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This paper focuses on the understanding of the Random Telegraph Signal (RTS) in Single-Photon Avalanche Diodes (SPAD). We studied the RTS of two different SPAD layouts, designed and implemented in a 150-nm CMOS process, after proton irradiation. The two structures are characterized by different junction types: the first structure is constituted by a P+/Nwell junction, while the second is formed by a Pwell/Niso junction. RTS occurrence has been measured in about one thousand SPAD pixels and the differences addressed in two layouts are motivated and discussed. Hypotheses on the RTS origin are drawn by analyzing the RTS time constants and the RTS occurrence evolution as a function of the annealing temperature.

Nanostructured films of carbon and TiO2 nanoparticles have been produced by means of a simple two-step procedure based on flame synthesis and thermophoretic deposition. At first, a granular carbon film is produced on silicon substrates by the self-assembling of thermophoretically sampled carbon nanoparticles (CNPs) with diameters of the order of 15 nm. Then, the composite film is obtained by the subsequent thermophoretic deposition of smaller TiO2 nanoparticles (diameters of the order of 2.5 nm), which deposit on the surface and intercalate between the carbon grains by diffusion within the pores. A bipolar resistive switching behavior is observed in the composite film of CNP-TiO2. A pinched hysteresis loop is measured with SET and RESET between low resistance and high resistance states occurring for the electric field of 1.35 × 104 V/cm and 1.5 × 104 V/cm, respectively. CNP-TiO2 film produced by flame synthesis is initially in the low resistive state and it does not require an electroforming step. The resistance switching phenomenon is attributed to the formation/rupture of conductive filaments through space charge mechanism in the TiO2 nanoparticles, which facilitate/hinder the electrical conduction between carbon grains. Our findings demonstrate that films made of flame-formed CNP-TiO2 nanoparticles are promising candidates for resistive switching components.

Molecular electronics represents the ultimate step of the miniaturization process of the integrated circuits. Including molecules in manmade devices may introduce novel functionalities in nanodevices, such as the possibility to interact with biological environments with tremendous implications in several fields. With these motivations, we present a Bogoliubov-de Gennes description of the transport properties of a Normal-metal/molecule/Superconductor (N/m/S) junction formed by contacting an annular molecule (m) (e.g., a benzene molecule) with a normal (N) and a superconducting electrode (S). Differently from N/m/N junctions, the superconducting correlations in S play a crucial role in determining the transparency of the system. We demonstrate that the zero-bias differential conductance of the device is strongly suppressed in presence of charge accumulation on the molecule, while a resonant transmission with maximum conductance is observed when the charge stored on the molecule is negligible. We explain these findings observing that the space distribution of molecular quantum states is strongly affected by the Andreev mechanism, which represents the dominant scattering process at the m/S interface when the energy of the incident quasi-particle is below the superconducting energy gap. The relevance of these findings is briefly discussed.

We have fabricated and characterized single junctions, dc Superconducting Quantum Interference Devices (SQUIDs), and nanostrips made by Fe(Te, Se) superconductive thin films. SrTiO 3 bicrystal substrates with different misorientation angles have been used for the fabrication of Josephson junctions and SQUIDs. Nanostrips have been realized growing thin films on CaF 2 substrates. The interaction between fluxons and antifluxons has been taken into account for the evaluation of the pinning energy values.

