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Low frequency noise measurements in p-type Metal-Base Vertical Organic Transistors
- Publication Year :
- 2017
- Publisher :
- Institute of Electrical and Electronics Engineers Inc., 2017.
-
Abstract
- We present, for the first time, Low Frequency Noise measurements in Vertical Organic Transistors. Investigated devices are p-type Metal-Base Organic Transistors employing Pentacene and Copper Phthalocyanine as active layers for the Emitter and Collector regions, respectively. The power spectral densities measured at the Base and Collector terminals follow a 1/fγ law, with γ≈1, suggesting that noise is generated, in both cases, by a continuous distribution of traps. Cross-correlation measurements show that Base current noise and Collector current noise are uncorrelated meaning that the physical origin of the noise measured at the Base and Collector terminals is different.
- Subjects :
- 010302 applied physics
Materials science
Low Frequency Noise
Metal-Base
Vertical Organic Transistors
Computer Networks and Communications
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
business.industry
Infrasound
Transistor
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Power (physics)
law.invention
Pentacene
chemistry.chemical_compound
Noise generator
chemistry
law
0103 physical sciences
Physics::Accelerator Physics
Optoelectronics
Flicker noise
0210 nano-technology
business
Noise (radio)
Common emitter
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....beff66cdd717c2874595337aee3b8ca8