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Abstract Twisted a pair of stacked two-dimensional materials exhibit many exotic electronic and photonic properties, leading to the emergence of flat-band superconductivity, moiré engineering and topological polaritons. These remarkable discoveries make twistronics the focus point of tremendous interest, but mostly limited to the concept of electrons, phonons or photons. Here, we present twist piezoelectricity as a fascinating paradigm to modulate polarization and electromechanical coupling by twisting precisely the stacked lithium niobate slabs due to the interlayer coupling effect. Particularly, the inversed and twisted bilayer lithium niobate is constructed to overcome the intrinsic mutual limitation of single crystals and giant effective electromechanical coupling coefficient $${k}_{t}^{2}$$ k t 2 is unveiled at magic angle of $$111^\circ$$ 11 1 ∘ , reaching 85.5%. Theoretical analysis based on mutual energy integrals shows well agreements with numerical and experimental results. Our work opens new venues to flexibly control multi-physics with magic angle, stimulating progress in wideband acoustic-electric, and acoustic-optic components, which has great potential in wireless communication, timing, sensing, and hybrid integrated photonics.

Abstract A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing 1.3-μm Si-based quantum dot (QD) lasers, extending the wavelength window to the widely used 1.55-μm telecommunication region remains difficult. In this study, we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si (100) (InPOS) heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si substrate. This ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth, namely lattice and domain mismatches. Using this approach, we achieved state-of-the-art performance of the electrically-pumped, continuous-wave (CW) 1.55-µm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm−2, and output power exceeding 155 mW per facet without facet coating in CW mode. CW lasing at 120 °C and pulsed lasing at over 130 °C were achieved. This generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

Abstract By using a direct non-Nehari manifold method from (Tang and Cheng in J. Differ. Equ. 261:2384–2402, 2016), we obtain an existence result of ground-state sign-changing homoclinic solutions that only changes sign once and ground-state homoclinic solutions for a class of discrete nonlinear p-Laplacian equations with logarithmic nonlinearity. Moreover, we prove that the sign-changing ground-state energy is larger than twice the ground-state energy.

As ferroelectric materials, lithium tantalate and lithium niobate share similar material characteristics, such as a high Pockels effect and nonlinear optical coefficients. When compared to lithium niobate, lithium tantalate offers a higher optical damage threshold, a broader transparent window, and lower birefringence, making it a promising candidate for high-performance electro-optical photonic integrated devices. In this study, we design and successfully fabricate micro-ring resonators on an acoustic-grade lithium-tantalate-on-insulator wafer, demonstrating their tunability and dynamic modulation capabilities. Experimental results indicate that the achieved thin-film lithium tantalate based micro-ring resonator exhibits an intrinsic Q-factor of 8.4 × 105, corresponding to a waveguide propagation loss of 0.47 dB/cm and a tuning efficiency of 1.94 pm/V. More importantly, as compared to those based on thin-film lithium niobate, a much weaker photorefractive effect and drift phenomenon around the 1550 nm wavelength under a direct-current drive are observed in the present fabricated thin-film lithium tantalate micro-rings with a silicon oxide over-cladding and a tuning electrode on top.

Alternative polyadenylation (APA) is a widespread mechanism of gene regulation that generates mRNA isoforms with alternative 3' untranslated regions (3' UTRs). Our previous study has revealed the global 3' UTR shortening of host mRNAs through APA upon viral infection. However, how the dynamic changes in the APA landscape occur upon viral infection remains largely unknown. Here we further found that, the reduced protein abundance of CPSF6, one of the core 3' processing factors, promotes the usage of proximal poly(A) sites (pPASs) of many immune related genes in macrophages and fibroblasts upon viral infection. Shortening of the 3' UTR of these transcripts may improve their mRNA stability and translation efficiency, leading to the promotion of type I IFN (IFN-I) signalling-based antiviral immune responses. In addition, dysregulated expression of CPSF6 is also observed in many immune related physiological and pathological conditions, especially in various infections and cancers. Thus, the global APA dynamics of immune genes regulated by CPSF6, can fine-tune the antiviral response as well as the responses to other cellular stresses to maintain the tissue homeostasis, which may represent a novel regulatory mechanism for antiviral immunity.

