol. 92 Issue 3, p033102. 3p. 1 Chart, 3 Graphs. - Publication Year :
- 2008
-
Abstract
- Direct measurements on electrical characteristics have been carried out in situ inside a scanning electron microscope using a multiple nanoprobe system on individual SnO2 capped ZnO nanowires (NWs) within a NW film on a Zn substrate. It is shown that while good Ohmic contacts can be made at Zn–ZnO NW and ZnO NW–SnO2 cap (when heavily doped with Zn) junctions, the overall I-V characteristics of the Zn–ZnO–SnO2 junction system differ significantly among different NWs, suggesting doping inhomogeneity in the NW film. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 92
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 28844177
- Full Text :
- https://doi.org/10.1063/1.2837060