Incipient carbon nanoparticles, CNP, formed by incomplete hydrocarbon combustion are composed of polycyclic aromatic hydrocarbons [1,2] and exhibit a quantum dot behavior [3], which make them ideal for a wide range of applications. Flame synthesis offers a continuous and low-cost process for the production of inorganic nanoparticles, such as TiO2, with fine control of cristallinity and phase. Likewise, carbon nanoparticles, CNPs, with tailored size and optical and electronic properties can be produced by optimizing the flame process. The assembly of nanoparticles into a uniform thin film with precise control over chemical and physical properties poses a significant challenge. Thermophoretic sampling relies on the thermophoretic forces driving the particles in the hot flame towards a cold substrate inserted in the flame and can be used to produce nanostructured, self-assembled films that can lead to novel applications. In this work, CNP and CNP/TiO2 nanoparticles have been produced in premixed ethylene-air flames and thin films have been realized by thermophoretic deposition on silicon substrates with gold interdigitated electrodes. Scanning mobility particle sizer furnished the particle size distribution and Raman and optical spectroscopy chemico-physical and structural information. The electrical characterization of the films was conducted by measuring the IV characteristics which shows a good linearity in the interval [-5 V, 5 V] whereas non-linear phenomena appear for wider voltage ranges and hysteresis phenomena are also observed in carbon/TiO2 films. Impedance spectroscopy was used to investigate the films with respect to their microstructure. This method is indeed particularly useful for nanostructured films with inter-grain and grain-edge impedances and capacities. Finally, noise spectral density at low and very low frequency was measured to investigate the electron transport. The main source of noise is of thermal type for the carbon material, whereas carbon/TiO2 film shows a Fliker type, 1/f noise, consistent to a larger amount of localized states responsible for trapping/detrapping processes of charge carriers and charge fluctuations during the conduction process. [1] Schulz, F., Commodo, M., Kaiser, K., De Falco, G., Minutolo, P., Meyer, G., D`Anna, A., Gross, L., "Insights into incipient soot formation by atomic force microscopy" Proc. Combust. Inst. 37: 885-892 (2019). [2] Commodo, M., Kaiser, K., De Falco, G., Minutolo, P., Schulz, F., D`Anna, A., Gross, L., "On the early stages of soot formation: molecular structure elucidation by high-resolution atomic force microscopy" Combust. Flame 205, pp. 154-164. [3] Liu, C, Singh, A.V., Saggese, C., Tang, Q., Chen, D., Wan, K., Vinciguerra, M., Commodo, M., De Falco, G., Minutolo, P., D'Anna, A., Wang H. , Flame-formed carbon nanoparticles exhibit quantum dot behaviors, 2019, DOI:10.1073/pnas.1900205116

This paper investigates the Random Telegraph Signal (RTS) in Single Photon Avalanche Diodes (SPADs). The test-chip features SPADs with different architectures implemented in 150 nm CMOS technology. The test-chip has been irradiated with 21 MeV proton beam. RTS occurrence probability has been investigated in two different architectures. RTS measurements allowed to investigate the defect responsible for RTS phenomenon.

The electronic properties of an infinite row of freestanding, aligned side-by-side, pentacene molecules are derived as a function of the intermolecular overlap integral and the chemical potential shift. We use a semiclassical approximation and a first principles tight binding method to obtain conductance and mobility of this one-dimensional crystal as a function of temperature and gate voltage. For two values of the intermolecular overlap, energy bands show a metallic behavior. For all the other values, a bandgap is present and evolves with the intermolecular overlap following a typical modulation. The magnitude of the scattering parameters estimated by the observed conductivity is coherent with the existing literature values. These findings could be relevant for the implementation of organic-based sensors.

The effects induced by radiation on an innovative photo-sensor consisting of Single-Photon Avalanche Diodes arrays, implemented in a 150-nm CMOS technology, are presented. Samples were irradiated with a proton beam at different doses, and the impact of radiation-induced damage on the performance of the devices in terms of Dark Count Rate has been estimated. Furthermore, possible methods to reduce the impact of radiation-induced damage are discussed.

In this paper, we report on the fabrication of n-type bottom-gate bottom-contact transistors, based on evaporated films of a perylene diimide derivative (PDI8-CN2), displaying electrical performances comparable to their top-contact counterparts. By combining very thin (20 nm) electrodes and a cleaning process with oxygen plasma, indeed, bottom-contact devices with maximum mobility approaching 0.2 cm2/V s and a contact resistance lower than 35 kΩ cm at low VDS values have been achieved. AFM analyses reveal that the improved electrical responses are accompanied by the optimized PDI8-CN2 film morphology which, very significantly, exhibits similar features on the gold and dielectric (i.e., SiO2) surfaces.

