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GaN nanowires are potential candidates for use in scanning probe microscopy due to their well-defined, reproducible, geometric shapes, their hardness, and their light guiding properties. We have developed and investigated probes for high resolution atomic force microscopy and scanning tunneling microscopy utilizing GaN nanowires as probes. The nanowires are n-doped and the morphology of the nanowires has been tailored for scanning probe microscopy by growing them with a sharp tip for measurements and high thickness for robustness. The individual GaN nanowires were removed from their growth substrate and attached onto commercial atomic force microscopy cantilevers or etched tungsten wires for scanning tunneling microscopy. A standard scanning electron microscope equipped with a nanoprobe, a focused ion beam column and a gas injection system was used to locate, transfer, and attach the nanowires. We evaluated the properties of the GaN probes on different substrates including HOPG, Au, SiO2, InAs, and GaAs. We demonstrate both atomic force microscopy and scanning tunneling microscopy measurements with single atomic layer resolution and evaluate the robustness of the tips by monitoring them before and after scanning. Finally, we explore the use of the tips for scanning tunneling spectroscopy demonstrating that reliable results, which can reveal information on the electronic properties of the surface-tip system, are obtainable. The fundamental properties of these probes, which are demonstrated in this work, show promise for future use of the probes in exploring semiconductor-semiconductor tunneling junctions at the nanoscale as well as for other scanning probe techniques where high resolution is required. [ABSTRACT FROM AUTHOR]

Conductive atomic-force microscopy (C-AFM) writing is attracting attention as a technique for clarifying the switching mechanism of resistive random-access memory by providing a wide area filled with filaments, which can be regarded as one filament with large radius. The writing area on a nickel-oxide (NiO) film formed by conductive atomic-force microscopy was observed by scanning electron microscope, and a correlation between the contrast in a secondary-electron image (SEI) and the resistance written by C-AFM was revealed. In addition, the dependence of the SEI contrast on the beam accelerating voltage (Vaccel) suggests that the resistance-change effect occurs near the surface of the NiO film. As for the effects of electron irradiation and vacuum annealing on the C-AFM writing area, it was shown that the resistance-change effect is caused by exchange of oxygen with the atmosphere at the surface of the NiO film. This result suggests that the low-resistance and high-resistance areas are, respectively, p-type Ni1+δO (δ < 0) and insulating (stoichiometric) or n-type Ni1+δO (δ ≥ 0). [ABSTRACT FROM AUTHOR]

The spin Hall angle (SHA) represents the efficiency of the conversion between spin current into charge current and vice-versa. In this paper, we report the experimental detection of large enhancement of the effective SHA in heterostructures of yttrium iron garnet (YIG)/[Pt-Ag]/Pt and YIG/[Pt-Ag], when compared with measurements in YIG/Pt bilayers. The notation [Pt-Ag] represents the nanoparticles island formation of Ag in the Pt film. In order to investigate the role played by the metallic nanoparticles in the spin-to-charge conversion process, we carried out microwave spin pumping measurements in the following samples: YIG/Ag(3 nm)/Pt(6 nm), YIG/[Pt(3 nm)-Ag(3 nm)]/Pt(3 nm) and YIG/[Pt(6 nm)-Ag(3 nm)]. By means of high-resolution scanning electron microscope (HR-SEM) investigation, we confirmed that layers of Ag exhibit islands nanoparticle structures when grown on the surface of the Pt, which are characterized by the Volmer-Weber mode. The spin pumping results show that the Ag nanoparticles can enhance the charge current created by the inverse spin Hall effect (IISHE) up to three times larger than the single Pt layer. Also, by analyzing atomic force microscopy (AFM) images, obtained for samples with different thickness of the Ag layer, we conclude that the roughness plays an important role in the enhancement of the IISHE. Therefore, taking advantage of poor wetting properties of Ag over Pt layer, it was possible to create nanoscopic particles of Ag randomly grown in the Pt layer. The nanoparticles serve as nanoscopic molds to locally increase the SHA. This feature represents an improvement in searching more efficient methods of the spin-to-charge conversion and opens up the possibility of tuning the SHA by controlling the size and shape of the Ag nanoparticles. [ABSTRACT FROM AUTHOR]

Presents information on a study which applied a variant of the scanning capacitance microscope which is based on the atomic force microscope, to determine charge storage in a nitride-oxide-silicon medium. Methods; Results; Discussion.

Focuses on a study concerning the radical etching of bromine and the material system of indium, gallium, arsenic and aluminum. Discussion of the process of photochemical etching; Use of atomic force microscope and scanning electron microscope; Effect of the desorption process on etching.

