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Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors
- Source :
- Applied Physics Express (APEX); May 2021, Vol. 14 Issue: 5 p055002-055002, 1p
- Publication Year :
- 2021
-
Abstract
- Electron transport through a few-donor cluster flanked by acceptors is studied by first-principles and semi-empirical simulations in gated Si-nanowire transistors with n+electrostatically-doped source/drain. Local density-of-states spectra are probed by electrical characteristics at room temperature for clarifying modifications induced by acceptor-atoms on the energy states of the few-donor cluster. It is found that acceptor-atoms located between the few-donor cluster and the leads mainly shift the cluster potential, introducing a minor distortion to its energy spectrum. The results change only weakly as the acceptor-atoms are moved towards the Si nanowire surface, and systematically depend on the number of acceptors.
Details
- Language :
- English
- ISSN :
- 18820778 and 18820786
- Volume :
- 14
- Issue :
- 5
- Database :
- Supplemental Index
- Journal :
- Applied Physics Express (APEX)
- Publication Type :
- Periodical
- Accession number :
- ejs55911747
- Full Text :
- https://doi.org/10.35848/1882-0786/abf404