We investigated the radiation tolerance of a Single-Photon Avalanche Diode (SPAD) device manufactured using a 150-nm CMOS process. CMOS SPADs have been studied in view of utilization as photo-detectors in future space missions. An irradiation campaign has been carried out on several test chips containing SPAD arrays with different dimensions. Samples have been exposed to different displacement damage dose. The dark count rate (DCR) characterization as a function of the delivered proton fluence has showed a significant increase in mean DCR, providing the limits of operability of such devices in a space environment. Annealing and cooling have been investigated as possible damage mitigation approaches.

Single-photon avalanche diodes (SPADs) in the CMOS technology are very attractive solution for photon detection due to the excellent timing resolution achievable. Unfortunately, such devices suffer from large values of the dark count (DC) pedestals. In this paper, we analyzed a test chip containing SPADs with different layouts, implemented in the 150-nm CMOS technology. The behavior of such devices has been investigated after proton irradiation. It is observed that, after irradiation, the DC rate switches between two or more discrete levels, phenomenon known as random telegraph signal (RTS). The effect is related to the density and distribution of defects in the semiconductor lattice. RTS characteristics have been studied as the function of both temperature and bias voltage. Discussion of results and main hypotheses on defect types responsible for RTS are reported.

Single molecules can be coupled to metallic electrodes when the latter are in the superconducting state. In such emerging hybrid molecular devices, the possibility of the Josephson effect, that is, the dissipation-less transport of Cooper-paired electrons from one electrode to the other, arises. In this theoretical study, we demonstrate that a junction formed by two superconductors linked by an annular molecule, of which benzene (phenylene group) is a prototype, can sustain indeed a supercurrent and work as a “single molecule superconducting field-effect transistor (SMoSFET)”. In this device, Cooper-paired electrons are transmitted via the molecule in the presence of quantum interference. Through the presented model, we show that the resonant nontrivial modulation of the critical current with an external gate voltage may be strongly modified by choosing a paracoupled, a metacoupled, or an orthocoupled molecular ring. These features are directly related to the possibility of obtaining a SMoSFET controlled ...

Among the various families of Fe-based superconductors, iron chalcogenides, while presenting a transition temperature not particularly high, show great advantages for potential applications at high fields, albeit at liquid helium temperature. In fact, the critical temperature can be increased by stress up to 21 K in thin films, moreover stress can push the critical field up to more than 50 T, and the irreversibility field up to of 45 T. Also critical current densities higher than 1 MA/cm 2 can be reached in self field and at 4.2 K, with a very weak dependence on the magnetic field. Interestingly, the J C anisotropy depends on the mode of growth and substrate used. These high values of J C can be achieved without appreciable anisotropy. In this work, we present an overview of Fe(Se 0.5 Te 0.5 ) thin film deposition by pulsed laser ablation, and a study of their superconducting properties. STM and TEM techniques have been used to characterise structural and morphological properties and, thus, pinning centres. On different substrates the films grow with different types of defects, hence giving totally different J C anisotropy. Our preliminary measurements on a Josephson junction show that in Fe(Se,Te), the J C at the grain boundary is not severely depressed, which makes this material even more interesting from the practical point of view.

The Josephson effect in a molecular structure mimicking a benzene molecule (C6H6) placed between two nanometric superconducting electrodes is theoretically studied. In the tight bindingmodel, the Bogoliubov-de Gennes equations are solved to derive the Andreev reflection coefficient and hence the dc Josephson current. Two effects are pointed out: the quantum interference effect on the supercurrent due to the presence of two branches in the molecule and a on-resonance off -resonance state operation in the presence of an applied gate voltage. The results provide an insight on the molecular electronics devices in the case of superconducting nano-electrodes.

We present, for the first time, Low Frequency Noise measurements in Vertical Organic Transistors. Investigated devices are p-type Metal-Base Organic Transistors employing Pentacene and Copper Phthalocyanine as active layers for the Emitter and Collector regions, respectively. The power spectral densities measured at the Base and Collector terminals follow a 1/fγ law, with γ≈1, suggesting that noise is generated, in both cases, by a continuous distribution of traps. Cross-correlation measurements show that Base current noise and Collector current noise are uncorrelated meaning that the physical origin of the noise measured at the Base and Collector terminals is different.

