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27 results on '"A. D. Utrilla"'

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1. Strain-balanced type-II superlattices for efficient multi-junction solar cells

2. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

4. Frailty as a predictor of clinical problems and events that require elderly patients with heart failure to use health resources

5. Nitrogen mapping from ADF imaging analysis in quaternary dilute nitride superlattices

6. Compositional inhomogeneities in type-I and type-II superlattices for GaAsSbN-based solar cells: Effect of thermal annealing

7. Size and shape tunability of self-assembled InAs/GaAs nanostructures through the capping rate

8. Modelling of the Sb and N distribution in type II GaAsSb/GaAsN superlattices for solar cell applications

9. Influence of Sb/N contents during the capping process on the morphology of InAs/GaAs quantum dots

10. Evaluation of different capping strategies in the InAs/GaAs QD system: Composition, size and QD density features

11. Role of Sb on the vertical-alignment of type-II strain-coupled InAs/GaAsSb multi quantum dots structures

12. Effect of capping rate on InAs/GaAs quantum dot solar cells

13. GaAsN/GaAsSb superlattices as 1 eV layers for efficient multi-junction solar cells

14. Impact of alloyed capping layers on the performance of InAs quantum dot solar cells

15. Type-II GaAsSb/GaAsN superlattice solar cells

16. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

17. Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

18. Open circuit voltage recovery in GaAsSbN-based solar cells: Role of deep N-related radiative states

21. General route for the decomposition of InAs quantum dots during the capping process

22. Thin GaAsSb capping layers for improved performance of InAs/GaAs quantum dot solar cells

23. Strain mapping accuracy improvement using super-resolution techniques

24. Stacked GaAs(Sb)(N)-capped InAs/GaAs quantum dots for enhanced solar cell efficiency

25. (S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications

26. Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process.

27. General route for the decomposition of InAs quantum dots during the capping process.

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