1. Perspective on electrically active defects in β-Ga2O3 from deep-level transient spectroscopy and first-principles calculations.
- Author
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Langørgen, Amanda, Vines, Lasse, and Kalmann Frodason, Ymir
- Subjects
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SCHOTTKY barrier diodes , *ELECTRON traps , *SEMICONDUCTOR defects , *SPECTROMETRY , *FIELD-effect transistors , *METAL oxide semiconductor field-effect transistors , *DENSITY functional theory , *IMAGING systems in chemistry - Abstract
The ultra-wide bandgap of gallium oxide provides a rich plethora of electrically active defects. Understanding and controlling such defects is of crucial importance in mature device processing. Deep-level transient spectroscopy is one of the most sensitive techniques for measuring electrically active defects in semiconductors and, hence, a key technique for progress toward gallium oxide-based components, including Schottky barrier diodes and field-effect transistors. However, deep-level transient spectroscopy does not provide chemical or configurational information about the defect signature and must, therefore, be combined with other experimental techniques or theoretical modeling to gain a deeper understanding of the defect physics. Here, we discuss the current status regarding the identification of electrically active defects in beta-phase gallium oxide, as observed by deep-level transient spectroscopy and supported by first-principles defect calculations based on the density functional theory. We also discuss the coordinated use of the experiment and theory as a powerful approach for studying electrically active defects and highlight some of the interesting but challenging issues related to the characterization and control of defects in this fascinating material. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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