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The authors evaluated the electron detection performance of a diamond avalanche diode (DAD) detector. In the electrode region, the gain was uniformly about 103 with little noise. Meanwhile, an avalanche multiplication occurred locally. In the avalanche region, a total gain of 5×104 was obtained. In some regions where the electric field is regarded to be intensified, the avalanche multiplication gain was estimated to be approximately 100-300, and the signal-to-noise ratio (S/N) was nearly equal to 1. The DAD can be applied to an electron detector for a scanning electron microscope due to its high gain and small dark current. However, it is necessary to improve the S/N and homogenize the gain to use the DAD detector as an electron detector. [ABSTRACT FROM AUTHOR]

The authors present the first results obtained with their multibeam scanning electron microscope. For the first time, they were able to image 196 (array of 14×14) focused beams of a multielectron beam source on a specimen using single beam scanning electron microscope (SEM) optics. The system consists of an FEI Novanano 200 SEM optics column equipped with a multielectron beam source module. The source module consists of the multibeam source and an accelerator lens. In the multibeam source, the wide angle beam of a high brightness Schottky source is divided into 196 beamlets and focused by an aperture lens array. The accelerator lens is positioned on the image plane of the multibeam source to direct the beams toward the SEM column. The array of source images is further imaged by the SEM magnetic lenses, and the beam opening angle is defined at the variable aperture of the SEM. The system is designed to deliver 14×14 arrays of beamlets with a minimum probe size of 1 nm. In this article, the performance of the system is examined for a fixed magnification case. [ABSTRACT FROM AUTHOR]

Applicability of UV nanoimprint based on gas condensation to 45 nm line and space (L/S) patterning using a spin-coat UV curable resin was evaluated. Although high capillary pressure is generated in such fine L/S patterns when UV curable resin liquid comes in contact with the groove surface, the trapped air in those grooves is not completely compressed and results in the formation of bubble defects. Bubbles much larger than the pattern size were generated at the middle of the L/S patterns for a 108 nm thick, UV curable resin film, and incomplete filling may occur on a large area of the L/S patterns for a 19 nm thick film. Since nearly bubble-free L/S patterns have been fabricated for 48 nm thick, UV curable resin film, it might be possible to make bubble-free UV nanoimprint by prolonging the imprinting time. On the contrary, when UV nanoimprint was carried out in pentafluoropropane (PFP), no bubbles were created for all thicknesses of the UV curable resin films. Uniformity of residual layer looked quite good judging from the color uniformity of the area around the L/S patterns. It was found, from the residual layer measurement by a reflective thickness monitor, that bubble-free UV nanoimprint was carried out with a residual layer thickness of 15.2 nm. UV nanoimprinted samples were inspected with a scanning electron microscope and it was verified that UV nanoimprint using PFP is viable for the fabrication 45 nm L/S patterns. [ABSTRACT FROM AUTHOR]