Summary: Cancer cells usually exhibit shortened 3′ untranslated regions (UTRs) due to alternative polyadenylation (APA) to promote cell proliferation and migration. Upregulated CPSF6 leads to a systematic prolongation of 3′ UTRs, but CPSF6 expression in tumors is typically higher than that in healthy tissues. This contradictory observation suggests that it is necessary to investigate the underlying mechanism by which CPSF6 regulates APA switching in cancer. Here, we find that CPSF6 can undergo liquid-liquid phase separation (LLPS), and elevated LLPS is associated with the preferential usage of the distal poly(A) sites. CLK2, a kinase upregulated in cancer cells, destructs CPSF6 LLPS by phosphorylating its arginine/serine-like domain. The reduction of CPSF6 LLPS can lead to a shortened 3′ UTR of cell-cycle-related genes and accelerate cell proliferation. These results suggest that CPSF6 LLPS, rather than its expression level, may be responsible for APA regulation in cancer cells.

Heterogeneous integration of $\beta $ -Ga2O3 with Si substrate is considered as an effective and low-cost technology for the thermal management of $\beta $ -Ga2O3 electrical devices. In this work, an isotype heterojunction of n-Ga2O3/n+-Si (Ga2O3/Si) was fabricated by surface activated bonding in which an amorphous layer was induced by ion beam bombardment. The current density of Ga2O3/Si Schottky barrier diodes (SBDs) are about two orders of magnitude lower than that of Ga2O3 bulk SBDs at 2.8 V due to the influence of amorphous layer. The results are consistent with the simulation results when $\beta $ -Ga2O3 Mole Fraction (MF $=\,\,\text{n}(\beta $ -Ga2O3)/[ $\text{n}(\beta $ -Ga2O3) + n(SiO2)]) and thickness of amorphous layers (Tox) are set at 0.83 and 3 nm, respectively. Furthermore, devices with different MF and ${\mathrm{ T}}_{\mathrm{ ox}}$ were simulated based on the nonlocal tunneling model by Sentaurus TCAD. The decrease of $\beta $ -Ga2O3 Mole Fraction and increase of amorphous layers thickness in the hetero-interface of Ga2O3/Si SBDs lead to a dramatic degeneration of current density and specific on-resistance in Ga2O3/Si SBDs. These results may provide some guidance for improvement of vertical heterogeneous integration $\beta $ -Ga2O3 devices performance.

Abstract Recent advancements in integrated soliton microcombs open the route to a wide range of chip-based communication, sensing, and metrology applications. The technology translation from laboratory demonstrations to real-world applications requires the fabrication process of photonics chips to be fully CMOS-compatible, such that the manufacturing can take advantage of the ongoing evolution of semiconductor technology at reduced cost and with high volume. Silicon nitride has become the leading CMOS platform for integrated soliton devices, however, it is an insulator and lacks intrinsic second-order nonlinearity for electro-optic modulation. Other materials have emerged such as AlN, LiNbO3, AlGaAs and GaP that exhibit simultaneous second- and third-order nonlinearities. Here, we show that silicon carbide (SiC) -- already commercially deployed in nearly ubiquitous electrical power devices such as RF electronics, MOSFET, and MEMS due to its wide bandgap properties, excellent mechanical properties, piezoelectricity and chemical inertia -- is a new competitive CMOS-compatible platform for nonlinear photonics. High-quality-factor microresonators (Q = 4 × 106) are fabricated on 4H-SiC-on-insulator thin films, where a single soliton microcomb is generated. In addition, we observe wide spectral translation of chaotic microcombs from near-infrared to visible due to the second-order nonlinearity of SiC. Our work highlights the prospects of SiC for future low-loss integrated nonlinear and quantum photonics that could harness electro-opto-mechanical interactions on a monolithic platform.

The semiconductor, β-Ga2O3 is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap (∼4.9 eV) and large Baliga's figure of merit. However, the thermal conductivity of β-Ga2O3 is much lower than that of other wide/ultra-wide bandgap semiconductors, such as SiC and GaN, which results in the deterioration of β-Ga2O3-based device performance and reliability due to self-heating. To overcome this problem, a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline β-Ga2O3 thin films on a highly thermally conductive SiC substrate. Characterization of the transferred β-Ga2O3 thin film indicated a uniform thickness to within ±2.01%, a smooth surface with a roughness of 0.2 nm, and good crystalline quality with an X-ray rocking curves (XRC) full width at half maximum of 80 arcsec. Transient thermoreflectance measurements were employed to investigate the thermal properties. The thermal performance of the fabricated β-Ga2O3/SiC heterostructure was effectively improved in comparison with that of the β-Ga2O3 bulk wafer, and the effective thermal boundary resistance could be further reduced to 7.5 m2K/GW by a post-annealing process. Schottky barrier diodes (SBDs) were fabricated on both a β-Ga2O3/SiC heterostructured material and a β-Ga2O3 bulk wafer. Infrared thermal imaging revealed the temperature increase of the SBDs on β-Ga2O3/SiC to be one quarter that on the β-Ga2O3 bulk wafer with the same applied power, which suggests that the combination of the β-Ga2O3 thin film and SiC substrate with high thermal conductivity promotes heat dissipation in β-Ga2O3-based devices.

