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We theoretically investigate the dwell time for electrons in an antiparallel double $\delta $ -magnetic-barrier nanostructure, which is constructed on the surface of the InAs/Al x In1- x As heterostructure by patterning two ferromagnetic (FM) stripes. It is shown that the dwell time is dependent on electron spins due to the spin–field interaction between spins and magnetic fields. It is also shown that both magnitude and sign of the spin polarization in the dwell time can be modulated by the structural width or magnetic-strength difference between two magnetic barriers, which may give rise to a controllable temporal spin splitter for spintronics device applications.

The dwell time of electrons in a parallel double δ-magnetic-barrier (MB) nanostructure constructed by patterning an asymmetric ferromagnetic stripe on both the top and bottom of an InAs/AlxIn1−xAs heterostructure is calculated. Because the electron spins interact with the structural magnetic fields, the dwell time depends on the electron spins. Moreover, both the magnitude and sign of the spin-polarized dwell time can be modified by changing the magnetic field, the applied voltage, and the separation between the two δ-MBs. The electron spins can thus be separated in the time dimension, and such a magnetic nanostructure could serve as a controllable temporal spin splitter for use in spintronics device applications.

We report a theoretical investigation on wave-vector filtering (WVF) effect in a magnetic nanostructure, which can be experimentally realized by depositing ferromagnetic (FM) stripes on the surface of GaAs/AlxGa1-xAs heterostructure. An appreciable WVF effect appears in this nanosystem. The WVF efficiency is associated with structural parameters of magnetic nanostructure. Therefore, such a device can be employed as a momentum filter for nanoelectronics device applications.

Based on a magnetically confined GaAs/Al x Ga1– x As microstructure modulated by spin-orbit coupling (SOC), we propose a controllable electron-spin filter for spintronics applications. This device operates due to both Zeeman interaction and Rashba or Dresselhaus SOC. Its spin polarization can be tuned by changing interfacial confining electric field or engineering strain.

We report a theoretical investigation on Goose-Hänchen (GH) effect for spin electrons across a magnetically confined GaAs/AlxGa1-xAs microstructure modulated by spin-orbit coupling [(SOC), including Rashba and Dresselhaus types]. An intrinsic symmetry in the device is broken by SOC, which gives rise to a considerable spin polarization effect in GH shifts of electrons. Both magnitude and direction of spin polarization can be manipulated by Rashba or Dresselhaus SOC, i.e., interfacial confining electric field or strain engineering. Based on such a semiconductor microstructure, a controllable spatial spin splitter can be proposed for spintronics applications.

This study aimed to investigate the effects of SPAR signaling pathway on the restoration of motor function in ischemic stroke (IS). Sprague-Dawley male rats were separated into the control and sham groups, as well as the group for middle cerebral artery occlusion (MCAO) model establishment. Successfully established rat ischemic models were randomly divided into model, SNKMCAO-del and pcDNA3.1-SNK groups. The evaluation of motor function among the rats in each group was assessed using a balance beam, a screen test and the Garcia scoring method. CatWalk gait analysis was employed to evaluate the effect of the SNK signaling pathway on rat motor function. Triphenyltetrazolium chloride (TTC) and TUNEL staining were techniques were utilized for cerebral infarction (CI) area as well for hippocampal neuron apoptosis. The quantitative real-time polymerase chain reaction (qRT-PCR) and western blotting methods were performed to detect mRNA and protein expressions of SNK and SPAR. When compared with the model group, the SNKMCAO-del group displayed decreased motor function score and CI area, while contrasting results were observed in the pcDNA3.1-SNK group. According to the results obtained from the CatWalk gait analysis, the SNKMCAO-del group showed a clear improvement compared to the model group whereas the pcDNA3.1-SNK group exhibited poorer results than the model group in the objective parameters of the study, such as movement, speed, running duration, print area, maximal contact area, maximal, mean intensity, and stride length. These findings suggested that SNK gene silencing promotes motor function by inhibiting the SNK-SPAR signaling pathway in rats with ischemic stroke.