Presents a study that examined yttrium compound superconducting thin films by using laser-deposition. Information on the structure and morphology of the films; Discussion on the surface morphology and electron channeling patterns of the thin films; Use of scanning electron microscope and atomic force microscope.

Based on the characterization by Atomic Force Microscopy, we report that the mechanical property of single chondrocytes has dependency on the strain-rates. By comparing the mechanical deformation responses and the Young's moduli of living and fixed chondrocytes at four different strain-rates, we explore the deformation mechanisms underlying this dependency property. We found that the strain-rate-dependent mechanical property of living cells is governed by both of the cellular cytoskeleton and the intracellular fluid when the fixed chondrocytes are mainly governed by their intracellular fluid, which is called the consolidation-dependent deformation behavior. Finally, we report that the porohyperelastic constitutive material model which can capture the consolidation-dependent behavior of both living and fixed chondrocytes is a potential candidature to study living cell biomechanics. [ABSTRACT FROM AUTHOR]

Tuning of the Fermi level is investigated in graphene channels using two in-plane gates with significantly different-sized isolating gaps. While the n-type tuning was achievable in both schemes, the wide-gap device had an enhanced minimum drain current and less prominent current modulation than the narrow-gap device. In addition, further p-type tuning was not observed in the wide-gap device at negative gate biases. These phenomena indicated that both devices had distinct field-strength dependences and Fermi level tuning effects, which may be critical for the practical design of devices. [ABSTRACT FROM AUTHOR]

We report on AlxGa1-xN-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm2 area PD showed unbiased peak external quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10-8 A/cm2 at 10 V reverse bias. [ABSTRACT FROM AUTHOR]

Growth of large-scale graphene is still accompanied by imperfections. By means of a four-tip scanning tunneling and electron microscope (4-tip STM/SEM), the local structure of graphene grown on SiC(0001) was correlated with scanning electron microscope images and spatially resolved transport measurements. The systematic variation of probe spacings and substrate temperature has clearly revealed two-dimensional transport regimes of Anderson localization as well as of diffusive transport. The detailed analysis of the temperature dependent data demonstrates that the local on-top nano-sized contacts do not induce significant strain to the epitaxial graphene films. [ABSTRACT FROM AUTHOR]

Piezoelectrical actuators widely used in scanning devices for highly resolved displacement generation exhibit a number of known nonlinear effects as hysteresis and creep. This article describes an attempt to minimize those nonlinearities by recognizing the relation between scan range and voltage magnitude in a scanner specific function. In addition, by utilizing a strain gauge sensor system, a forward displacement correction is realized. The mathematical procedure behind the hysteresis correction is described in detail. The dependence of the higher order correction factors on parameters such as scan speed, scan range, or center position is studied carefully to extract their influence on the result. Finally, integral nonlinearities of about 1% are proven in experiments with an atomic force microscope. [ABSTRACT FROM AUTHOR]

An atomic force microscope that mounts on a sample stage of a scanning force microscope (SEMAFM) was developed. It was implemented for measurement of static mechanical properties of three-dimensional nanometric objects. The sample stage of the AFM was equipped with piezoelectric actuators enabling raster scanning as well as three degrees of freedom positioning with sub nm resolution and mm movable range. This enabled centering the AFM tip to the field of view of the SEM. Measurement of the spring constant and rupture force of three-dimensional nanometric structures was made possible. The SEMAFM also functioned as a conventional AFM. [ABSTRACT FROM AUTHOR]

The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5%, while it fails to recover after the plastic deformation at 5%. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices. [ABSTRACT FROM AUTHOR]

As an emerging optical material, graphene's ultrafast dynamics are often probed using pulsed lasers yet the region in which optical damage takes place is largely uncharted. Here, femtosecond laser pulses induced localized damage in single-layer graphene on sapphire. Raman spatial mapping, SEM, and AFM microscopy quantified the damage. The resulting size of the damaged area has a linear correlation with the optical fluence. These results demonstrate local modification of sp2-carbon bonding structures with optical pulse fluences as low as 14 mJ/cm2, an order-of-magnitude lower than measured and theoretical ablation thresholds. [ABSTRACT FROM AUTHOR]

We report on an in-situ monitoring of graphite oxidation using a high temperature environmental scanning electron microscope. A morphological transition is clearly identified around 1040 K between hexagonal pits at low temperatures and circular pits at high temperatures, with apparently no change in the kinetic law. A kinetic Monte Carlo model allows rationalizing these findings in terms of the competitive oxidation of armchair and zig-zag edge sites and provides an estimate of the rate laws associated to these two events. Extended to three dimensions, the model also explains the 'in-depth' transition between the stepwise hexagons and the hemispheres observed by atomic force microscopy. [ABSTRACT FROM AUTHOR]

