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Thin films of silver were deposited on nonalkali glass substrates at substrate temperatures ranging from room temperature (28 °C) to 150, 200, 300, 400, and 500 °C at discharge pressures of 0.40, 1.20, and 2.00 Pa using direct current magnetron sputtering. On the basis of the measured cross-sectional and surface morphologies, crystallographic structures, and film properties, I discuss the dependence of the film structure and properties on the substrate temperature. The x-ray diffraction measurements showed that the <111> orientation was preferred for all deposition conditions. Scanning electron microscope observations revealed a microstructure of convex-shaped fine grains for a substrate at room temperature, while laterally growing, mound-shaped grains with flat-topped surfaces appeared at substrate temperatures of 400 and 500 °C. Atomic force microscopy also showed an increase in the lateral size and height of the mound-shaped structures with increasing substrate temperature. The lateral grain size evaluated from the areal particle density obtained from atomic force microscopy increased significantly with increasing substrate temperature, reaching 600–800 nm at a substrate temperature of 500 °C. The film stress also changed from compressive to tensile with increasing substrate temperature. The relative density, defined as the ratio of the deposited amount-of-substance to the physical-thickness, decreased significantly with increasing substrate temperature and, at a substrate temperature of 500 °C, was approximately 0.6 times as large as that obtained for thin films deposited at room temperature. The high surface diffusivity of the Ag adatoms induces the growth of laterally growing, mound-shaped grains. Besides, the energy accumulated in the thin films during sputter deposition induces the void formation to increase the efficiency of energy release in the form of heat. [ABSTRACT FROM AUTHOR]

Presents a study that examined yttrium compound superconducting thin films by using laser-deposition. Information on the structure and morphology of the films; Discussion on the surface morphology and electron channeling patterns of the thin films; Use of scanning electron microscope and atomic force microscope.

Mn1.56Co0.96Ni0.48O4 films with spinel structure were prepared on Al2O3 substrate by chemical solution deposition method. The microstructure of the films was studied by atomic force microscope and field-emission scanning electron microscope. The current-voltage characteristics showed Ohmic conductivity in the temperature range of 245–295 K. The conduction was described by a variable range hopping model for a parabolic density of states. The advantages of high characteristic temperature, as well as high transition temperature (201 K) between ferromagnetic and paramagnetic phases make the Mn1.56Co0.96Ni0.48O4 films very promising for infrared detection, especially for functional devices by integrating magnetic and electronic properties of the materials. [ABSTRACT FROM AUTHOR]