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Over the last two decades, Electron Energy Loss Spectroscopy (EELS) imaging with a scanning transmission electron microscope has emerged as a technique of choice for visualizing complex chemical, electronic, plasmonic, and phononic phenomena in complex materials and structures. The availability of the EELS data necessitates the development of methods to analyze multidimensional data sets with complex spatial and energy structures. Traditionally, the analysis of these data sets has been based on analysis of individual spectra, one at a time, whereas the spatial structure and correlations between individual spatial pixels containing the relevant information of the physics of underpinning processes have generally been ignored and analyzed only via the visualization as 2D maps. Here, we develop a machine learning-based approach and workflows for the analysis of spatial structures in 3D EELS data sets using a combination of dimensionality reduction and multichannel rotationally invariant variational autoencoders. This approach is illustrated for the analysis of both the plasmonic phenomena in a system of nanowires and in the core excitations in functional oxides using low loss and core-loss EELS, respectively. The code developed in this manuscript is open sourced and freely available and provided as a Jupyter notebook for the interested reader. [ABSTRACT FROM AUTHOR]

Stimulated electron energy loss and gain spectroscopy (sEELS and sEEGS) are used to image the nearfield of the bonding and antibonding localized surface plasmon resonance modes in nanorod dimers. A scanning transmission electron microscope equipped with an optical delivery system is used to simultaneously irradiate plasmonic nanorod dimers while electron energy loss and gain spectra of the active plasmons are collected. The length of the nanorod dimer is varied such that the bonding and antibonding modes are resonant with the laser energy. The optically bright bonding mode is clearly observed in the resonant sEEG spectrum images and, consistent with spontaneous EELS, no direct evidence of the hot spot is observed in sEEG. s-polarized irradiation does not stimulate the energy gain of the optically dark antibonding mode. However, when phase retardation is introduced by tilting the longitudinal axis, the otherwise dark antibonding mode becomes sEEG active. [ABSTRACT FROM AUTHOR]

High-angle annular dark-field (HAADF) imaging and electron energy loss spectroscopy (EELS) in a Cs-corrected scanning transmission electron microscope were utilized to analyze the interfacial atomic structure of InAs/GaSb superlattices (SLs) grown by metalorganic chemical vapor deposition (MOCVD) on InAs substrates. Despite high growth temperature, narrow interface (IF) widths of less than 2.5 monolayers (MLs) and 3.8 MLs were extracted from HAADF and EELS, respectively, indicating that the IF quality of MOCVD-grown InAs/GaSb SLs is comparable to those grown by molecular beam epitaxy. GaAs-type IFs are considered to account for the narrow IF width. In addition, GaSb-on-InAs IFs were found to be sharper and more strained than InAs-on-GaSb IFs, which is correlated with the special gas supply and switching sequence during MOCVD growth. The strain profile deduced from the HAADF image suggests that little Sb is incorporated into InAs sublayers and 7% In is incorporated into GaSb sublayers. [ABSTRACT FROM AUTHOR]

Images and spectra obtained from aberration corrected scanning transmission electron microscopes (STEM) are now used routinely to quantify the morphology, structure, composition, chemistry, bonding, and optical/electronic properties of nanostructures, interfaces, and defects in many materials/biological systems. However, obtaining quantitative and reproducible atomic resolution observations from some experiments is actually harder with these ground-breaking instrumental capabilities, as the increase in beam current from using the correctors brings with it the potential for electron beam modification of the specimen during image acquisition. This beam effect is even more acute for in situ STEM observations, where the desired outcome being investigated is a result of a series of complicated transients, all of which can be modified in unknown ways by the electron beam. The aim in developing and applying new methods in STEM is, therefore, to focus on more efficient use of the dose that is supplied to the sample and to extract the most information from each image (or set of images). For STEM (and for that matter, all electron/ion/photon scanning systems), one way to achieve this is by sub-sampling the image and using Inpainting algorithms to reconstruct it. By separating final image quality from overall dose in this way and manipulating the dose distribution to be best for the stability of the sample, images can be acquired both faster and with less beam effects. In this paper, the methodology behind sub-sampling and Inpainting is described, and the potential for Inpainting to be applied to novel real time dynamic experiments will be discussed. [ABSTRACT FROM AUTHOR]