A simple approach to fabricate two-dimensional nanobump arrays on silicon (Si) substrate is reported. In the process, a single 248 nm excimer laser pulse was applied on a self-assembled monolayer of 1.5-μm-diameter silica microspheres on a n-doped (100) Si wafer. After laser irradiation at a fluence of 300 mJ/cm2, a regular array of conical Si nanobumps surrounded by a ring shaped trench were fabricated. The structure of the nanobump arrays was characterized by scanning electron microscope, and atomic force microscope. The formed nanobumps were determined to be Si-based bumps with energy disperse spectroscopy. The mechanisms involved in the formation of nanobumps were discussed. [ABSTRACT FROM AUTHOR]

Mn1.56Co0.96Ni0.48O4 films with spinel structure were prepared on Al2O3 substrate by chemical solution deposition method. The microstructure of the films was studied by atomic force microscope and field-emission scanning electron microscope. The current-voltage characteristics showed Ohmic conductivity in the temperature range of 245–295 K. The conduction was described by a variable range hopping model for a parabolic density of states. The advantages of high characteristic temperature, as well as high transition temperature (201 K) between ferromagnetic and paramagnetic phases make the Mn1.56Co0.96Ni0.48O4 films very promising for infrared detection, especially for functional devices by integrating magnetic and electronic properties of the materials. [ABSTRACT FROM AUTHOR]

Direct imaging of atomic step morphologies and individual threading dislocations in on-axis epitaxial 4H-SiC surfaces is presented. Topographically sensitive electron images of the crystalline surfaces were obtained through forescattered electron detection inside a conventional scanning electron microscope. This technique, termed electron channeling contrast imaging (ECCI), has been utilized to reveal the configuration of highly stepped, homoepitaxial 4H-SiC films grown on 4H-SiC mesa structures. Individual threading dislocations have been consistently imaged at the core of spiral atomic step morphologies located on the 4H-SiC surfaces. The ability of ECCI to image atomic steps was verified by atomic force microscopy. [ABSTRACT FROM AUTHOR]

We describe a nanolithography process for a polymethylmethacrylate (PMMA) surface using scanning contact atomic force microscopy. Parallel furrows were scribed with a pyramidal silicon tip using the same scan mechanism as used to image samples. The PMMA was first electron beam irradiated using a scanning electron microscope and developed. The topography formed is reproducible and predictable. Material from the region where the tip scribes is moved to nearby regions, and aligned, elongated PMMA fragments are seen to decorate the valleys between furrows. [ABSTRACT FROM AUTHOR]

The simultaneous presence of hexagonal and quadratic arrangements of polystyrene microspheres in the top layers of polystyrene and gold-polystyrene composite colloidal crystals has been evidenced by both atomic force microscopy and scanning electron microscopy. It is thought that the formation of layers with the two different packing modes is in agreement with the phase transformations found in systems with confined geometries. The results of this study are relevant to the fabrication of high quality photonic crystals. [ABSTRACT FROM AUTHOR]

A characterization device was developed for nanomechanical testing on one-dimensional micro/nanostructures. The tool consists of a nanomanipulator, a three-plate capacitive transducer, and associated probes, and is operated inside a scanning electron microscope. The transducer independently measures force and displacement with micronewton and nanometer sale resolutions, respectively. Tensile testing of a polyaniline microfiber (diameter ∼1 μm) demonstrated the capabilities of the system. Engineering stress versus strain curves exhibited two distinct regions with different Young’s moduli. Failure at the probe-sample weld occurred at ∼67 MPa, suggesting that polyaniline microfibers exhibit a yield stress that is higher than most comparable bulk polymers. [ABSTRACT FROM AUTHOR]

Gold and tungsten were deposited on silicon wafer and/or glass substrates by using random incidence sputtering deposition and thermal vapor deposition techniques. Two-dimensional tungsten nanotriangle and gold nanoring arrays were obtained on the silicon wafer substrate and examined using scanning electron microscope and atomic force microscope analysis. The size of the equal tungsten nanotriangles is within 100 nm per side and 210 nm apart from each other. The size of gold nanorings is 220 nm diameter, 40 nm wide, 10 nm thick, and 560 nm apart from each other. No nanorings were found on the glass substrate. Mechanisms for the formation of nanoring arrays are discussed. [ABSTRACT FROM AUTHOR]

Examines the use of piezoresistive cantilevers with an atomic force microscope operating with a scanning electron microscope. Compatibility of the microscopes; Presentation of grating and integrated circuit images; Methods for the detection of lever deflection.

Examines the fabrication of electron-beam-deposited tips. Use of atomic force microscope integrated with a scanning electron microscope; Benefits of the integrated microscope; Reduction of the curvature radius.