Vertical organic transistors are a promising candidate to overcome the scaling limits of conventional horizontal organic field-effect devices. In this paper, based on the results of direct current (dc) and low-frequency noise (LFN) measurements, we propose a picture for the carrier transport in metal-base organic transistors in which transmission across the base is due to the combined action of both hot-carriers (HCs) and high-conduction paths (pores) in the metal base. Investigated devices employ pentacene and copper phthalocyanine as active layers for the emitter and collector regions, and a bilayer consisting of Au/MoO3 as injecting electrode. The dc analysis highlights that the charge transport in the investigated devices is due to drift diffusion of the emitter-injected carriers in the highest occupied molecular orbital (HOMO) band and is dominated by HC injection, although conduction via pores increases and becomes not negligible at high base–emitter fields. The LFN analysis highlights the presence of two dominant and uncorrelated 1/f current noise sources, one located between base and emitter, due to the fluctuations of the not-transmitted HC current, and a second source located between collector and emitter, due to the fluctuations of the transmitted HC current and/or to the fluctuations of the current through the pores in the metallic base.

In this paper, nanoscale organic two-terminal devices, based on evaporated films of a perylene diimide derivative (PDI8-CN2) and with channel lengths ranging from 1 μm down to 50 nm, have been fabricated by using Focused Ion Beam technique. Devices have been characterized in terms of I–V curves at several temperatures and perylene diimide nanochannels displayed a measurable electrical conduction even at temperatures lower than 50 K. The recorded experimental data stressed the electrical response according to the channel size. Investigation of nanoscale devices allowed us to study the nature of the charge injection and to estimate the energy barrier and the factors influencing it.

In this paper, the metal-semiconductor contacts in n-type bottom-contact bottom-gate Organic Field-Effect Transistors (OFET), based on evaporated films of a perylene diimide derivative (PDI8-CN2), have been investigated by Scanning Kelvin Probe Microscopy (SKPM). OFET were characterized for different thicknesses of the PDI8-CN2 film and in the light of the gold electrode functionalization with an aromatic thiol self-assembled monolayer. SKPM experiments reveal that aromatic thiol functionalization produces a 30% reduction in the contact resistance (Rc), while lowering the organic film thickness, the contact resistance (Rc) phenomenon tends to be magnified. The experimental observation that the voltage drops occurring close the drain electrode are even larger than those taking place at the source contact suggests that it is not possible, for these devices, to explain the overall Rc effects by simply referring to the presence of a reverse-biased Schottky junction limiting the electron injection process into the active channel.

We formulate a quantum waveguide theory of the Josephson effect in multiband superconductors, with special emphasis on iron-based materials. By generalizing the boundary conditions of the scattering problem, we first determine the Andreev levels spectrum and then derive an explicit expression for the Josephson current which generalizes the formula of the single band case. In deriving the results, we provide a second quantization field theory allowing to evaluate the current-phase relation and the Josephson current fluctuations in multiband systems. We present results for two different order parameter symmetries,namely $s_\pm$ and $s_{++}$, which are relevant in multiband systems. The obtained results show that the $s_\pm$ symmetry can support $\pi$ states which are absent in the $s_{++}$ case. We also argue a certain fragility of the Josephson current against phase fluctuations in the $s_{++}$ case. The temperature dependence of the Josephson critical current is also analyzed and we find, for both the order parameter symmetries, remarkable violations of the Ambegaokar-Baratoff relation. The results are relevant in view of possible experiments aimed at investigating the order parameter symmetry of multiband superconductors using mesoscopic Josephson junctions., Comment: 10 pages, 5 figures

We have fabricated and analyzed bicrystal grain boundary superconducting quantum interference devices made by Fe(Se,Te) superconductors, grown on [001] tilt SrTiO3 bicrystal substrates. We have realized several devices using the so-called hole-type geometry, with different loop inductances and different junction widths. Modulations of the voltage under an external applied magnetic field have been observed for three samples. Voltage amplitudes of the order of few microvolt have been measured. The maximum magnetic flux-to-voltage transfer parameter value that we have observed has been . The experimental data are analyzed in the famework of existing theoretical models.