The magnetically confined semiconductor heterostructure (MCSH) is often used as the momentum filter due to an essentially 2-D process for the electronic tunneling. Taking a typical MCSH into account, we theoretically investigate how to manipulate such momentum filters by the $\delta $ -doping technique. The momentum-filtering efficiency can be tuned because of the $\delta $ -doping dependence of the electron transmission. The involved MCSH can be employed as a controllable momentum filter.

We report on a theoretical study of giant magnetoresistance (GMR) effect in a δ -doped GaAs / Al x Ga 1 − x As heterostructure modulated by two stripes of ferromagnetic metal and a stripe of Schottky metal in parallel configuration. The δ -doping dependent transmission and conductance of the device are calculated. It is shown that a considerable giant magnetoresistance (GMR) effect exists in this structure. It is also shown that the magnetoresistance ratio ( MR ) can be switched by the δ -doping. The underlying physical mechanism of the results is analysed in light of δ -doping-dependent tunneling process in the device.

We report a theoretical study of spin-dependent transport in a magnetic nanostructure, which can be experimentally realized by depositing a ferromagnetic metal (FM) stripe and a Schottky metal (SM) stripe on the top and at the bottom of the semiconductor heterostructure. Theoretical analysis reveals that the intrinsic symmetry in a single FM-stripe magnetic system can be broken by the SM stripe placed at the bottom of the heterostructure, and thus a sizeable spin polarization effect appears. Numerical calculation shows that not only amplitude of the spin polarization but also its sign varies with the width and/or the position of the SM stripe.

We theoretically investigate Goos-Hänchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al

OBJECTIVE: To explore the effect of recombinant human erythropoietin (rhEPO) on expression of brain-derived neurotrophic factor (BDNF) in different brain regions of aging rats. METHODS: Forty male SD rats were randomized equally into negative control group, D-galactose group, EPO treatment group, and positive control group. Rat models of subacute aging were established by continuous subcutaneous injection of 5% D-galactose. Immunohistochemical staining was used to analyze the variation of BDNF expressions in different brain regions of the aging rats with different treatments. RESULTS: Significant brain region-specific differences in BDNF expression were found among the rats in different groups. Compared with those in the negative control group, the numbers of BDNF-positive cells in the hippocampal CA1 region, CA3 region, dentate gyrus (DG) and frontal cortex were all decreased obviously in D-galactose group (P < 0.05) but increased in both EPO group and the positive control group (P < 0.05) without significant differences between the latter two groups. In the rats in the same group, the number of BDNF-positive cells varied markedly in different brain regions (P < 0.05), and the expression level of BDNF was the highest in the frontal cortex followed by the hippocampal CA3 region and the dentate gyrus, and was the lowest in the hippocampal CA1 region. CONCLUSION: Treatment with rhEPO enhances the expression of BDNF in rat neural cells, suggesting that rhEPO may protect the nervous system from aging by regulating the BDNF pathway.

We theoretically explore the control of the wave-vector filtering (WVF) effect in a hybrid magnetic-electric-barrier nanostructure, which can be experimentally realized by depositing a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on top and bottom of a GaAs/Al $$_{\text {x}}$$ Ga $$_{1-x}$$ As heterostructure, respectively. It is shown that an obvious WVF effect appears in such a device. It is also shown that the degree of the WVF effect is related to the width and position of the SM stripe. In particular, the WVF effect can be tuned by the applied voltage to the SM stripe, and thus a manipulable momentum filter can be obtained for nanoelectronics applications.

We theoretically investigate Goos-Hanchen (GH) displacement by modelling the spin transport in an archetypal device structure-a magnetically confined GaAs/Al x Ga1-x As nanostructure modulated by spin-orbit coupling (SOC). Both Rashba and Dresselhaus SOCs are taken into account. The degree of spin-polarized GH displacement can be tuned by Rashba or Dresselhaus SOC, i.e. interfacial confining electric field or strain engineering. Based on such a semiconductor nanostructure, a controllable spatial spin splitter can be proposed for spintronics applications.