Nanoscale thermometry, an approach based on non-invasive, yet precise measurements of temperature with nanometer spatial resolution, has emerged as a very active field of research over the last few years. In transmission electron microscopy, nanoscale thermometry is particularly important during in situ experiments or to assess the effects of beam induced heating. In this article, we present a nanoscale thermometry approach based on electron energy-loss spectroscopy in a transmission electron microscope to measure locally the temperature of silicon nanoparticles using the energy shift of the plasmon resonance peak with respect to the zero-loss peak as a function of temperature. We demonstrate that using non-negative matrix factorization and curve fitting of stacked spectra, the temperature accuracy can be improved significantly over previously reported manual fitting approaches. We will discuss the necessary acquisition parameters to achieve a precision of 6 meV to determine the plasmon peak position. [ABSTRACT FROM AUTHOR]

Increasing the process temperature in CO/NH3 plasma etching has been investigated to suppress an etch stop in high-density magnetic tunnel junction stack (MTJ stack) patterning with a Ta mask. In a previous study, the occurrence of an etch stop was observed when using a 100 nm space pattern; specifically, the etching depth was unchanged with the 100 nm space pattern when the etching time was increased, although when wider spaces were used, the etching depth increased proportionally. In this study, differences in the etch stop depth with 100 nm space patterns were examined by changing the electrode temperature from 120 to 300 °C. The etch stop depth became deeper as the electrode temperature was increased and it was found that a high-temperature CO/NH3 process was an effective way to prevent the etch stop effect. However, at 300 °C, the MTJ stack's thickness was observed to expand, which may induce a deterioration of the junction's magnetic properties. A scanning transmission electron microscope image and an energy dispersive x-ray spectroscopy image of the MTJ stack revealed that nitridation of the MTJ stack was the reason of its expansion in thickness. Moreover, pure N2 plasma irradiation of the MTJ stack clearly indicated that this thickness expansion occurred for an electrode temperature of over 265 °C. Finally, the results demonstrate that, for a CO/NH3 process with an electrode temperature of 250 °C, it is possible to etch a 52-nm-thick MTJ stack without either etch stop or film thickness expansion occurring. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenides such as molybdenum disulfide (MoS2) may see service in the heart of next-generation nanoelectronic devices, where highly localized power dissipation can produce nontrivial temperature gradients over nanometer-scale distances. Here, we demonstrate that MoS2 is a promising target for plasmon energy expansion thermometry (PEET), a high-spatial resolution temperature mapping technique employed in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). We first use a calibrated, commercial MEMS-style TEM sample heater chip to measure the temperature dependence of the MoS2 bulk plasmon. We corroborate the chip's temperature calibration with Raman thermometry and determine the bulk thermal expansion coefficient (TEC) of MoS2 in the temperature range of 300–1100 K. Applying this TEC value to PEET measurements on a suspended MoS2 flake, we map 70–90 K/μm temperature gradients with a submicrometer spatial resolution. [ABSTRACT FROM AUTHOR]

At present transmission electron energy loss spectrum (EELS) analysis is only carried out in dedicated research instruments such as transmission electron microscopes (TEMs) or scanning transmission electron microscopes. This article presents a new design of second-order geometric aberration corrected EELS spectrometer attachment using split plates, which enables conventional scanning electron microscopes (SEMs) to provide TEM-like EELS spectra. Correction to a third-order dominant geometric aberration pattern has been achieved, which indicates that most of the second-order geometric aberration component is eliminated. This second-order aberration corrected spectrometer attachment design can enable SEMs to provide transmission EELS spectrums. [ABSTRACT FROM AUTHOR]