Integrated photonic quantum circuits (IPQCs) have attracted increasing attention in recent years due to their widespread applications in quantum information science. While the most envisioned quantum technologies such as quantum communications, quantum computer and quantum simulations have placed a strict constraint on the scalability of chip-integrated quantum light sources. By introducing size-confined nanostructures or crystal imperfections, low-dimensional semiconductors have been broadly explored as chip-scale deterministic single-photon sources (SPSs). Thus far a variety of chip-integrated deterministic SPSs have been investigated across both monolithic and hybrid photonic platforms, including molecules, quantum dots, color centers and two-dimensional materials. With the rapid development of the chip-scale generation of single photons with deterministic quantum emitters, the field of IPQCs has raised new challenges and opportunities. In this paper, we highlight recent progress in the development of waveguide-coupled deterministic SPSs towards scalable IPQCs, and review the post-growth tuning techniques that are specifically developed to engineer the optical properties of these WG-coupled SPSs. Future prospects on stringent requirement for the quantum engineering toolbox in the burgeoning field of integrated photonics are also discussed.

Hybrid integration of silicon photonics with lithium niobate (LN) devices provides a promising route to enable an excellent modulation performance in silicon photonic integrated circuits. To realize this purpose, a substrate containing a Si film on an LNOI substrate, called Si on the LNOI structure, was analyzed and fabricated. The mode propagation properties in the Si-on-LNOI structure were simulated in detail and a vertical adiabatic coupler (VAC) between the Si waveguide and LN waveguide was simulated to help in the determination of the dimension of this structure. A 4-inch wafer-scale Si on an LNOI hybrid structure was fabricated through the ion-cut process. This structure has a single-crystalline quality, high thickness uniformity, smooth surface, and sharp bonding interface, which are practical for realizing low loss and high coupling efficiency.

Four new lactones, including hypomonacid A (1) and hypomonone A–C (4–6), as well as nine known polyketide analogues (2–3 and 7–13) were obtained from endophytic fungus Hypomontagnella sp. TX-09 derived from Santalum album. Their planar structures were extensively established by analysing HRESIMS and NMR spectroscopic data. Stereochemistry of new compounds was determined by X-ray diffraction analysis and modified Mosher’s method in combination with quantum-chemical ECD calculation. In addition, compounds 1 and 2 showed anti-inflammatory activity by inhibition of lipopolysaccharide (LPS)-induced NO production in RAW264.7 cells at 50 μmol/L without cytotoxicity. Among them, compound 1 inhibited the production of LPS-stimulated inflammation in mouse macrophage RAW264.7 cells by suppressing the expression of iNOS, TNF-α, IL-1β, and IL-6.

Abstract WSGP has demonstrated significant potential for various bioactive effects. However, limited research has explored their anti-ulcerative colitis (UC) effects and mechanism on the colonic system and gut microbial metabolites. We evaluated the ameliorative effects of WSGP on the UC mice model. Using H&E to assess histological injury of colon morphology, AB-PAS staining to detect mucin secretion from goblet cells and the mucous layer, IF to evaluate the expression of intercellular tight junction proteins, ELISA to measure inflammatory factors, WB analysis to measure protein expression of inflammatory signaling pathways, RT-qPCR to quantify gene transcription of inflammatory factors, and LC-MS to analyze metabolites in mouse cecum contents. WSGP supplementation increased food intake, body weight, and colon length while reducing disease activity and histological scores in colitis-afflicted mice. WSGP mitigated colonic tissue damage and restored intestinal barrier integrity by suppressing NF-κB/STAT3 signaling, thereby decreasing gene transcription, protein expression of proinflammatory factors, and nitric oxide production. Additionally, WSGP improved UC by altering the variety of intestinal microbial metabolites. This study demonstrates that WSGP supplementation attenuates UC mice by suppressing the NF-κB/STAT3 signaling pathway, enhancing mucosal barrier function, reducing pro-inflammatory cytokines, and modulating gut microbial metabolites.