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This paper reports the optimization of voltage controlled resistive switching devices in terms of device and circuit level parameters in a memristor-based circuit in order to demonstrate profound non-linear characteristics for high performance NVM applications. The pinched hysteresis loop has been correlated to the different stages of formation and rupture of conductive filaments in memristors. A qualitative study of the VTEAM model has also been presented. The memristor circuit has been simulated for varying device and circuit level parameters and options to optimize the circuit to achieve high degree of power-aware non-linearity in the characteristics of the memristor have been demonstrated in this paper. The effect of window functions on the non-linear behavior of memristors has been presented towards the end of the paper.

Resistive random-access memory (RRAM) is a non-charge-based two-terminal non-volatile memory device. It is a promising candidate for usage in high radiation applications such as medical devices, aircraft, and space. The impact of radiation affects the resistance of RRAM. The resistance depends on the dimensions of the conductive filament. In this work, we have analyzed the impact of radiation on RRAM resistance with respect to the length and width of the conductive filament (CF). For our simulations, radiation is modeled as a double exponential current pulse (DECP). Different values of DECP are injected to mimic different radiation doses. Our simulations on the RRAM device demonstrate that high radiation dose affects the device performance in terms of low resistance state (LRS) and high resistance state (HRS). There is no distinction between LRS and HRS due to high radiation dose.

Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Si-nanowire transistors with n+electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors.