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Resume Les metastases hypothalamo-hypophysaires sont rares. Elles peuvent etre revelees soit de facon fortuite, soit pendant l’evaluation des symptomes lies a un dysfonctionnement hypothalamo-hypophysaire. Le diabete insipide demeure la presentation la plus commune. Dans ce travail, nous rapportons l’observation d’une patiente traitee pour un cancer du sein ayant presente une metastase hypothalamo-hypophysaire apres six ans d’evolution. Le diagnostic a ete confirme par une IRM.

This paper presents a 2-layer 3D stacked Back Side Illuminated vision chip performing high speed programmable parallel computing by exploiting in-focal-plane pixel readout circuits. The proposed circuit exhibits a 5500fps frame rate, 5 times higher than previous works without reducing ADC resolution. It allows heterogeneous parallel computations on up to 31×31 inter-pixels neighborhoods in a single chip.

International audience; Copper-copper direct bonding is a fundamental procedure in three-dimensional integration. It has been reported that voiding occurs in bonded copper layers if process temperatures exceed 300A degrees C; this leads to serious reliability issues. However, voiding nucleation and growth mechanisms have not been clearly established. Void characteristics were compared for different bonded structures specifically designed to identify the origin of void formation and its contribution. It seems that mechanical stress caused by different dilatation of silicon substrates and metal thin films leads to metallurgical creep. This stress-driven vacancy diffusion makes a major contribution to the reliability problem. This study provides better understanding of these physical phenomena and can be used as guideline for metal integration.

For the first time, a full 3D CMOS over CMOS CoolCube™ integration is demonstrated with a top level compatible with state of the art high performance FDSOI (Fully-Depleted Silicon On Insulator) process requirements such as High-k/metal gate or raised source and drain. Functional 3D inverters with either PMOS or NMOS on the top level are highlighted. Furthermore, Si layer transfer above a 28nm W Metal 1 level of an industrial short loop and the return in a front end environment is presented, confirming the industrial compatibility of CoolCube™ integration.

We report wafer level assembly of an advanced image sensor with control logic units and memories. The stack includes all back-end levels of a 0.13μm double damascene technology. The back-side imaging structure consists of 12 metal levels connected via direct hybrid copper-copper and oxide-oxide bonding. Thanks to a 3 step Chemical Mechanical Polishing (CMP) process applied at the bonding level and a proper wafer conditioning, the bonding was achieved at room temperature (RT) and under atmospheric pressure, with an x-y alignment precision below 400nm. The annealed structure has a pure copper metal connection with excellent mechanical and electrical properties. Beyond the next generation image sensors and hybrid integration, this demonstration appears as a good omen for a general three-dimensional (3D) IC integration via direct bonding.

From low density 3D integrations embedding Via Last Through Silicon Vias (TSV) to high densities hybrid bonding or 3D VSLI CoolCubeTM solutions, a multitude of new product opportunities is now envisioned. An overview of existing emerging 3D integrations is provided covering Image sensors, Photonics, MEMS, Wide I/O memories and Silicon Interposers for advanced logics. Associated key challenges and developments are highlighted focusing on 3D platform performance assessment.

session 5: 3D Systems and Packaging; International audience; 3D VLSI with a CoolCube™ integration allows vertically stacking several layers of devices with a unique connecting via density above a million/mm 2 . This results in increased density with no extra cost associated to transistor scaling, while benefiting from gains in power and performance thanks to wire-length reduction. CoolCube™ technology leads to high performance top transistors with Thermal Budgets (TB) compatible with bottom MOSFET integrity. Key enablers are the dopant activation by Solid Phase Epitaxy (SPE) or nanosecond laser anneal, low temperature epitaxy, low k spacers and direct bonding. New data on the maximal TB bottom MOSFET can withstand (with high temperatures but short durations) offer new opportunities for top MOSFET process optimization.

Promoted by the component miniaturization trend, three-dimensional integration appears as a promising option for implementation of the next generation of integrated circuits. In this context, copper is still an interesting material to be integrated to vertical interconnexion through direct metal-metal bonding processes. However, it was already reported that voiding phenomena occur in bonded copper layers for temperature beyond 300°C leading to serious reliability problems. This paper aims at explaining voiding mechanisms in the specific metal bonding configuration. Voiding characteristics are compared in different structures allows highlighting several thermal effects. It appears that the mechanical stress sustained by copper layers during post-bonding thermal processes is the main contribution in the voiding phenomenon. Creep mechanisms occurring in polycrystalline copper structure could be considered as the origin of this phenomenon. This study offers better understanding of reliability problems in structures involving encapsulated copper layers and can be used as guideline for metal bonding integration.

In recent years, a great interest has emerged in the development of new wafer-scale assembly processes. Beside the mechanical strength required, some applications need a vertical conductivity leading to implement metal thin films as bonding layers. For its interesting properties in terms of resistivity and reliability, copper has been already used in metal-metal direct bonding configuration. Initially developed on amorphous silicon dioxide layers, the polycristallinity character of metal films has a direct impact on the direct bonding mechanisms. In this paper, we will study the effect of grain size on direct bonding of polycrystalline copper thin films. More specifically at temperature below 150°C, a fine-grain copper microstructure demonstrates a fast sealing strengthening. For higher temperature application, a larger grain size enables limiting the copper-barrier interface damage and preserves a strong mechanical link between substrates.

Introduction Le diabete est un sujet toujours d’actualite avec l’evolution epidemique du diabete de type 2 dans le monde. De ce fait, il implique une actualisation reguliere de nos connaissances et de nos positions en medecine aeronautique, notamment vis-a-vis du traitement. De nouvelles therapeutiques basees sur les hormones incretines, paraissent prometteuses et meritent toute l’attention de l’expert aeronautique. A travers un cas clinique demonstratif, on va objectiver l’apport de ces nouveaux traitements ainsi que la decision d’aptitude dans ce nouveau contexte. Cas clinique Il s’agit d’un pilote de ligne âge de 51 ans, diabetique type 2 depuis 2001, non complique, initialement controle sous Metformine, ayant une aptitude par derogation avec suivi semestriel. En 2009 l’HbgA1c a 8,1 % continuait a progresser sous dose maximale de Metformine et ensuite sous association d’un inhibiteur de l’alfa glucosidase. L’indication de l’association d’un inhibiteur de la DPP4 etait posee par l’endocrinologue, ainsi le controle glycemique est obtenu (HbgA1c Discussion L’aptitude du pilote diabetique de type 2 implique outre un bon equilibre et l’absence de complications hautement dangereuses pour la securite des vols, un traitement compatible avec l’activite aeronautique. Les inhibiteurs de la DPP4 sont une nouvelle classe therapeutique permettant un gain d’HbgA1c de 0,6 % a 1,1 %, presentant par leur mecanisme d’action l’absence de risque d’hypoglycemie, condition majeure pour l’autorisation d’un antidiabetique en aeronautique sous couvert d’une derogation et d’un suivi rigoureux. Ces nouvelles therapeutiques permettent d’eviter une inaptitude definitive du pilote qui serait une deception double pour le navigant et pour la societe.